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    Microchip Technology Inc 2N1016B

    TRANS NPN 100V 7.5A TO82
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    2N1016B Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1016B Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN TRANSISTOR Original PDF
    2N1016B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1016B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1016B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1016B Unknown Vintage Transistor Datasheets Scan PDF
    2N1016B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1016B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1016B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1016B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1016B Unknown GE Transistor Specifications Scan PDF
    2N1016B Pirgo Electronics Power Transistors in TO-82 Scan PDF
    2N1016B Semitronics Silicon Power Transistors Scan PDF
    2N1016B Silicon Transistor JAN Qualified Power Transistors Scan PDF
    2N1016B Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N1016B Silicon Transistor Industrial Grade NPN Power Transistors Scan PDF
    2N1016B Solid Power POWER TRANSISTORS - TO-82 Scan PDF
    2N1016B Westinghouse Silicon Power Transistors 20 Amps, 150 Watts Scan PDF
    2N1016B Westinghouse 7.5 Amps, 150 Watt Silicon Power Transistor Scan PDF
    2N1016B+JAN Defense Energy Support Center NPN Silicon High Power Transistors Scan PDF
    2N1016B/M Unknown Discontinued Transistor Data Book 1975 Scan PDF

    2N1016B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


    Original     		PDF 2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 high-reliabilit32

    2n1016

    Abstract: 2n1016c
    Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


    Original     		PDF 2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 2n1016c

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2n1016

    Abstract: No abstract text available
    Text: , Line. <~>E.ml-L-ona.u.cko'i u-^i 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN POWER TRANSISTROS 2N1015/2N1016 Inches . Mm. iymbo A 08 d 0D 0D, <t>0, e e, H Min. Max. .560 .060 .170 12.70


    Original     		PDF 2N1015/2N1016 2n1016

    2N2227

    Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32


    Original     		PDF 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229

    delco

    Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans


    Original     		PDF 2N1012 2N1013 2N1014 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F delco 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


    OCR Scan     		PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    transistor kc 2026

    Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
    Text: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,


    OCR Scan     		PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B -I-150 2N1016C 2N1016D MIL-S-19500/102A transistor kc 2026 2N10160 2n1019

    2N1016B

    Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
    Text: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B 2N1016C 2N1016D MIL-S-19500, transistor kc 2026 102A MC 3041 2N1016 kc 2026

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    MIL-S-19500

    Abstract: U2T305 U2T10 2N5157 JANTX U2T205 2N1016D UPT311 U2T713 2N1050A JAN UNITRODE TRANSISTORS
    Text: SUMMARY LIST OF API/SPC Q.P.L. DIRECTORY TYPES QUALIFICATION COMPLETE 2N5660-JAN,JAN-TX,JAN-TXV 2N5661-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 MIL-S-19500/454 2N5662-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 2N5653-JAN,JAN-TX,JAN-TXV MIL-S-19500/454 2N1016B-JAN 2N1016C-JAN


    OCR Scan     		PDF 2N5660-JAN 2N5661-JAN 2N5662-JAN 2N5653-JAN 2N1016B-JAN 2N1016C-JAN 2N1016D-JAN 2N1483-JAN 2N1484-JAN 2N1485-JAN MIL-S-19500 U2T305 U2T10 2N5157 JANTX U2T205 2N1016D UPT311 U2T713 2N1050A JAN UNITRODE TRANSISTORS

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B

    2N1016

    Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
    Text: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,


    OCR Scan     		PDF DDGD43T 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 152-TO-82 2N1016 2N2772 2N2771 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


    OCR Scan     		PDF 2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046

    2N1016

    Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
    Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8


    OCR Scan     		PDF STA9760 STAB760 STA9761 STA3265 STA3285 STA3266 STA8860 2N1016 2N1015C 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Text: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


    OCR Scan     		PDF 2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753
    Text: 8365700 SOLID POWER CORP SOLID 95C 0 0 1 2 0 POWER CORP TS D ö3hS70G -p-3 3 ^0/ 000D12D POW ER TRANSISTORS PT TYPE NO. W atts TO-82 hFE M A X IM U M R A TIN G S @ Ic 25°C B V cbo B V ceo B V ebo V V , V A @ M IN M AX Ic A V CE V Sat Voltages VCE V be V V


    OCR Scan     		PDF T-33-0/ 03hS70G 000D1ED 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


    OCR Scan     		PDF 2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan     		PDF 25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931