SRAM 64KX8 Search Results

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

8Kx8 eprom

Abstract: 32Kx8 EPROM128KX8 8KX8
Contextual Info: VERSAPAC CMOS MEMORY FAMILY SRAM / EPROM/ /EEPROM / FLASH SRAM / EEPROM / FLASH FLASH with Plastic PLCCs EPROM MIXED TEC H N O LO G IES GENERAL DESCRIPTION: The VERSAPAC series of memory modules consist of SRAM, ERO M , EEPEORM or Flash EEPROM devices in ceramic LC C packages (Flash EEPROMs available in

7133 A-1

Abstract: AN-91 IDT7024 8K RAM 71421
Contextual Info: THE MOST COMMONLY ASKED QUESTIONS ABOUT ASYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-91 By Mark Baumann and Cheryl Brennan What is a dual-port SRAM? A dual -port SRAM is exactly what it sounds like. It is a single static SRAM array accessed by two sets of address, data, and control signals.

OEC97

Contextual Info: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 65,536 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed

HY62U8512

Abstract: HY62U8512LLST-I HY62U8512-I dec97 64Kx8bit
Contextual Info: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 64,000 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed

7134

Abstract: DUAL-PORT STATIC RAM AN-91 IDT7024 low power asynchronous SRAM 64KX8 3.3V 1Kx8 static ram 71421
Contextual Info: THE MOST COMMONLY ASKED QUESTIONS ABOUT ASYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-91 By Mark Baumann and Cheryl Brennan What is a dual-port SRAM? A dual -port SRAM is exactly what it sounds like. It is a single static SRAM array accessed by two sets of address, data, and control signals.

hy62u8512

Contextual Info: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 65,536 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed

1N4004 M4

Abstract: S20 k35 s10 K20 S20 K25 P155 P156 1N4148 HF88S05 P150 P151
Contextual Info: Command Mode SRAM HF88S05 Preliminary Product Specification Product Name KB Doc. No. HF88S05.doc Command Mode SRAM KB Product. No. HF88S05 – Table of Contents – 1. General Description 2. Features

Contextual Info: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time

AS7C3512-15PC

Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

AS7C512-20JC

Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
Contextual Info: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

Contextual Info: ADVANCE MT58LC64K32/36G1 64K X 32/36 SYNCBURST SRAM MICRON I 11CHNOLOr.Y INC SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SU PPLY, +2.5V I/O, P IPELIN ED , BU R ST C O U N TE R AN D S IN G LE -C Y C LE D E S E LE C T FEATURES • • • • • • • • •

Contextual Info: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption

Contextual Info: A63L6364A Series 64K X 64 Bit Synchronous High Speed SRAM Preliminary With Burst Counter and Pipelined Data Output Document Title 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 PRELIMINARY

LQFP 128L

Abstract: IO64
Contextual Info: A63L6364 Series 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output PRELIMINARY Document Title 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 0.1 History

Contextual Info: A63G6364 Series 64K X 64 Bit Synchronous High Speed SRAM Preliminary With Burst Counter and Pipelined Data Output Document Title 64K X 64 Bit Synchronous High Speed SRAM With Burst Counter and Pipelined Data Output Revision History Rev. No. 0.0 0.1 History

sram 16kx8

Contextual Info: P U M A 11 Issue 1.1: October 1988 molate ADVANCED PRODUCT INFORMATION Mosaic Sem iconductor Inc Pinned Uncommited Memory Array Pin Definition Features PGA allowing ASIC combinations of SRAM, EEPROM and UV EPROM Maximum total memory size of 128k x 8 SRAM/EEPROM

Contextual Info: MOSEL VITELIC PRELIMINARY V63C31322048 64K X 32 CMOS SYNCHRONOUS BURST PIPELINED SRAM Features Functional Description • ■ ■ ■ ■ ■ ■ ■ ■ The V63C31322048 is a high-speed synchronous burst pipelined CMOS SRAM organized as 65,536 words by 32 bits that supports both i486/

AS7C3512-20JC

Abstract: AS7C3512-20PC AS7C3512-25JC AS7C3512-25PC
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 Low voltage 64K×8 CMOS SRAM Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • High speed - 20/25 ns address access time - 5/6 ns output enable access time • Very low power consumption

6116 RAM

Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Contextual Info: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns

AS7C3512-15PC

Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

Contextual Info: ADVANCE MICRON * 64K MT58LC64K32/36D8 32/36 SYNCBURST SRAM 64K x 32/36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 4.5 ,5 ,6 ,7 ,8 and 9ns