512KX8BIT Search Results

Contextual Info: HY628400 Series •'H Y U N D A I 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and

KM29N040T

Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Contextual Info: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective

Contextual Info: HY62KF08401C Series 512Kx8bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

HY628400ALLG-55

Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
Contextual Info: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add

2048x2048

Contextual Info: HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 Series 512Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as 524,288 words by 8 bits. The HY62UF8400 /

Contextual Info: HY62U8400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY62U8400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power

HY628400A

Abstract: HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2
Contextual Info: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and

Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective

R10-T

Contextual Info: PRELIMINARY KM29N040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us

JTW 3D

Contextual Info: M v T h I I ü i k i i 11 U A HY62V8400A- I /HY62U8400A-(I) Series I 512Kx8bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V8400A-(I)/HY62U8400A-(I) is a high­ speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY62V8400A-(I)/HY62U8400A-(I) uses Hyundai's

HY628400LL

Contextual Info: HY628400 Series • H Y U N D A 512Kx8bit CM OS SRAM I DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits C M O S S R A M organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub C M O S process technology

VDR 0047

Contextual Info: HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION FEATURES The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than.

BU 3150

Contextual Info: HY62UF8400A/ HY62QF8400A/ HY62SF8400A/ Series 512Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.2V(min) data retention • Standard pin configuration

VDR 0047

Contextual Info: HY62V8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Revision History Insert Revised - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.06.2000 Final 04 Revised

Contextual Info: HY62UF8400A Series 512Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V min data retention • Standard pin configuration -. 36-ball uBGA The HY62UF8400A is a high speed, super low

Contextual Info: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power

Contextual Info: HY62SF8400A Series 512Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF8400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62SF8400A uses high performance full CMOS process technology and is designed for high speed and low power

29V040

Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us

VDR 0047

Contextual Info: HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.26.2000

Contextual Info: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program

HY628400LLG

Abstract: VDR 0047 HY628400LLT2-55 HY628400 HY628400LG CMOS 4060 512Kx8bit
Contextual Info: HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and

Contextual Info: HY62QF8400A Series 512Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF8400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62QF8400A uses high performance full CMOS process technology and is designed for high speed and low power

HY628400LLT1

Abstract: LA4500 628-400 628400 HY628400LP
Contextual Info: HY 628400- i • H Y U N D A I Series 512Kx8bit C M O S SRAM DESCRIPTION FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min) data retention Standard pin configuration

Contextual Info: HY62U8400A- i -HYUNDAI Series 512Kx8bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62U8400A/HY62U8400A-I is a high­ speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY62U8400A/HY62U8400A-I uses Hyundai's high performance twin tub CMOS process technology