t1p117
Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C
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OCR Scan
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2N6548
2N6549
D40K1
D41K1
D40K2
D41K2
D40K3
D41K3
D40K4
D41K4
t1p117
T1P110
T1P111
T1P112
MJE3310
t1p115
MJE3311
MJE3300
2N6548
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PDF
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T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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OCR Scan
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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T1P110
Abstract: transistor c 1971 transistor 1971 TJP112 T1P111 C 1971 transistor
Text: nptio, HP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright *81997, Povnar Innovations Limited, UK_ DECEMBER 1971 • REVISED MARCH 1907 • Designed tor Complementary Use with TIP115, TIP116 and TIP117 • 50 W at 25”C Case Temperature
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OCR Scan
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HP111,
TIP112
TIP115,
TIP116
TIP117
T0-220
T1P110
TIP111
TJP112
TIP110
transistor c 1971
transistor 1971
T1P111
C 1971 transistor
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PDF
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T1P112
Abstract: T1P111
Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51
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OCR Scan
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TIP110,
TIP111,
TIP112
TIP115,
TIP116,
TIP117
23633T4
T1P112
T1P111
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PDF
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Untitled
Abstract: No abstract text available
Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)
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OCR Scan
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2N6548
2N6549
D40K1
D41K1
D40K2
D41K2
To-126
C1000SE3
O-105
O-106
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PDF
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