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    t1p117

    Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
    Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C


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    2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 D40K3 D41K3 D40K4 D41K4 t1p117 T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 2N6548 PDF

    t1p117

    Abstract: TIPT17
    Text: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS Copyright <0 1997, Power Innovations Lim ited, UK • Designed lor Complementary Use with TIP110, TIP111 and TIP112 • 50 W at 2S“C Case Temperature • 4 A Continuous Collector Current • Minimum hpE ° 500 at 4 V, 2 A


    OCR Scan
    TIP115, TIP116, TIP117 TIP110, TIP111 TIP112 O-220 TtP115 T1P117 TIPT17 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)


    OCR Scan
    2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 To-126 C1000SE3 O-105 O-106 PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan
    bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G PDF