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    2N3020 Price and Stock

    RAF Electronic Hardware M2992-N-3.0-2.0-2.0

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    Central Semiconductor Corp 2N3020

    Bipolar Transistor NPN High Current 80V 1A 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N3020)
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    Central Semiconductor Corp 2N3020 PBFREE

    Bipolar Transistors - BJT NPN Gen Pur SS
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    New Jersey Semiconductor Products, Inc. 2N3020

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    Philips Semiconductors 2N3020

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    2N3020 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3020 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
    2N3020 Continental Device India NPN SILICON PLANAR EPITAXIAL TRANSISTORS Original PDF
    2N3020 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Original PDF
    2N3020 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3020 Boca Semiconductor GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan PDF
    2N3020 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3020 Central Semiconductor BJT, NPN, High Current Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan PDF
    2N3020 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3020 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3020 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N3020 Fairchild Semiconductor NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan PDF
    2N3020 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3020 General Diode Transistor Selection Guide Scan PDF
    2N3020 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N3020 Great American Electronics Silicon NPN transistor Scan PDF
    2N3020 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan PDF
    2N3020 Micro Electronics Semiconductor Devices Scan PDF
    2N3020 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3020 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3020 Mullard Quick Reference Guide 1977/78 Scan PDF

    2N3020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power transistor 2n3020

    Abstract: 2N3019 and applications
    Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C


    Original     		PDF 2N3019 2N3020 2N3019, 150mA, 150mA 500mA 20MHz power transistor 2n3020 2N3019 and applications

    2N3020

    Abstract: No abstract text available
    Text: 2N3020 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3020 O205AD) 1-Aug-02 2N3020

    2n3019

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications


    Original     		PDF 2N3019 2N3020 C-120 2N3019 20Rev160102D

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage


    Original     		PDF 2N3019 2N3020 C-120 040406E

    2N3019

    Abstract: 2N301 2N3019-2N3020 2N3020 2N302
    Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation


    Original     		PDF 2N3019 2N3020 2N3019 2N3020 2N301 2N3019-2N3020 2N302

    2N3019

    Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201
    Text: NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.


    Original     		PDF 2N3019 2N3020 2N3019 2N3020 2n3019 equivalent 2N3019 and applications 2n3019 transistor 2n30201

    Untitled

    Abstract: No abstract text available
    Text: 2N3020 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3020 O205AD) 19-Jun-02

    2N3019 CDIL

    Abstract: 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed For Use in General Purpose Amplifier And High Speed Switching Applications.


    Original     		PDF 2N3019 2N3020 C-120 2N3439-40Rev180701 2N3019 CDIL 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019

    2N3020

    Abstract: 2N3019
    Text: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF 2N3019 2N3020 7110flSb 711002b 00M2fci42 2N3020

    Untitled

    Abstract: No abstract text available
    Text: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC


    OCR Scan     		PDF 2N3020 2N3020

    2N5225

    Abstract: 2N4033 2N5042
    Text: Medium Power Amplifiers and Switches H,re COMPLE­ C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150


    OCR Scan     		PDF 2N3794 2N3945 2N4029 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4234 2N5225 2N5042

    Transistor D 798

    Abstract: No abstract text available
    Text: ÀSII 2N3020 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 8O V Pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C Ts t g -65 0C to +2OO 0C


    OCR Scan     		PDF 2N3020 2N3020 Transistor D 798

    2N3053

    Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
    Text: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous


    OCR Scan     		PDF 2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* O-205AD) 2N3053 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola

    2n3019a

    Abstract: 2n3019
    Text: 2N3019 2N3020 Z A PHILIPS INTERNATIONAL 5bE D m 711GöSb DG42b4G 31e] HPHIN 7 = 3 5 "-/< ? SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended fo r use as amplifiers and in switching circuits. Q UICK REFERENCE D A T A Collector-base voltage open em itter


    OCR Scan     		PDF 2N3019 2N3020 DG42b4G 2n3019a

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax­ ial NPN transistors in Jedec TO-39 metal case, de­ signed for high-current, high-frequency amplifier


    OCR Scan     		PDF 2N3019 2N3020 2N3019 2N3020

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

    pnp for 2n3019

    Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
    Text: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.


    OCR Scan     		PDF 2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 150mA VCE-10V 500mA pnp for 2n3019 2N4033 2N5020 transistor 2N4033 2N4031 BOX69477

    2N3019 MOTOROLA

    Abstract: 2N3019 2N3700 2N3020 motorola 2N3020 test 2N3700 2N3700 MOTOROLA 2N301 motorola 2N3019 2n3701
    Text: Boca Semiconductor Corp. M A X IM U M R ATIN GS Symbol 2N3019 2N3020 2N3700 Unit C o lle ctor-E m itter V oltage VCEO 80 80 Vdc Collector-Base V oltage VCBO 140 140 Vdc Em itter-Base V oltage vebo 7.0 7.0 Vdc Rating C o lle ctor C u rrent — C o ntinuous


    OCR Scan     		PDF 2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3700 MOTOROLA 2N301 motorola 2N3019 2n3701

    2N3020

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS 2N3020 Silicon NPN transistor 2N3020 is intended for high frequency amplifier applications. Package Type: TO-39 CÛ LU > ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL Rating Collector-Emitter Voltage REB=3.0 KQ VcER Collector-Emitter Voltage


    OCR Scan     		PDF 2N3020 2N3020 30mAdc, 100jaAdc, 90Vdc, 150mAdc, 10Vdc

    2n3700

    Abstract: 2n3019 2N3019 MOTOROLA motorola 2N3019
    Text: 2N3019* 2N3020 MAXIM UM RATINGS Sym bol 2N3019 2N3020 2N 3700 U n it C o lle ctor-E m itter V o ltage v CEO 80 80 Vdc C ollector-Base V o ltage V cB O 140 140 Vdc Em itter-Base V o ltage Vebo 7.0 7.0 Vdc 1.0 1.0 Ade Rating C o lle ctor C u rrent — C o ntinuous


    OCR Scan     		PDF 2N3019 2N3020 2N3019* 2N3020 O-205AD) 2N3700* O-206AA) 2N3700 2N3019 MOTOROLA motorola 2N3019

    2N3019-2N3020

    Abstract: No abstract text available
    Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS D E S C R IP T IO N The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi­ gned for high-current, high-frequency amplifier ap­


    OCR Scan     		PDF 2N3019 2N3020 2N3020 2N3019-2N3020

    2N3019A

    Abstract: 2N3501A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A

    pnp for 2n3019

    Abstract: No abstract text available
    Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.


    OCR Scan     		PDF 2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 200OC 150mA VCE-10V pnp for 2n3019

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222