FM28V100-TG
Abstract: FM28V100-TGTR tca 335 A
Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process
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FM28V100
128Kx8
33MHz
128Kx8
32-pin
FM28V100
FM28V100,
FM28V100-TG
A9482296TG
FM28V100-TGTR
tca 335 A
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bq4013MA-120
Abstract: bq4013Y bq4013YMA-120 bq4013
Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy
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bq4013/Y
128Kx8
576-bit
32-pin
bq4013MA-120
bq4013Y
bq4013YMA-120
bq4013
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FM18L08
Abstract: FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
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FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TG
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AM29F010
Abstract: No abstract text available
Text: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable
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EDI7C32128C
128Kx32
EDI7C32128C
512Kx32
128Kx8
EDI7C32512C70EQ
EDI7C32512C70EI
AM29F010
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EDI8L24129V
Abstract: No abstract text available
Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution
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EDI8L24129V
128Kx24
EDI8L24129VxxBC
128Kx8
EDI8L24129V
DSP5630x
21060L
21062L
EDI8L24129V,
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Untitled
Abstract: No abstract text available
Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns Page Write Cycle Time 10ms Max. JEDEC Approved Packages Data Polling for End of Write Detection Hardware and Software Data Protection
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE MRAM 128Kx8-SOP 3DMR1M08VS1426 Magnetoresistive Ram MODULE 1 Mbit MRAM organized as 128Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Organized as 128Kx8. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access
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128Kx8-SOP
3DMR1M08VS1426
128Kx8
128Kx8.
MMXX00000000XXX
3DFP-0426-REV
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Untitled
Abstract: No abstract text available
Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby
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EDI88128CS
128Kx8
EDI88128LPS)
MIL-PRF-38535.
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5962-96691
Abstract: WMS128K8-XXX
Text: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)
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WMS128K8-XXX
128Kx8
120ns
MIL-STD-883
04HUX
01HTX
100ns
02HTX
03HTX
5962-96691
WMS128K8-XXX
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ACU51
Abstract: EEPROM128KX8 128KX8
Text: New Product Release Advanced Control Unit ACU ACU51 Block EEPROM 128Kx8 Four 8-Bit Parallel Ports Power Control Two Synch. Serial Ports Four Asynch. Serial Ports Digital Interface and Control Specifications Features • Size and Weight: 1.0” x 1.4” x 0.12”, 3 grams
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ACU51
128Kx8
8051-based,
12-bit
10-bit
16-bit
RS-232,
ACU51
EEPROM128KX8
128KX8
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EM128L08
Abstract: EM128L08N EM128L08T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L08 is an integrated memory device
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EM128L08
EM128L08
128Kx8
23033-B
EM128L08N
EM128L08T
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alarm clock IC
Abstract: bq4842y
Text: bq4842Y RTC Module with 128Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, CPU supervisor, crystal, pow er-fail control circuit, and battery The bq4842Y RTC Module is a non volatile 1,048,576-bit SRAM organ ized as 131,072 words by 8 bits with
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bq4842Y
128Kx8
10-year
576-bit-up
alarm clock IC
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TAA 310A
Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible
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KM681000B
128Kx8
0023b3?
KM681OOOÃ
0D23b3Ã
TAA 310A
KM681000BLP-7L
128k x8 SRAM TSOP
km681000blp-7
KM681000BL
KM681000BLE
KM681000BL-L
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KM68U1000B
Abstract: KM68V1000B
Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V
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KM68V1000B,
KM68U1000B
128Kx8
128Kx8
KM68V1000B
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time
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128Kx8
AS7C1024
AS7C1024L
128Kx8
32-pin
7C256
7C512
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Untitled
Abstract: No abstract text available
Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli
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bq4013/bq4013Y
128Kx8
bq4013
576-bit
32-pin
10-year
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Untitled
Abstract: No abstract text available
Text: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8
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EDI5M32128C
128Kx32
EDI5M32128C
128Kx8
1b-10
020x45Â
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EDI88130CS20MI
Abstract: No abstract text available
Text: ^EDI _ EDI88130CS Beclronic Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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EDI88130CS
128Kx8
EDI88130CS
EDI88130LPS,
EDI88130CS17MC
EDI88130CS20MC
EDI88130LPS17MC
EDI88130CS20MI
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Untitled
Abstract: No abstract text available
Text: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an
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EDI88128C
128Kx8
EDI88128C
EDI88130C
EDl88128LPandEDI88130LP,
88128C
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Untitled
Abstract: No abstract text available
Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash
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EDI7F82048C
EDI7F82048C
128Kx8
A17-A20
Q01fl34
EDI7F82048C120BSC
EDI7F82048C150BSC
EDI7F82048C200BSC
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Untitled
Abstract: No abstract text available
Text: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo
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EDI7F8512C
512Kx8
EDI7F8512C
128Kx8
3E30114
EDI7F8512C120BSC
EDI7F8512C150BSC
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Untitled
Abstract: No abstract text available
Text: bq4842Y BENCHMARQ RTC Module With 128Kx8 NVSRAM Features General Description >• I n t e g r a t e d SR A M , r e a l - t i m e clock, C PU su p erv iso r, c ry sta l, p o w er-fail c o n tro l c irc u it, a n d b attery The bq4842Y RTC Module is a non
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bq4842Y
128Kx8
576-bit
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Untitled
Abstract: No abstract text available
Text: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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EDI88130CS
128Kx8
EDI88130CS
EDI88130LPS,
EDI88130CS55NB
EDI88130LPS55NB
EDI88130CS20TB
EDI88130LPS20TB
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Untitled
Abstract: No abstract text available
Text: M/HITE /M ICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25 to 45nS ■ Standard M icro circ u it Draw ing, 5962-93156 PIN CONFIGURATION TOP VIEW NCC A16C A14C A12 C A7 C A6 H A 5Ü A4 C A3 C A2 C A1C ADC i/ooC 1/01 □ 1/02C
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WS128K8-XCX
128Kx8
1/02C
MIL-STD-883
06HXX
07HXX
08HXX
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