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    BC182L Price and Stock

    onsemi BC182L

    TRANS NPN 50V 0.1A TO92-3
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    onsemi BC182LB

    TRANS NPN 50V 0.1A TO92-3
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    onsemi BC182L_D75Z

    TRANS NPN 50V 0.1A TO92-3
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    onsemi BC182L_D74Z

    TRANS NPN 50V 0.1A TO92-3
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    onsemi BC182L_J35Z

    TRANS NPN 50V 0.1A TO92-3
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    BC182L Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC182L Fairchild Semiconductor SILICON NPN SMALL SIGNAL TRANSISTOR Original PDF
    BC182L Multicomp General Purpose Transistors Original PDF
    BC182L Crimson Semiconductor Transistor Selection Guide Scan PDF
    BC182L Micro Electronics Silicon Planar Epitaxial Transistors Scan PDF
    BC182L Micro Electronics Low Level and General Purpose Amplifiers Scan PDF
    BC182L Micro Electronics Semiconductor Devices Scan PDF
    BC182L Micro Electronics Semiconductor Device Data Book Scan PDF
    BC182L Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BC182L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BC182L Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BC182L Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BC182L Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BC182L Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BC182L Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BC182L Unknown Cross Reference Datasheet Scan PDF
    BC182L National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
    BC182L National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    BC182L National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BC182L Semico Audio Frequency Small Signal Transistors Scan PDF
    BC182L Texas Instruments Discrete Devices 1978 Scan PDF

    BC182L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC182L

    Abstract: IC DATE Code Identification bc 458 c 182l
    Text: BC182L BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BC182L 100mA. BC182L IC DATE Code Identification bc 458 c 182l

    transistor 1094

    Abstract: NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LA SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


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    PDF BC182LA 182LA Pr10/1094 transistor 1094 NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450

    BC182LB

    Abstract: No abstract text available
    Text: BC182LB BC182LB NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF BC182LB 100mA. BC182LB

    bc182l

    Abstract: ic 10 209 transistor bc182l BC182l NPN transistor datasheet ic 901
    Text: BC182L General Purpose Transistors Description: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70


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    PDF BC182L bc182l ic 10 209 transistor bc182l BC182l NPN transistor datasheet ic 901

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10.


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    PDF BC182L 100mA. 27TYP

    transistor bc182l

    Abstract: bc182l transistor Common Base configuration all ic data bc182* transistor BC182LA BC182LB common base amplifier circuit designing 100MHZ
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC182L, BC182LA, BC182LB TO-92 Plastic Package E CB General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF QSC/L-000019 BC182L, BC182LA, BC182LB C-120 BC182L BRev240203D transistor bc182l transistor Common Base configuration all ic data bc182* transistor BC182LA BC182LB common base amplifier circuit designing 100MHZ

    bc182l

    Abstract: transistor bc182l
    Text: BC182L BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BC182L 100mA. bc182l transistor bc182l

    Untitled

    Abstract: No abstract text available
    Text: BC182LC Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF BC182LC Freq150M

    transistor BC 182l

    Abstract: bc182l bc182* transistor transistor bc182l
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182L SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature


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    PDF BC182L transistor BC 182l bc182l bc182* transistor transistor bc182l

    BC182LB

    Abstract: No abstract text available
    Text: BC182LB BC182LB NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF BC182LB 100mA. BC182LB

    bc182l

    Abstract: transistor bc182l
    Text: BC182L General Purpose Transistors General Description: • General Purpose NPN Silicon Planar Epitaxial Amplifiers Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20


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    PDF BC182L bc182l transistor bc182l

    182LB

    Abstract: BC182LB TRANSISTOR BC 413 transistor 1094
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LB SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original
    PDF BC182LB 182LB 182LB BC182LB TRANSISTOR BC 413 transistor 1094

    Untitled

    Abstract: No abstract text available
    Text: BC182LB Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF BC182LB Freq150M q150M

    Untitled

    Abstract: No abstract text available
    Text: BC182LA Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF BC182LA Freq150M q150M

    2SC3361-5

    Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68


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    PDF 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A MPS-A09 KT3102A 2N4966 JE9214A 2SC3361-5 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN

    NPN Transistor BC548B

    Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
    Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA


    OCR Scan
    PDF BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


    OCR Scan
    PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    BC182L complementary

    Abstract: BC212L BC182 BC212 8C132 BC182L 1C10
    Text: BC182 BC182L BC212 BC212L //SJSJW/SStMfS/S&SSSS/SSSSr/fS/f'SS.'SSSSS/.'YS* D E S C R IP T IO N The B C 182, BC1S2L NPN & BC212, BC212L (PNP) ÍH are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as


    OCR Scan
    PDF BC182, BC212, BC212L BC182 BC182L BC212 BC212L BC182. BC182L complementary 8C132 1C10

    bc182c

    Abstract: t092 BC182LC BC237B bc182l T0-92 bc186 BC212
    Text: SEMELAB LTD 37E » Ö1331Ö7 0GGG032 4 IS nL B T ~ -^ 7 -o Reliability Option TVpe No. Package Polarity v CEO •c cont hF E @ V c e /Ic »T Pd BC182B BC182C BC182L BC182LA BC182LB NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 50 50 50 50 50 0.2 0.2 0.2 0.2


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    PDF 0GGG032 BC182B BC182C BC182L BC182LA BC182LB BC182LC BC183 BC183A BC183B t092 BC237B bc182l T0-92 bc186 BC212

    C184L

    Abstract: BC184LC
    Text: AL LE GR O MICROSYSTEMS INC =53 8 5 1 4 0 1 9 SPRA GU E. D • G50433Ö 0 0 0 3 5 T 3 T ■ ALGR S E M I C O N D S / ICS 93D 03593 J PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C V) (V) (V)


    OCR Scan
    PDF G50433Ö D33D30 C184L BC184LC

    BC148

    Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150


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    PDF BC107 BC108 BC109 BC110 BC113 O-106 BC114 BC132 BC148 BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


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    PDF 2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan
    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    F B0347

    Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
    Text: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *


    OCR Scan
    PDF DD3SS11 F B0347 b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6