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Murata Manufacturing Co Ltd GRM0336R1E9R1DD01D CAP CER 9.1PF 25V R2H 0201
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DigiKey	GRM0336R1E9R1DD01D	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd GRM0336R1E8R1DD01D CAP CER 8.1PF 25V R2H 0201
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DigiKey	GRM0336R1E8R1DD01D	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd GRM0335C1E6R1DD01D CAP CER 6.1PF 25V C0G/NP0 0201
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DigiKey	GRM0335C1E6R1DD01D	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd GRM0336R1E5R1DD01D CAP CER 5.1PF 25V R2H 0201
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DigiKey	GRM0336R1E5R1DD01D	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd GRM0335C1H5R1DD01D CAP CER 5.1PF 50V C0G/NP0 0201
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DigiKey	GRM0335C1H5R1DD01D	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1DD01 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst	OCR Scan	TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0	PDF
TC55V4326FFI-150 Abstract: No abstract text available Text: TOSHIBA TC55V4326FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FFI is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4326FFI-150 072-WORD 32-BIT TC55V4326FFI 304-bit LQFP100-P-1420-0	PDF
TC55V16176FF Abstract: TC55V16176FF-167 Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V16176FF-167 576-WORD 18-BIT TC55V16176FF 368-bit LQFP100-P-1420-0	PDF
TC55V16366FF-167 Abstract: No abstract text available Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V16366FF-167 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0	PDF
TC55V4376FF Abstract: TC55V4376FF-100 Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor	OCR Scan	TC55V4376FF-100 072-WORD 36-BIT TC55V4376FF 592-bit LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor	OCR Scan	TC55V4336FFI-83 TC55V4336FFI 304-bit LQFP100-P-1420-0	PDF
EN2952 Abstract: No abstract text available Text: TOSHIBA TC55V4356FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4356FF is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4356FF-167 072-WORD 36-BIT TC55V4356FF 592-bit LQFP100-P-1420-0 EN2952	PDF
TC55V4366FF Abstract: TC55V4366FF-167 Text: TOSHIBA TC55V4366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FF is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4366FF-167 072-WORD 36-BIT TC55V4366FF 592-bit LQFP100-P-1420-0	PDF
TC55V4366FFI-150 Abstract: No abstract text available Text: TOSHIBA TC55V4366FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FFI is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4366FFI-150 072-WORD 36-BIT TC55V4366FFI 592-bit LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V4326FF-167#-150#-133 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4326FF-167# TC55V4326FF 304-bit LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A TC55V2325FF-100J TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2,097,152 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst	OCR Scan	TC55V2325FF-100J TC55V2325FF TCC5Y2025FF G4KX32 HS-TD-18E LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor	OCR Scan	TC55V4376FF-100 TC55V4376FF 592-bit I/032, LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V16366FF-167# 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V4316FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4316FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4316FF-167 TC55V4316FF 304-bit LQFP100-P-1420-0	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V16176FF-167 TC55V16176FF 368-bit LQFP100-P-1420-0	PDF
tm 0917 Abstract: No abstract text available Text: TOSHIBA TC55V4366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FF is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4366FF-167# TC55V4366FF 592-bit LQFP100-P-1420-0 tm 0917	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V4366FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FFI is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4366FFI-150 TC55V4366FFI 592-bit LQFP100-P-1420-0	PDF
Y52 h 85c Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076 Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for	Original	HD66522 160-Channel ADE-207-302 HD66522 Y52 h 85c ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 1DD01 Y148 y158 0F076	PDF
TC55V1326AFF Abstract: TC55V1326AFF-66 TC55V1326 Text: TOSHIBA TC55V1326AFF-66 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1326AFF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V1326AFF-66 768-WORD 32-BIT TC55V1326AFF 576-bit LQFP100-P-1420-0 TC55V1326AFF-66 TC55V1326	PDF
Untitled Abstract: No abstract text available Text: HYM532220 X-Series “H Y U N D A I 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The H Y M 532 220 is a 2M x 3 2 -bit Fast page m ode C M O S DRAM m odule consisting of four H Y 5 1 18160 in 44/50 pin TS O P II on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.2 2\|iF decoupling capacitor is m ounted	OCR Scan	HYM532220 32-bit 532220TX DQ0-DQ31) 1DD01-10-FEB95 HYMS32220/SL HYM532220TXG HYM532220SLTXG	PDF
HY628100 Abstract: No abstract text available Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	HY628100 128Kx 85/100/120ns 1DD01-11-MAY94 ML750Ã GD0373b	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC55V16356FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16356FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V16356FF-167 TC55V16356FF 368-bit LQFP100-P-1420-0	PDF
zd 3.1v Abstract: TC55V4326FF TC55V4326FF-167 Text: TOSHIBA TC55V4326FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM	OCR Scan	TC55V4326FF-167 072-WORD 32-BIT TC55V4326FF 304-bit LQFP100-P-1420-0 zd 3.1v	PDF
TC55V4376FFI-83 Abstract: No abstract text available Text: TO SH IBA TC55V4376FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FFI is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor	OCR Scan	TC55V4376FFI-83 072-WORD 36-BIT TC55V4376FFI 592-bit LQFP100-P-1420-0 TC55V4376FFI-83	PDF

1DD01 Search Results

1DD01 Price and Stock

Murata Manufacturing Co Ltd GRM0336R1E9R1DD01D

Murata Manufacturing Co Ltd GRM0336R1E8R1DD01D

Murata Manufacturing Co Ltd GRM0335C1E6R1DD01D

Murata Manufacturing Co Ltd GRM0336R1E5R1DD01D

Murata Manufacturing Co Ltd GRM0335C1H5R1DD01D

1DD01 Datasheets Context Search

Untitled

TC55V4326FFI-150

TC55V16176FF

TC55V16366FF-167

TC55V4376FF

Untitled

EN2952

TC55V4366FF

TC55V4366FFI-150

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

tm 0917

Untitled

Y52 h 85c

TC55V1326AFF

Untitled

HY628100

Untitled

zd 3.1v

TC55V4376FFI-83