HY5116400A Search Results

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

MAX7523

Contextual Info: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.

Contextual Info: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating

HY5116400A

Contextual Info: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

HYM564400A

Contextual Info: HYM564400A N-Series 4Mx64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glassepoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The

TAA 691

Contextual Info: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: -HYUNDAI HYM572A400A N-Series 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOP-ll and two 16-bit BiCMOS line drivers in TSSOP on a t68 pin glass-epoxy printed circuit board.

CH371

Contextual Info: " H Y U H D ftl HYM572A400A N-Series 4Mx72-btt CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS tin driver in TSSOP on a 168 pin glass-epoxy

socket, 72 pin, simm

Contextual Info: HYM572A400A N-Series 4Mx72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A400A is a 4M x 72-bit Fast page mode CMOS DRAM module consisting of eighteen HY5116400A in 24/28 pin TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM572A400ATNG/ASLTNG is

Contextual Info: HYUNDAI HYM564400A N-Series 4M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564400A is a 4M x 64-brt Fast page mode CMOS DRAM module consisting of sixteen HY5116400A in 24/28 pin SOJ or TSOF-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit

Contextual Info: HYM532400 N-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532400 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5116400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is

Contextual Info: •HYUNDAI H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

HY5118160JC

Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Contextual Info: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM

HY5118160

Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Contextual Info: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE

Contextual Info: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

d 100 d

Abstract: Y514100A HYM532220
Contextual Info: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"

Contextual Info: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16