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    HY628400A Search Results

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    HY628400A Price and Stock

    SK Hynix Inc HY628400ALLG-70

    IC,SRAM,512KX8,CMOS,SOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY628400ALLG-70 2
    • 1 $3
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    • 100 $3
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    HY628400ALLG-70 1
    • 1 $3
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    HY628400ALLG-70 1
    • 1 $7.86
    • 10 $7.86
    • 100 $7.86
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    • 10000 $7.86
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    hyn HY628400ALLG70

    512K X 8BIT CMOS SRAM Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY628400ALLG70 15
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    Others HY628400A-LLG-70

    INSTOCK
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    Chip 1 Exchange HY628400A-LLG-70 12
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    SK Hynix Inc HY628400ALLT2-55

    512K x8 bit 5.0V Low Power CMOS slow SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics HY628400ALLT2-55 300
    • 1 -
    • 10 $8.3571
    • 100 $5.5714
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    HY628400A Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY628400A Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALG Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALG-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALG-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLG Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLG-55 Hynix Semiconductor 512K x 8-Bit CMOS SRAM Original PDF
    HY628400ALLG-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLG-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLR2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLR2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLR2-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400A-LLT2-55 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2-55 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALT2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF

    HY628400A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


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    PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    HY628400A

    Abstract: HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


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    PDF HY628400A 512Kx8bit HY628400A 0/Jan99 32pin 525mil HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2

    Untitled

    Abstract: No abstract text available
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power


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    PDF HY628400A 512Kx8bit 32pin 525mil

    BS62LV256-70

    Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
    Text: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277


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    PDF 32Kx8 128Kx8 256Kx8 BS62XV256-25 BS62UV256-15 BS62LV256-70 BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62LV256-70 M5M5408 BS62UV256-15 M5M5408B-55 t0808

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


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    PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


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    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    hyundai

    Abstract: DS2228 DS1246 dallas date code DS1556 On semiconductor date Code ON SEMICONDUCTOR TRACEABILITY DS1248 DS1251 DS1486
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 31, 2000 Subject: PRODUCT CHANGE NOTICE – G003104 Description: New Qualified RAM Supplier for 1MEG and 4MEG Modules and SIPSTIK’s Hyundai.


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    PDF G003104 HY628100B, HY62U8100B, HY628400A, HY62V8403A. DS1245 DS1246 DS1248 DS1251 DS1254 hyundai DS2228 DS1246 dallas date code DS1556 On semiconductor date Code ON SEMICONDUCTOR TRACEABILITY DS1248 DS1251 DS1486

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    628400

    Abstract: No abstract text available
    Text: HY628400A Series 512K x8bit CMOS SRAM DESCRIPTION FEATURES T h e H Y 6 2 8 4 0 0 A is a high-speed, low pow er and 4 M bits C M O S S R A M organized as 5 1 2K words by 8 bits. Th e H Y 6 2 8 4 0 0 A uses Hyundai's high perform ance twin tub C M O S process technology


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    PDF HY628400A Y628400A HY628400A 628400

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


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    PDF GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16

    FBGA 9 x 20

    Abstract: HY62CT08081E hynix hy T0808
    Text: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25


    OCR Scan
    PDF 100ns 120ns 150ns 128KX 512Kx 256Kx HY62UF16101C HY62QF16101C HY62SF16101C HY62UF16201A FBGA 9 x 20 HY62CT08081E hynix hy T0808