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    HY628400 Search Results

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    HY628400 Price and Stock

    SK Hynix Inc HY628400LLT2-55

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    Bristol Electronics HY628400LLT2-55 40
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    SK Hynix Inc HY628400ALLG-70

    IC,SRAM,512KX8,CMOS,SOP,32PIN,PLASTIC
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    Quest Components HY628400ALLG-70 2
    • 1 $3
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    HY628400ALLG-70 1
    • 1 $3
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    HY628400ALLG-70 1
    • 1 $7.86
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    hyn HY628400ALLG70

    512K X 8BIT CMOS SRAM Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
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    ComSIT USA HY628400ALLG70 15
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    Others HY628400A-LLG-70

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    Chip 1 Exchange HY628400A-LLG-70 12
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    SK Hynix Inc HY628400ALLT2-55

    512K x8 bit 5.0V Low Power CMOS slow SRAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics HY628400ALLT2-55 300
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    • 100 $5.5714
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    HY628400 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY628400 Hynix Semiconductor IC,SRAM,512K x 8,CMOS,DIP,32PIN,PLASTIC Scan PDF
    HY628400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY628400A Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALG Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALG-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALG-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLG Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLG-55 Hynix Semiconductor 512K x 8-Bit CMOS SRAM Original PDF
    HY628400ALLG-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLG-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLR2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLR2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLR2-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400A-LLT2-55 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2-55 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALLT2-I Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2 Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF
    HY628400ALR2-E Hynix Semiconductor 512K x8 bit 5.0V Low Power CMOS slow SRAM Original PDF

    HY628400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


    Original     		PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    HY628400A

    Abstract: HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    Original     		PDF HY628400A 512Kx8bit HY628400A 0/Jan99 32pin 525mil HY628400ALG HY628400ALLG HY628400ALLR2 HY628400ALLT2 HY628400ALR2 HY628400ALT2

    Untitled

    Abstract: No abstract text available
    Text: HY628400A Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power


    Original     		PDF HY628400A 512Kx8bit 32pin 525mil

    HY628400LLG

    Abstract: VDR 0047 HY628400LLT2-55 HY628400 HY628400LG CMOS 4060 512Kx8bit
    Text: HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    Original     		PDF HY628400 512Kx8bit HY628400 Full80) 04/Jan99 32pin 525mil HY628400LLG VDR 0047 HY628400LLT2-55 HY628400LG CMOS 4060

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    BS62LV256-70

    Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
    Text: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277


    Original     		PDF 32Kx8 128Kx8 256Kx8 BS62XV256-25 BS62UV256-15 BS62LV256-70 BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62LV256-70 M5M5408 BS62UV256-15 M5M5408B-55 t0808

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    hyundai

    Abstract: DS2228 DS1246 dallas date code DS1556 On semiconductor date Code ON SEMICONDUCTOR TRACEABILITY DS1248 DS1251 DS1486
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: July 31, 2000 Subject: PRODUCT CHANGE NOTICE – G003104 Description: New Qualified RAM Supplier for 1MEG and 4MEG Modules and SIPSTIK’s Hyundai.


    Original     		PDF G003104 HY628100B, HY62U8100B, HY628400A, HY62V8403A. DS1245 DS1246 DS1248 DS1251 DS1254 hyundai DS2228 DS1246 dallas date code DS1556 On semiconductor date Code ON SEMICONDUCTOR TRACEABILITY DS1248 DS1251 DS1486

    Untitled

    Abstract: No abstract text available
    Text: HY628400 Series •'H Y U N D A I 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and


    OCR Scan     		PDF HY628400 512Kx8bit HY628400 04/0ct 32pin 525mil

    HY628400LP

    Abstract: No abstract text available
    Text: HY628400-I Series 'H Y U N D A I 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512KX 4b75GÃ 1DE02-11-MÃ HY628400LP-I HY628400LLP-I HY628400LP

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY628400-I Series _ 512Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512Kx 1DE02-11-MAY94 4b750flfl D003fll2 HY628400LP-I

    HY628400LL

    Abstract: No abstract text available
    Text: HY628400 Series • H Y U N D A 512Kx8bit CM OS SRAM I DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits C M O S S R A M organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub C M O S process technology


    OCR Scan     		PDF HY628400 512Kx8bit 11f350) 32pin 525mil 04K3cL97 HY628400LL

    33A1S

    Abstract: HY628400LG-I
    Text: HY628400-I Series •HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512KX 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I 33A1S

    HY628400

    Abstract: HY628400LP
    Text: » H Y U N D A I H Y 6 2 8 4 0 0 va I w n w i l i S e r ie s 512Kx8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF 512Kx8-bit HY628400 FEATURES01-11-MAY94 4b75GÃ HY628400P HY628400LP HY628400LLP HY628400LP

    A17a

    Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
    Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16

    628400

    Abstract: No abstract text available
    Text: HY628400A Series 512K x8bit CMOS SRAM DESCRIPTION FEATURES T h e H Y 6 2 8 4 0 0 A is a high-speed, low pow er and 4 M bits C M O S S R A M organized as 5 1 2K words by 8 bits. Th e H Y 6 2 8 4 0 0 A uses Hyundai's high perform ance twin tub C M O S process technology


    OCR Scan     		PDF HY628400A Y628400A HY628400A 628400

    HY628400

    Abstract: No abstract text available
    Text: HYUNDAI HY628400 Series SEMICONDUCTOR 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high speed, low power and 524,288 x 8-bit CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process. This high reliability process coupled with innovative circuit design techni­


    OCR Scan     		PDF HY628400 512KX 100ns 1DE01- 0-MAY93 HY628400P

    HY628400LP

    Abstract: A13OE L03C DY02
    Text: HY628400 Series "HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 HY628400P HY628400LP A13OE L03C DY02

    5DOF

    Abstract: A12U HY628400 HAB 20-S
    Text: HY628400 Series » H Y U N D A I 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400 512Kx 288x8-bits speed-55/70/85/100ns 00b353 1DE01 -11-MAY95 5DOF A12U HAB 20-S

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


    OCR Scan     		PDF GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16

    128k x8 SRAM TSOP

    Abstract: HY62U256
    Text: SRAM PRODUCT 64Kbit As of '96.3Q DESCRIPTION PART NO, SPEED ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) AVAILABILITY TTL CMOS 50 2 1 50 2 1 50 2 1 100/120/150 25 0.5 0.015 5 5 /7 0 /8 5 /1 0 0 8 1 1 HY62256B-I (E T ) 7 0 /8 5 /1 0 0 8 1 0.1 HY62V256B(3.3V)


    OCR Scan     		PDF 64Kbit HY6264A HY6264A-I 256Kbit HY62256A HY62256A-I HY62V256( HY62256B HY62256B-I HY62V256B 128k x8 SRAM TSOP HY62U256

    TC551001a

    Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
    Text: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##


    OCR Scan     		PDF HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 HY62256A MB84256A TC551001a CXK584000 Fujitsu FLL 100 cxk58527 uPD434000 M5M51008 SRM20256