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    2N1048 Search Results

    2N1048 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1048 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1048 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1048 Unknown Vintage Transistor Datasheets Scan PDF
    2N1048 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1048 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1048 Unknown GE Transistor Specifications Scan PDF
    2N1048 Unknown GE Transistor Specifications Scan PDF
    2N1048 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1048 Pirgo Electronics Power Transistors in TO-57 / TO-61 Scan PDF
    2N1048 Solid Power POWER TRANSISTORS - TO-57, TO-61 Scan PDF
    2N1048A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1048A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1048A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1048A Unknown Vintage Transistor Datasheets Scan PDF
    2N1048A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1048A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1048A Unknown GE Transistor Specifications Scan PDF
    2N1048A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1048A Pirgo Electronics Power Transistors in TO-57 / TO-61 Scan PDF
    2N1048A Silicon Transistor JAN Qualified Power Transistors Scan PDF

    2N1048 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2N1048C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N1048C Freq12M

    Untitled

    Abstract: No abstract text available
    Text: 2N1048 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N1048

    Untitled

    Abstract: No abstract text available
    Text: 2N1048A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N1048A Freq75k

    Untitled

    Abstract: No abstract text available
    Text: 2N1048A+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N1048A Freq75k

    Untitled

    Abstract: No abstract text available
    Text: 2N1048B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)750m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N1048B Freq125k

    Untitled

    Abstract: No abstract text available
    Text: , One. ^E.mL-Conducto'i LPi TELEPHONE: 973 376-2922 (212)227-6005 FAX; (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTORS PT I 1 TYPE NO. MAXIMUM RATINGS ff%TO^ V hri ^M BvB^T V A •""W"^fc &tf Ic MfN MAX A Vet V Sat


    Original     		PDF 2N1047 2N1048 2N1049 2N1050 2N1768 2N1769

    2N1212

    Abstract: 2N2101 2N1208 to-53 transistor 2n1208 2N1209 2N1616 2N1616A 2N1617 2N1617A
    Text: POWER TRANSISTORS Sat Test Voltages Conditions « ! » a r a i * 7 7 * hTM msm mrm l i r a y v V A A A ma FT TYPE NO. 2N1047 TO-57 , MAXIMUM RATINGS <feCm* • i-i’n o i A w & ? V •• y " V 80 6 40 80 .5 h* . mW 12 36 .5 10 7.5 6.0 .5 .250 2N1048 40 120


    OCR Scan     		PDF 2N1208 2N1209 2N1212 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1724 2N2101 to-53 transistor 2n1208

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


    OCR Scan     		PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    2N1048A

    Abstract: 2N1049A 2N1049 2N1047A 2N1050A MARKING LI ORT
    Text: M IL-S-19500/176B 13 December 1971 OTTTÌP D O P nXm11U /l OU £'U1\UUL' MIL-S-19500/176A 10 November 1965 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A This specification is mandatory for use by all D epart­


    OCR Scan     		PDF MIL-S-19500/176B MIL-S-19500/176A 2N1047A, 2N1048A, 2N1049A 2N1050A 2N1047A 2N1048A 2N1049 2N1050A MARKING LI ORT

    2N1050A

    Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
    Text: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A


    OCR Scan     		PDF 000D12S MIL-S-l9500/176B MIL-S-19500/176A 2N1047A, 2N1048A, 2N1049A 2N1050A 2N1047A 2N1048A 2N1050A T 3036 2n1048 2N1049

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS A Sat Test Voltages Conditions * 7 7 * hTM mm mrm l i r a y y V A A ma 12 36 .5 10 7.5 6.0 .5 .250 FT TYPI NO. 2N1047 TO-57 , MAXIMUM RATINGS «A « i-i’n o i A wm ? V •• y " V 80 6 40 80 .5 h« . «! » mW 2N1048 40 120 120 6 .5 12


    OCR Scan     		PDF 2N1047 2N1048 2N1049 2N1050 -2N1047A -2N1048A 2N1724 2N2101 TWX-510-224-6582

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


    OCR Scan     		PDF 2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N1050A

    Abstract: transistor 2n1208 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049B
    Text: A P I ELECTRONI CS INC blE D • GDMaS'iS □□□02'iM bfl? ■ AfIC POWER TRANSISTORS TYPE NO. TO-57 PT @ 25°C Watts MAXIMUM RATINGS B V c b o B V ceo B V ebo Ic V V V A T-33-l Sat Voltages hFE MIN MAX Ic A V CE V VCE V be v V Test Conditions IB Ic I ebo


    OCR Scan     		PDF 00QG2S4 2N1047 2N1048 2N1049 2N1050 2N1047A 2N1048A f2N1049A 2N1050A 2N1047B transistor 2n1208 2N1048B 2N1049B

    Untitled

    Abstract: No abstract text available
    Text: «gl —I * i ; l e c t r i ì r u c s ini. POWER TRANSISTORS PT TYPE NO SECTION 3 TO-57 @ 25°C Watts M AXIM UM RATINGS B V c b o B V c eo B V ebo le V V A V hFE Sat Voltages Cà> le A MIN MAX VCE V V ce be V V V Test Conditions Ib le A A I eb o ma 2N1047


    OCR Scan     		PDF 2N1047 2N1048 2N1049 2N1209 2N1212 2N1616 2N1617 2N1618 2N2101

    2SC114

    Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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