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    2N3109 Price and Stock

    New Jersey Semiconductor Products Inc 2N3109

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    Quest Components 2N3109 7,846
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    Motorola Semiconductor 2N3109

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    Quest Components 2N3109 40
    • 1 $3.096
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    • 100 $2.064
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    2N3109 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3109 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=100-300 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N3109 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=100-300 / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N3109 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3109 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3109 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3109 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N3109 Fairchild Semiconductor NPN small signal general purpose amplifier & satureted switch. - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=100-300 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N3109 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N3109 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=100-300 / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N3109 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3109 Micro Electronics Semiconductor Devices Scan PDF
    2N3109 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3109 Unknown Vintage Transistor Datasheets Scan PDF
    2N3109 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3109 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3109 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3109 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3109 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3109 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3109 Unknown Transistor Replacements Scan PDF

    2N3109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3109

    Abstract: No abstract text available
    Text: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3109 O205AD) 1-Aug-02 2N3109

    Untitled

    Abstract: No abstract text available
    Text: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3109 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3109 O205AD) 17-Jul-02

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


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    PDF BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


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    PDF 2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N3107

    Abstract: N3107 2n3110 TS37 2N311
    Text: 30 E D • 7=^537 0031157 ê SGS-THOMSON ^□OML| ï[R] g [MDOi T '3 S -1 < Ì 2N3107/2N3108 2N3109/2N3110 S G S-TH 0 MS 0 N GENERAL PURPOSE AMPLIFIERS AND SWITCHES D ESCRIPTIO N The 2N3107, 2N3108, 2N3109 and 2N3110 are silicon planar epitaxial NPN transistors in Jedec


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    PDF 2N3107/2N3108 2N3109/2N3110 2N3107, 2N3108, 2N3109 2N3110 T-35-19 2N3107 N3107 TS37 2N311

    pic 08m

    Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174


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    PDF 2N3053SM 2N3054 2N3055 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E pic 08m 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411

    2N3406

    Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7
    Text: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169


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    PDF 2N3036 10/10m 2N3053 2N3053L 2N305A 2N3055 20rain 2N3055/5 2N3055/6 2N3055/7 2N3406 2N3055 plastic pic 08m 2N3055-6 2N3444 2N3680 2N3172 2N3055-7

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N310B

    Abstract: 2N2270
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


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    PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N310B 2N2270

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N4033

    Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
    Text: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107


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    PDF 2N3073 2N3081 2N3107 2N4032 2N3108 2N4030 2N3109 2N4033 2N3110 2N3115 2N4033 2N3702 2N3794 2N4235

    Untitled

    Abstract: No abstract text available
    Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8


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    PDF 2N3008 2N3012 2N3014 2N3019 2N3020 80min 30min 5/30m 4/30m 2N3036

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    2N4033

    Abstract: 2N2905 2N3702
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120


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    PDF 2N2838 2N2868 2N2897 2N2904 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N4033 2N3702

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118

    2N295

    Abstract: 2N2891 2N223
    Text: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221


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    PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 2N2237 2N2243 2N295 2N2891 2N223

    2n3019 equivalent

    Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31

    2N2907A FAIRCHILD SEMICONDUCTOR

    Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
    Text: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE


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    PDF 34bcit174 2N2710/FTS02710 2N2710 FTS02710 O-236AA/AB 2N3107) 2N3108) 2N3109) 140kHz 2N2907A FAIRCHILD SEMICONDUCTOR 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020

    2N4033

    Abstract: 2N3704 2N3702
    Text: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S TYPE NO. PO LA­ R IT Y CASE Ic Pd H FE fT VcE sat VcEO Ic ^CE max (mA) (V) (V) Ic (A) min C 0b max VcER * (mW) (A) (V) min max CO M PLE­ M EN TARY TYPE (MHz) (MHz) 2N3299 N '10-39 800 0.5 30


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    PDF 2N3704 2N3706 2N3702 2N3703 2N3108 2N3020 2N3107 2N3109 2N2102 2N4033