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Microchip Technology Inc 2N1724 POWER BJT
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DigiKey	2N1724	Bulk			100	1 - 10 - 100 $327.1815 1000 $327.1815 10000 $327.1815	Buy Now
Avnet Americas	2N1724	Bulk		36 Weeks	100	1 $352.35 10 $352.35 100 $327.18 1000 $314.6 10000 $314.6	Buy Now
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Newark	2N1724	Bulk			100	1 - 10 - 100 $327.18 1000 $314.6 10000 $314.6	Buy Now
Future Electronics	2N1724				100	1 - 10 - 100 $349.56 1000 $349.56 10000 $349.56	Buy Now

Microchip Technology Inc	2N1724				1	1 $352.35 10 $352.35 100 $352.35 1000 $352.35 10000 $352.35	Buy Now
Onlinecomponents.com	2N1724					1 - 10 - 100 $319 1000 $319 10000 $319	Buy Now
NAC	2N1724				1	1 $359.54 10 $359.54 100 $331.16 1000 $306.93 10000 $306.93	Buy Now
Master Electronics	2N1724					1 - 10 - 100 $319 1000 $319 10000 $319	Buy Now
Microchip Technology Inc 2N1724A TRANS NPN 120V 5A TO61
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DigiKey	2N1724A	Tray			100	1 - 10 - 100 $327.1815 1000 $327.1815 10000 $327.1815	Buy Now
Avnet Americas	2N1724A	Bulk		36 Weeks	100	1 $352.35 10 $352.35 100 $327.18 1000 $314.6 10000 $314.6	Buy Now
Mouser Electronics	2N1724A					1 - 10 - 100 $352.35 1000 $352.35 10000 $352.35	Get Quote
Newark	2N1724A	Bulk			100	1 - 10 - 100 $327.18 1000 $314.6 10000 $314.6	Buy Now
Microchip Technology Inc	2N1724A				1	1 $352.35 10 $352.35 100 $352.35 1000 $352.35 10000 $352.35	Buy Now

NAC	2N1724A	Tray			1	1 $359.54 10 $359.54 100 $331.16 1000 $306.93 10000 $306.93	Buy Now
Master Electronics	2N1724A					1 - 10 - 100 $319 1000 $319 10000 $319	Buy Now
Microchip Technology Inc JANTX2N1724 NPN TRANSISTOR
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DigiKey	JANTX2N1724	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc	JANTX2N1724					1 $713.44 10 $713.44 100 $713.44 1000 $713.44 10000 $713.44	Buy Now
Microchip Technology Inc Jantx2N1724 Bipolar Transistors - BJT Power BJT
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Mouser Electronics	Jantx2N1724					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc JAN2N1724 Power BJT _ TO-61, Projected EOL: 2049-02-05
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Microchip Technology Inc	JAN2N1724					1 $2457.48 10 $2457.48 100 $2457.48 1000 $2457.48 10000 $2457.48	Buy Now
NAC	JAN2N1724	Tray			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N1724 Datasheets (78)

Part	Manufacturer	Description	Datasheet Type	PDF
2N1724	Microsemi	NPN Transistor - Pol=NPN / Pkg=TO61 / Vceo=80 / Ic=5 / Hfe=20-90 / fT(Hz)=10M / Pwr(W)=100	Original	PDF
2N1724	New England Semiconductor	BJT, NPN, High Power Switching Transistor, IC 5A - Pol=NPN / Pkg=TO61 / Vceo=80 / Ic=5 / Hfe=20-90 / fT(Hz)=10M / Pwr(W)=100	Original	PDF
2N1724	API Electronics	NPN Transistors	Scan	PDF
2N1724	API Electronics	Short form transistor data	Short Form	PDF
2N1724	API Electronics	Short form transistor data	Short Form	PDF
2N1724	Diode Transistor	NPN Transistor Selection Guide - TO-111 and TO-61 Packages	Scan	PDF
2N1724	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N1724	General Diode	Transistor Selection Guide	Scan	PDF
2N1724	General Semiconductor	Low Frequency Transistors	Scan	PDF
2N1724	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N1724	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1724	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N1724	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N1724	Unknown	Vintage Transistor Datasheets	Scan	PDF

2N1724	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N1724	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N1724	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N1724	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N1724	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N1724	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N1724 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N1724 Abstract: No abstract text available Text: 2N1724+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0	Original	PDF	2N1724 Freq10M
Untitled Abstract: No abstract text available Text: tuff 'j ioaucti, Una. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TYPES 2N1722A, 2N1724A N-P-N TRIPIE-DIFFUSED MESA SILICON TRANSISTORS • • • • 50 Wafts at 100°C Case Temperature	Original	PDF	2N1722A, 2N1724A 2N1722A
Untitled Abstract: No abstract text available Text: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/ 262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage	Original	PDF	MIL-PRF-19500/ 2N1722 2N1724 1000C 1750C 1000C
Untitled Abstract: No abstract text available Text: 2N1724+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0	Original	PDF	2N1724 Freq10M
2n1724 Abstract: 2N1722 1000C 2N172 to-53 Text: TECHNICAL DATA 2N1722 JAN, JTX 2N1724 JAN, JTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/262 NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1722 / 2N1724 Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage	Original	PDF	2N1722 2N1724 MIL-PRF-19500/262 2N1724 1000C 1750C 1000C 2N1722 2N172 to-53
2N1208 - 2N1212 Abstract: No abstract text available Text: <£s.m.i-Cond.u.ctoi ^Pr 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N1618 2N1208 - 2N1212 2N1724 2N1616/A - 2N1617/A 2N2101 POWER TRANSISTORS Sat Test Voltages Conditions PT TYPE @ NO. 25aC	Original	PDF	2N1618 2N1208 2N1212 2N1724 2N1616/A 2N1617/A 2N2101 2N1208 2N1209 2N1208 - 2N1212
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
2N3622 Abstract: 2N3445 2N3446 2N3448 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron Text: high-rei power transistors 88 SILICON NPN TRANSISTORS 1 0 Amp BREAKDOWN VOLTAGES VeB VEB VeE TYPE NUMBER CASE SIZE 2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N3620 2N3621 2N3622 2N3624 2N3625 2N3626 2N3628 2N3629	Original	PDF	2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3622 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron
2N1724 Abstract: 2N1722 1000C JANTX2N1724 to-53 Text: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage	Original	PDF	MIL-PRF-19500/262 2N1722 2N1724 1000C 1750C 1000C 2N1724 2N1722 JANTX2N1724 to-53
Untitled Abstract: No abstract text available Text: 2N1724 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0	Original	PDF	2N1724 Freq10M
Untitled Abstract: No abstract text available Text: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672	OCR Scan	PDF	2N1724, 2N5671, 2N5672 250nsec 700nsec 200nsec 100mA, TWX910-950-1942
IC 4025 Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple ment VCE (SAT) @ IC/lB	OCR Scan	PDF	0-300V 2N1724 1OQ012O 2N1724A 1OS018O 2N1725 2N2813/ 2N3489 2N3490 2N3491 IC 4025 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
4116 2n Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
2N1724 Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489 Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE \|n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15	OCR Scan	PDF	0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489

transistor 2N43 Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^FE@ VcE<sat) IC/ ^ C E pr D WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2	OCR Scan	PDF	2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 transistor 2N43
TX2N1724 Abstract: 2N1722 2N1724 Text: MIL-S-19500/262F AMENDMENT 4 21 February 1985 SUTTRSEDTfre AMENDMENT 3 1 N o v e m b e r 198 4 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , T R A N S I S T O R , N PN, S I L I C O N , H I G H POWER TYPES 2N1722, TX2N1722, 2N1724, AND TX 2N 17 24	OCR Scan	PDF	MIL-S-19500/262F 2N1722, TX2N1722, 2N1724, TX2N1724 MIL-S-19 0/262F, MIL-STD-750. TX2N1724 2N1722 2N1724
2N2632 Abstract: No abstract text available Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60	OCR Scan	PDF	2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632
2H2904 Abstract: 2NI483-86 Text: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879	OCR Scan	PDF	2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714- 2N1722 2N1724 2N2015 2H2904
2N1724A Abstract: 2N1722A Text: TYPES 2N1722A, 2N1724A N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS • 50 Watts at 100°C Case Temperature • Maxim um rcs of 0.3 Ohm at 2 Amperes lc • Maxim um V fjE of 2 V o lts at 5 Amperes lc « in w • Minim um f f of 10 Megahertz S z 5 » CD H	OCR Scan	PDF	2N1722A, 2N1724A 2N1724A 2N1722A
393A Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868 Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440	OCR Scan	PDF	2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868
t460 transistor Abstract: 2N1724 60V transistor npn 2a switching applications i442 T460 2IM1724 Text: IMPIM S ilic o n P o w e r T ra n sisto r 2IM1724 Application The SSDI 2N1724 is a NPN double epitaxial silicon power transistor designed for high reliability opera tion in military, space and indus trial applications. Fast switching speeds, low saturation voltages	OCR Scan	PDF	2IM1724 2N1724 200mA t460 transistor 60V transistor npn 2a switching applications i442 T460 2IM1724
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 [ Case 805 Type No. 2N1724 2N1724A PNP Comple ment VCE SAT @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (v VBE @ IC/VCE (V @ A/V) * N E S I(max) = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz NPN TO-61	OCR Scan	PDF	2N1724 2N1724A 2N6689 N6690 2N6691 2N6692 2N6693
Untitled Abstract: No abstract text available Text: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89	OCR Scan	PDF	O-254 NPN-18
Untitled Abstract: No abstract text available Text: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725	OCR Scan	PDF	2N1208 2N1209 2N1212 2N1616 2N1617 2N1618 2N1724 2N1724A 2N1725 2N2632

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2N1724 Datasheets (78)

2N1724 Datasheets Context Search

2N1724

Untitled

Untitled

Untitled

2n1724

2N1208 - 2N1212

Diode 400V 5A

2N3622

2N1724

Untitled

Untitled

IC 4025

4116 2n

2N1724

transistor 2N43

TX2N1724

2N2632

2H2904

2N1724A

393A

t460 transistor

Untitled

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