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Catalog Datasheet	MFG & Type	PDF	Document Tags
HY5117404B Abstract: No abstract text available Text: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF	Original	PDF	HYM536A814B 8Mx36 4Mx36-bit HY5117404B HYM536A814BM HYM536A814BMG 72-Pin
Untitled Abstract: No abstract text available Text: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted	OCR Scan	PDF	HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG 012SQ171MN 1CF15-10-FEBM
Untitled Abstract: No abstract text available Text: - HY U N D A I HYM536A814B M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^Fdecoupling capacitors are mounted	OCR Scan	PDF	HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG DQ0-DQ35) HYM536A814B/BSL
Untitled Abstract: No abstract text available Text: »HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414B is a 4 M x 36-bit EDO mode CMOS DRAM module consisting of nineHV5117404B in 24/26 pin SOJ on a 72 pm glass-epoxy printed circuit board. O.inF and O.OlnF decoupling capacitor is mounted for each	OCR Scan	PDF	HYM536A414B 36-bit nineHV5117404B HYM536A414BM/BSLM HYM536A414BMG/BSLMG A0-A10) DQ0-DQ35) 1CE16-10-APR96
HYM532814 Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2	OCR Scan	PDF	HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
HYM532814 Abstract: TRA8 L HYM536410 HYM532100AM HYM532100 Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .	OCR Scan	PDF	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM 1Mx32 2Mx32 HYM532814 TRA8 L HYM536410 HYM532100AM HYM532100
HYM536100AM Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.	OCR Scan	PDF	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM HYM536A414AM HYM536A414BM HYM532814AM HYM532814BM HYM536100AM HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HVM536A414B is a 4M x 36-bit EDO mode CMOS DRAM module consisting of nine HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitor is mounted for each	OCR Scan	PDF	HYM536A414B 36-bit HVM536A414B HY5117404B HYM536A414BM/BSLM HYM536A414BMG/BSLMG 200ft 171MN. 60W-3S)