Untitled
Abstract: No abstract text available
Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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bq4852Y
512Kx8
304-bit
10-year
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AM29LV004T
Abstract: EDI7F33512V
Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512V
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29LV004T
512Kx8
EDI7F33512V
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ELITE FLASH STORAGE TECHNOLOGY INC
Abstract: BPL TV soic-8 200mil
Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over
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512Kx8)
F25L004A
33MHz
50MHz;
75MHz;
100MHz
ELITE FLASH STORAGE TECHNOLOGY INC
BPL TV
soic-8 200mil
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Untitled
Abstract: No abstract text available
Text: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES - Block erase time 1sec (typical) - Sector erase time 90ms(typical) y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz
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512Kx8)
F25L004A
33MHz
50MHz;
75MHz;
100MHz
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Untitled
Abstract: No abstract text available
Text: WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES Access Times 20, 25, 35, 45ns Standard Microcircuit Drawing, 5962-92078 MIL-STD-883 Compliant Devices Available JEDEC Standard 32 pin, Hermetic Ceramic DIP Package 300 Commercial, Industrial and Military Temperature Range (-55°C to +125°C)
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WS512K8-XCX
512Kx8
MIL-STD-883
MIL-PRF-38534
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WED8L24513V
Abstract: No abstract text available
Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24513V
512Kx24
512Kx24
WED8L24513VxxBC
512Kx8
WED8L24513V
DSP5630x
2106xL
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WMS512K8-XXX
Abstract: No abstract text available
Text: WMS512K8-XXX HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 ■ Access Times 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout
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WMS512K8-XXX
512Kx8
MIL-STD-883
10HZX
14HZX
05HXX
06HXX
07HXX
08HXX
09HXX
WMS512K8-XXX
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Untitled
Abstract: No abstract text available
Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non volatile 4,194,304-bit SRAM organ
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bq4850Y
512Kx8
304-bit
32-pin
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TSOP 173 g
Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
71b4142
DD23bST
TSOP 173 g
KM684000ALG-7
4000 CMOS
KM684000ALGI-7L
KM684000ALP-7L
KM684000ALP-5L
KM684000AL
KM684000ALI
KM684000ALI-L
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Untitled
Abstract: No abstract text available
Text: HY628400 Series •'H Y U N D A I 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and
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HY628400
512Kx8bit
HY628400
04/0ct
32pin
525mil
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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KM684000BLP-7
Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types
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KM684000B
512Kx8
512Kx8
32-DIP,
32-SOP,
32-TSOP
003bS17
KM684000BLP-7
KM684000BL
KM684000BLI
KM684000BLI-L
KM684000BL-L
KM684000BLP-5
KM684000BLP-5L
KM684000BLP-7L
KM684000BLG-7L
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Untitled
Abstract: No abstract text available
Text: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n
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AS29F400
512KX8
256KX16
ip9F400T-1SOTC
AS29F400T-ISOU
AS29F400B-55SC
AS29F400B*
AS29F400B-70SI
AS29F400B-90SC
AS29F400B-90SI
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Untitled
Abstract: No abstract text available
Text: BENCHMARQ_ bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power >- Automatic write-protection during power-up/power-down cycles >• Industry-standard 32-pin 512K x 8 pinout >- Conventional SRAM operation;
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bq4015/bq4015Y
512Kx8
32-pin
bq4015
304-bit
bq4015
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Untitled
Abstract: No abstract text available
Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
3E30114
EDI7F8512C120BSC
EDI7F8512C150BSC
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Untitled
Abstract: No abstract text available
Text: benchuarú hicroelec bûE D • 137flfln 0GG1575 015 H B E N bq4115 Advance Information f e j BENCHM ARQ . 512Kx8 NV Pseudo SRAM Features General Description >- Data retention in the absence of power The CMOS bq4115 is a nonvolatile pseudo static RAM organized as
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137flfln
0GG1575
bq4115
512Kx8
bq4115
512Kx
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Untitled
Abstract: No abstract text available
Text: bq 4015 /Y U IM IT R O D E 512Kx8 Nonvolatile SRAM Features >• D a t a r e t e n t i o n fo r a t l e a s t 10 y e a rs w ith o u t pow er >• A utom atic w rite-protection d uring power-up/power-down cycles >• C o n v e n tio n a l SR A M o p e ra tio n ,
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512Kx8
bq40em
bq4013
bq40M
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Untitled
Abstract: No abstract text available
Text: W D ELECTRONIC DESIGNS, INC. EDI8F81025C \ 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi 1 Meg x 8 bit CMOS Static layered epoxy laminate FR4 substrate.
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EDI8F81025C
EDI8F81025C
512Kx8
EDI8F81025LP)
100ns
EDI8F81025LP
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI7C32512C _ ELECTRONIC DESIGNS, INC 512Kx32 Flash 512Kx32 High Speed Flash Module Features The EDI7C32512C is a high speed, high performance, sixteen megabit density Flash module, organized as 512Kx32 bits, containing four 512Kx8 die mounted in a package.
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EDI7C32512C
512Kx32
EDI7C32512C
512Kx32
512Kx8
EDI7C32512C70EQ
EDI7C32512C90EQ
EDI7C32512C120EQ
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in
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EDI8F32512C
512Kx32
EDI8F32512C
512Kx8
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Untitled
Abstract: No abstract text available
Text: _ bq4115Y 512Kx8 NV Pseudo SRAM Features General Description > D ata retention in the absence of power The CMOS bq4115Y is a nonvolatile pseudo sta tic RAM organized as 512K words by 8 bits. The integral control circuitry and backup battery source provide reliable nonvolatility
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bq4115Y
512Kx8
000242b
bq4115
512Kx
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Untitled
Abstract: No abstract text available
Text: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)
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WMF512K8-XXX5
512Kx8
150ns
512Kx8
64KByte
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A14U
Abstract: No abstract text available
Text: a WMS512K8V-XXX WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES • A c c e s s T i m e s 15, 17, 2 0 n s Low Power CMOS ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e L o w V o l t a g e O p e ra tio n : ■
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WMS512K8V-XXX
512Kx8
A14U
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Untitled
Abstract: No abstract text available
Text: T T WS128K32-XXX M/HITE /MICROELECTRONICS • Organized as 128Kx32; User Configurable as 25BKx16 or 512Kx8 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Power Supply 128Kx32 SRAM MODULE FEATURES ■ Access Time 17 and 20nS ■ MIL-STD-883 Compliant Devices Available
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WS128K32-XXX
128Kx32
MIL-STD-883
128Kx32;
25BKx16
512Kx8
00DQb3ñ
09HXX
10HXX
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