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    1CE13-10-DEC94

    Abstract: HY5117400A
    Text: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted


    Original     		HYM532410A 4Mx32-bit 32-bit HY5117400A HYM532410AAM/ASLM/ATM/ASLTM HYM532410AMG/ASLMG/ATMG/ASLTMG 1CE13-10-DEC94 72pin 1CE13-10-DEC94 HY5117400A PDF

    HY5117400A

    Abstract: No abstract text available
    Text: HYM532810A M-Series 8Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM532810AM/ASLM/ATM/ASLTM are Tin-Lead plated and


    Original     		HYM532810A 8Mx32-bit 32-bit HY5117400A HYM532810AM/ASLM/ATM/ASLTM HYM532810AMG/ALMG/ATMG/ALTMG 1CF13-10-DEC94 72pin PDF

    HYM536410AMG

    Abstract: hym536410am HY5117400A HY514100A
    Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /


    Original     		HYM536410A 4Mx36-bit 36-bit HY5117400A HY514100A HYM536410AM HYM536410AMG 1CE11-10-DEC94 HY5117400A PDF

    HY5117400A

    Abstract: HY514100A HYM536810AM HYM536810AMG
    Text: HYM536810A M-Series 8Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The


    Original     		HYM536810A 8Mx36-bit 36-bit HY5117400A HY514100A HYM536810AM/ASLM/ATM/ASLTM HYM536810AMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM536810AMG PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR PDF

    HYM53

    Abstract: No abstract text available
    Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT PDF

    M53241

    Abstract: No abstract text available
    Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		HYM532410 32-bit HY5117400A HYM532410TNG/SLTNG 32va24 004J1 1DE02-10-AUG95 M53241 PDF

    HY5117400A

    Abstract: No abstract text available
    Text: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A 1AD27-10-M HY5117400AJ HY5117400ASU HY5117400AT HY5117400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM572A410A N-Series “H Y U N D A I 4M X 72-bit CMOS DRAM MODULE DESCRIPTION The HYM572A410A is a 4M x 72-bit Fast page m ode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		HYM572A410A 72-bit HY5117400A 16-bit HYM572A410ATNG/ASLTNG DQ0-DQ72) 1EE11-10-DEC94 PDF

    Untitled

    Abstract: No abstract text available
    Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin


    OCR Scan     		8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681 PDF

    Untitled

    Abstract: No abstract text available
    Text: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		HYM532810A 8Mx32-blt 32-bit HY5117400A HYM532810AM/ASLM/ATM/ASLTM HYM53281OAMG/ALMG/ATMG/ALTMG 72pin HYM53281OA/AL HYM532810AT/ALT PDF

    MAX7523

    Abstract: No abstract text available
    Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.


    OCR Scan     		HY5117400A, HY5116400A HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT HY5116400AJ Y5116400ASLJ HY5116400AT HY5116400ASLT MAX7523 PDF

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: HY5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The HY5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53681OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOP1I and eight HY514100Ain 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit


    OCR Scan     		HYM536810A 36-bit HYM53681OA HY5117400A HY514100Ain HYM53681OAM/ALM/ATM/ALTM HYM53681OAMG/ALMG/ATMG/ALTMG HYM536810A/AL PDF

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HYM536A810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is m ounted tor each


    OCR Scan     		HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A81OAMG/ASLMG DQ0-DQ35) 1CF16-10-AUG95 PDF

    simm 72 dram

    Abstract: No abstract text available
    Text: - H Y U N D A I H Y M 5 3 2 8 1 0 A 8M X M - S e r ie s 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitor is mounted


    OCR Scan     		32-bit HYM532810A HY5117400A HYM53281OAM/ALM/ATM/ALTM HYM53281OAMG/ALMG/ATMG/ALTMG 1CF13-10-DEC94 HYM532810A/AL HYM532810AT/ALT simm 72 dram PDF

    Untitled

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM536A410A 36-bit HYM536A41OA HY5117400A HYM536A41OAM/ASLM HYM536A41OAMG/ASLMG A0-A10) DQ0-DQ35) 1CE17-10-AUG95 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y C 5 3 6 4 1 0 • • H Y U N D A I S e r i e s 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in


    OCR Scan     		4Mx36 HYC536410 HY5117400ASLTand HY5141OOALT x36/18 50fla 1MC04-01-FEB95 0004DSB HYC536410-Series PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM536A410A 36-bit HYM536A41OA HY5117400A HYM536A41OAM/ASLM HYM536A410AMG/ASLMG E17-10-AUG95 0005b42 PDF

    Untitled

    Abstract: No abstract text available
    Text: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit


    OCR Scan     		36-bit HYM536810A HY5117400A HY514100A HYM53681OAM/ALM/ATM/ALTM HYM53681OAMG/ALMG/ATMG/ALTMG HYM536810A/AL HYM536810AT/ALT 4b75DflA PDF

    HYM53241

    Abstract: No abstract text available
    Text: -0 0 Y U I I P I I I HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|*Fdecoupling are mounted


    OCR Scan     		HYM532410A 4Mx32-bit 32-bit HY5117400A HYM53241OAAM/ASLM/ATM/ASLTM HYM532410AMG/ASLMG/ATMG/ASLTMG 4Mx32-blt 72pin HYM53241OA/AL HYM53241 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM564410A N-Series 4M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564410A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit


    OCR Scan     		HYM564410A 64-bit HY5117400A 16-bit 22\iF HYM564410ANG/ATNG/ASLNG/ASLTNG DQ0-DQ63) 1EE16-10-JAN95 PDF

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: HYC532410 Series ‘ HYUNDAI 4Mx32 DRAM CARD DESCRIPTION The HYC532410 is the DRAM memory card consisting of eight HY5117400ASLT built in the metal plate housing. The Hyundai DRAM card is optimized orthe applications such as buffering, main and add-in memory in the portable


    OCR Scan     		HYC532410 4Mx32 HY5117400ASLT x32/16 1MC03-01-FEB95 HYC532410-Series jeida dram 88 pin PDF