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    1DE01 Search Results

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    Amphenol Communications Solutions L17H1DE0120

    DSUB, STAMPED SIGNAL 3A, DUAL PO
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    DigiKey L17H1DE0120 Tray 1,120
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    Newark L17H1DE0120 Bulk 1,120
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    Murata Manufacturing Co Ltd GRM0115C1E7R1DE01L

    CAP CER 7.1PF 25V C0G 08004
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    DigiKey GRM0115C1E7R1DE01L Reel 50,000
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    Murata Manufacturing Co Ltd GRM0115C1C6R1DE01L

    CAP CER 6.1PF 16V C0G 08004
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    DigiKey GRM0115C1C6R1DE01L Reel 50,000
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    Murata Manufacturing Co Ltd GRM0115C1C9R1DE01L

    CAP CER 9.1PF 16V C0G 08004
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    DigiKey GRM0115C1C9R1DE01L Reel 50,000
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    TME GRM0115C1C9R1DE01L 50,000
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    Murata Manufacturing Co Ltd GRM0115C1E8R1DE01L

    CAP CER 8.1PF 25V C0G 08004
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    DigiKey GRM0115C1E8R1DE01L Reel 50,000
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    1DE01 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Y52 h 85c

    Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076
    Contextual Info: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    Original
    HD66522 160-Channel ADE-207-302 HD66522 Y52 h 85c ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 1DD01 Y148 y158 0F076 PDF

    sob 214

    Contextual Info: "HYUNDAI HY52B4DD Series V- 5 1 2 K n B-bit CM DS SRAM PHEUMINAHY DESCRIPTION The HYB2B40D is a high-speed, low pow er and 524.2SB x 9-bits CMDS static RAM fabricated using Hyundai's high perform ance tw in tub CMOS pro le s s technology. This high reliability process coupled w ith innovative circuit


    OCR Scan
    HY52B4DD HYB2B40D HYB2B400 HY52B40G 1DED1-11-MAYM HY52B400P HYB204OOLP HYB2B400LLP HYB2B400G sob 214 PDF

    HY628400

    Abstract: HY628400LP
    Contextual Info: » H Y U N D A I H Y 6 2 8 4 0 0 va I w n w i l i S e r ie s 512Kx8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    512Kx8-bit HY628400 FEATURES01-11-MAY94 4b75GÃ HY628400P HY628400LP HY628400LLP HY628400LP PDF

    Y52 h 85c

    Abstract: 1df2 D0200 3i10 OF129
    Contextual Info: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display HITACHI Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This L S I incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped R A M , which is suitable for


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    HD66522 160-Channel HD66522 Y52 h 85c 1df2 D0200 3i10 OF129 PDF

    Contextual Info: ••HYUNDAI U U HYM5V32414A N-Series 4M x 32-bit CMOS DRAM MODULE DESCRIPTION TTie HYM5V32414A is a 4M x 32-bit EDO mode CMOS DRAM Module consisting of eight HY51V17404A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0.22nF decoupling capacitor is


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    HYM5V32414A 32-bit HY51V17404A HYM5V32414ATNG/ASLTNG 181MIN 10E01-10-8EP9S HYM5V32414 PDF

    1DF27

    Abstract: BY160 0014f 1DE27 D0200 0024F 0F227
    Contextual Info: HD66522 Preliminary 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display HITACHI Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


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    HD66522 160-Channel HD66522 1DF27 BY160 0014f 1DE27 D0200 0024F 0F227 PDF

    Contextual Info: HYM532400 N-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532400 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5116400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is


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    HYM532400 32-bit HY5116400A HYM532400TNG/SLTNG A0-A11) DQO-31) 1DE01-10-JAN95 PDF

    A17a

    Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
    Contextual Info: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16 PDF

    datasheet tca 761

    Abstract: 1DF29 1DF27 1df*27 L239 y158 1DF28 TRANSZORB 24v Y4 n diode HD66522
    Contextual Info: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    Original
    HD66522 160-Channel HD66522 A16A0 datasheet tca 761 1DF29 1DF27 1df*27 L239 y158 1DF28 TRANSZORB 24v Y4 n diode PDF

    HY628400

    Contextual Info: HYUNDAI HY628400 Series SEMICONDUCTOR 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high speed, low power and 524,288 x 8-bit CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process. This high reliability process coupled with innovative circuit design techni­


    OCR Scan
    HY628400 512KX 100ns 1DE01- 0-MAY93 HY628400P PDF

    HY628400LP

    Abstract: A13OE L03C DY02
    Contextual Info: HY628400 Series "HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    HY628400 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 HY628400P HY628400LP A13OE L03C DY02 PDF

    5DOF

    Abstract: A12U HY628400 HAB 20-S
    Contextual Info: HY628400 Series » H Y U N D A I 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan
    HY628400 512Kx 288x8-bits speed-55/70/85/100ns 00b353 1DE01 -11-MAY95 5DOF A12U HAB 20-S PDF