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Ohmite Mfg Co RW2S0CBR300JE RES 0.3 OHM 5% 2W J LEAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RW2S0CBR300JE	Bulk	80		1	1 $6.31 10 $3.817 100 $2.4525 1000 $2.025 10000 $2.025	Buy Now
Mouser Electronics	RW2S0CBR300JE		40			1 $5.45 10 $3.86 100 $2.47 1000 $2.02 10000 $2.02	Buy Now
Newark	RW2S0CBR300JE	Bulk			100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	RW2S0CBR300JE	Bulk		20 Weeks	100	1 - 10 - 100 $3.11 1000 $2.95 10000 $2.81	Get Quote
Bristol Electronics	RW2S0CBR300JE		77			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Richardson RFPD	RW2S0CBR300JE				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	RW2S0CBR300JE		192			1 - 10 $3.12 100 $2.53 1000 $2.22 10000 $2.07	Buy Now
VersaLogic Corp VL-CBR-3001 CBL LVDS 30PIN 20"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VL-CBR-3001	Bulk	5		1	1 $70 10 $70 100 $70 1000 $70 10000 $70	Buy Now
VersaLogic Corp VL-CBR-3002 CBL LVDS 30PIN TO 20PIN 20"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VL-CBR-3002	Bulk	4		1	1 $51 10 $51 100 $51 1000 $51 10000 $51	Buy Now
VersaLogic Corp VL-CBR-3003 CBL LVDS 30PIN TO 20PIN 20"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VL-CBR-3003	Bulk	3		1	1 $59 10 $59 100 $59 1000 $59 10000 $59	Buy Now
VersaLogic Corp VL-CBR-3004 0.5M 30-PIN 2MM IDC TO RIBBON CA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VL-CBR-3004	Bag	2		1	1 $20 10 $20 100 $20 1000 $20 10000 $20	Buy Now

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CBR30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CBR30B006F Abstract: No abstract text available Text: PCB Mounted Receptacles CBR30 - longer tails - .100" Grid Features: • • • • • • • • • .100" 2.54 mm grid - 2 rows 6 to 80 contacts - bottom entry bifurcated contact design ( N/S orientation ) selectively plated gold contact Ni underplate suitable for no-clean operation	Original	PDF	CBR30 CPP32 E10001) CTP11 E10002) A10030) A10031 V04-0926 A0637629 CBR30B006F
Untitled Abstract: No abstract text available Text: CBR30-080 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)60# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12	Original	PDF	CBR30-080 Current30 Voltage800 Current10u
UM9C Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651 Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma	OCR Scan	PDF	DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651
Untitled Abstract: No abstract text available Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50	OCR Scan	PDF	BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BDX54E
Untitled Abstract: No abstract text available Text: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï \| T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED	OCR Scan	PDF	1N823Ã 1N825A 1N827A 1N829A 1N821A CBR25Ser/es CBR30 0000SE3 O-105 O-106
Untitled Abstract: No abstract text available Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419	OCR Scan	PDF	2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700
Untitled Abstract: No abstract text available Text: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an	OCR Scan	PDF	7077W-, CBR10Series, CBR25Ser/es CBR12 CBR30 0000SE3 O-105 O-106
2N22A Abstract: 2N4271 2N3947 2N3326 2N3666 Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419	OCR Scan	PDF	2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666
2N3563 Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088 Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE \| n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15	OCR Scan	PDF	D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133
2N3633 Abstract: No abstract text available Text: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 \| NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min	OCR Scan	PDF	2N2242 2N2368 2N2369 2N2369A 2N2410 2N2475 2N2481 2N2501 2N2651 2N2710 2N3633
CR508 Abstract: No abstract text available Text: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010	OCR Scan	PDF	CR3005 CR5005 CR6005 CR3010 CR5010 CR6010 CR3020 CR5020 CR6020 CR3040 CR508
Untitled Abstract: No abstract text available Text: 1989963 CENTRÀL SEMICONDUCTOR ' ' SKftWl nflTTLB 61C "00249 7 ^ 3 5 ^ 7 3 □ 0 D D 5 4 ‘ì S J " • 'ï 3 if, 'ïf< j&-Lfv-r s*—.je MJ12010 eeratpcil g@Biie@iigl5jet©r c e r p . Central s e m i c o n d u c t o r eopp. JP NPN SILICON TRANSISTOR	OCR Scan	PDF	0DD54` MJ12010 MJ12010 CBR10 CBR25Ser/es CBR12 CBR30 0000SE3 O-105 O-106
Untitled Abstract: No abstract text available Text: i A 12 Amperes General Purpose Silicon Power Rectifier kl VRRM<volts) ODGDlSb T iT \| • CENTRAL S E M I C O N D U C T O R ^ »e \| OQDOISL T \| CR12I005 CR12I010 CR12I020 CR12I040 CR12I- 50 100 200 400 060 CR12I080 CR12I100 CR12I120 600 800 1000 1200 .060 (1.52) MIN DIA	OCR Scan	PDF	CR12I005 CR12I010 CR12I020 CR12I040 CR12I060 CR12I080 CR12I100 CR12I120 CR12I CBR10
C5Z15B Abstract: 5 watt zener diode Text: CENTRAL SEMICONDUCTOR , £j¡ \ j>f\| nfl«nb3 ODDOat-S 3 Y ^ l/'tS ^ 3 Watt Zener Diode • 5% Tolerance • Case C CENTRAL TYPE NO. C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B C3Z10B C3Z11B C3Z12B C3Z13B C3Z14B C3Z15B C3Z16B C3Z17B C3Z18B C3Z19B C3Z20B C3Z22B	OCR Scan	PDF	C3Z47B C3Z50B C3Z51B C3Z52B C3Z56B C3Z62B C3Z68B C3Z75B C3Z82B C3Z91B C5Z15B 5 watt zener diode

D40C2 Abstract: No abstract text available Text: CENTRAL SEMICONDUCTOR fc,l D \| nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C	OCR Scan	PDF	2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2
2N2646 TO-92 Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948 Text: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth	OCR Scan	PDF	CBR30 0000S23 O-105 O-106 2N2646 TO-92 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
2N2800 Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A Text: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5	OCR Scan	PDF	2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A CBR30 0000s23 2N2904 2N2906 2N2906A
N3020 Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F \| n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220	OCR Scan	PDF	2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053
2N4121 Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138 Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE \| . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30	OCR Scan	PDF	DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5139 2N4917 2N3639 2n5138 016 2N4062 2N5383 2N5857 2N5138
MPS-A42 Abstract: MPS-A43 K MPS a42 Text: 19 8 9 9 6 3 /CENTRAL’S E M ICONDUCTOR" ó 1C 00232 • T ~ ^ &mSïfiâ bï g@esilg@6n^ stei? @g*p. de\| MPS-A42 central g@BiiIe®si§lye£@r €®rp. C e n tra i s s m le o n c fu e to r C orp. ~ / 7 0000535 d MPS-A43 NPN JP SILICON HIGH VOLTAGE TRANSISTORS	OCR Scan	PDF	MPS-A42 MPS-A43 CBR30 0000S23 O-105 O-106 K MPS a42
CQ920 Abstract: CQ92A CQ92B CQ92D CQ92F CQ92M cbr3-p Text: n a ^ t a _CENTRAL S EM IC ON DUCTOR dooostt ^ T ~ T - ¿ s '- // CQ92F CQ92A CQ92B CQ92D CQ92M gGEmiËSQÊBgSP&û ^ @@^3* s@6û^@@nG9QBefior e @ p p . €@Bifrcal SeniBeO BItiU C tO r C S’p . central semiconductor Corp. TRI AC 0.8 AMPS 50 THRU 600 VOLTS	OCR Scan	PDF	D0005cÃ CQ92F CQ92A CQ92B CQ92D CQ92M cq92f CBR30 0000S23 O-105 CQ920 CQ92M cbr3-p
CS55AZ Abstract: CS55BZ CS55DZ CS55FZ CS55MZ KSH 123 scr 209 Text: central semiconductor ]>EjnflTib3 DDDD3D7 CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ e &aGb:eJ Stop.U£Ë^5BS3 Suj@? ©Qirpo £t>^3U gdBMBieeoBcgasefQE3 e@ i?g . GSBtâral Ê©raS(g@Bi2fiysÊ@p C e ^ p . J P SCR Central semiconductor Corp. 0.8 AMPS 50 THRU 600 VOLTS	OCR Scan	PDF	CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ T0-92-18R CS55MZ KSH 123 scr 209
t1p117 Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548 Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C	OCR Scan	PDF	2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 D40K3 D41K3 D40K4 D41K4 t1p117 T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 2N6548
IN4702 Abstract: 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4698 1N4699 1N4700 Text: 1 9 8 9 9 6 3 CEN TRAL : : V ~T Ï g ngi?ga9 g KHS@©BBe3e5gfi@E? @ ® r ; p o '~ f -U '0 '7 61C 0 0 2 7 7 SEM ICONDUCTOR DE \| l'iôT' it .B 00 00 57 7 \| 1NA678 THRU 1N 47 H €©&a€ffS9B LOW LEVEL SILICON ZENER DIODE C@iifral Ê @ ü îis@ B îe isg st csr	OCR Scan	PDF	G000577 1N4678 CBR30 0000S23 O-105 O-106 IN4702 1N4679 1N4680 1N4681 1N4682 1N4683 1N4698 1N4699 1N4700

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CBR30 Search Results

CBR30 Price and Stock

Ohmite Mfg Co RW2S0CBR300JE

VersaLogic Corp VL-CBR-3001

VersaLogic Corp VL-CBR-3002

VersaLogic Corp VL-CBR-3003

VersaLogic Corp VL-CBR-3004

CBR30 Datasheets Context Search

CBR30B006F

Untitled

UM9C

Untitled

Untitled

Untitled

Untitled

2N22A

2N3563

2N3633

CR508

Untitled

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C5Z15B

D40C2

2N2646 TO-92

2N2800

N3020

2N4121

MPS-A42

CQ920

CS55AZ

t1p117

IN4702