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    SK Hynix Inc HYM532100AM-70

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    HYM53 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HYM5321600AM Hynix Semiconductor 16Mx32 bit FP DRAM MODULE based on 16Mx1 DRAM, 5V, 4K-Refresh Original PDF

    HYM53 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are


    OCR Scan     		HYM532124A 32-bit HY5118164B HYM532124AW/ASLW HYM532124AWG/ASLWG HYM532124A HYM532124AT A0005 PDF

    HYM53

    Abstract: No abstract text available
    Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53 PDF

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG PDF

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		HYM532224A 32-bit HY5117804B HYM532224AE/ASLE/ATE/ASLTE HYM532224AEG/ASLEG/ATEG/ASLTEG 171M1N DD054M 1CE13-10-0EC94 PDF

    HYM536100M

    Abstract: No abstract text available
    Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted


    OCR Scan     		HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM536400B 36-bit HY5116400 HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		HYM532100A 32-bit HY514400A 22/iF HYM5321OOAM/ALM HYM532100AMG/ALMG 1CC03-00-M PDF

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for


    OCR Scan     		HYM532220A 32-bit HY5118160B HYM532220AW/SLW/TW/SLTW HYM532220AWG/SLWG 880mW 825mW 70MIN. PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.


    OCR Scan     		32100A 32-blt HYM532100A 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG compatible004M 750M6 004t1 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		HYM53221OA 32-bit HYM53221 HY5117800B HYM53221OAE/ASLE/ATE/ASLTE 4b750Afl 1CE13-10-DEC94 HYM532210A PDF

    Untitled

    Abstract: No abstract text available
    Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM532256A 32-bit HY534256A 22/tF HYM532256AM/ALM HYM532256AMG/ALMG 4b75oaa PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB PDF

    HYM532810

    Abstract: HY5117400 HYM53
    Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,


    OCR Scan     		HYM532810 32-blt 32-bit HY5117400 HYM532810M/LM HYM532810MG/LMG 1CF02-10-JUN94 4b75D 0D03577 HYM53 PDF

    HYM532414

    Abstract: HY5117404
    Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


    OCR Scan     		HYM532414 32-bit HY5117404A HYM532414TNG/SLTNG A0-A10) DQ0-DQ31) 1CE13-10-DEC94 YM532414 HY5117404 PDF

    HYM532810BM

    Abstract: HY5117400B HYM532810B HYM532810BMG
    Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		HYM532810B 8Mx32 8Mx32-bit HY5117400B HYM532810BM HYM532810BMG 72-Pin PDF

    HY5117404B

    Abstract: No abstract text available
    Text: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM536A814B 8Mx36 4Mx36-bit HY5117404B HYM536A814BM HYM536A814BMG 72-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 4b750flfl PDF

    HY5117404C

    Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
    Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532414C 4Mx32 4Mx32-bit HY5117404C HYM532414CM HYM532414CMG 72-Pin DEC-97 PDF

    HY5117404C

    Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
    Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		HYM532814C 8Mx32 8Mx32-bit HY5117404C HYM532814CM HYM532814CMG 72-Pin HYM532814 PDF

    M53241

    Abstract: No abstract text available
    Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		HYM532410 32-bit HY5117400A HYM532410TNG/SLTNG 32va24 004J1 1DE02-10-AUG95 M53241 PDF

    HYM532200

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532200A M-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200Ais a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting o f sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iFdecoupling capacitor is mounted for each ORAM.


    OCR Scan     		HYM532200A 32-bit HYM532200Ais HY514400A HYM532200AM/ALM HYM532200AMG/ALMG DQ0-DQ31) 1C003-01-FEB94 HYM532200 PDF

    Untitled

    Abstract: No abstract text available
    Text: "H YU NDA I HYM532220A E-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HVM532220A is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72pin glass-epoxy printed circuit board. 0.22 iFdecoupling


    OCR Scan     		HYM532220A 32-bit HVM532220A HY5117800B 72pin HYM532220AE/ASLE/ATE/ASLTE HYM532220AEG/ASLEG/ATEG/ASLTEG DQ0-DQ31) 1CE13-10-DEC PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM536400 Series 4M X 36-bit C M O S DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of thirty six HY514100 In 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM536400 36-bit HY514100 HYM536400M HYM536400MG 198mW 396mW tRWU34) PDF

    PD1-P04

    Abstract: No abstract text available
    Text: “ H Y U M P f t l • HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8M x32-bit Fast Page mode CMOS DRAM m odule consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1


    OCR Scan     		HYM532810C 8Mx32 x32-bit HY5117400C HYM532810CM HYM532810CMG 72-Pln 72iMiN. PQ062 PD1-P04 PDF