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Rochester Electronics LLC MC908KX8CDWE IC MCU 8BIT 8KB FLASH 16SOIC
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DigiKey	MC908KX8CDWE	Bulk	2,030		37	1 - 10 - 100 $8.32 1000 $8.32 10000 $8.32	Buy Now
Rochester Electronics LLC MC908KX8MDWE IC MCU 8BIT 8KB FLASH 16SOIC
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DigiKey	MC908KX8MDWE	Bulk	1,866		33	1 - 10 - 100 $9.28 1000 $9.28 10000 $9.28	Buy Now
NXP Semiconductors MC908KX8CDWE IC MCU 8BIT 8KB FLASH 16SOIC
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DigiKey	MC908KX8CDWE	Tube	1,609		1	1 $10.19 10 $8.015 100 $10.19 1000 $10.19 10000 $10.19	Buy Now
Avnet Americas	MC908KX8CDWE	Tube			1,880	1 - 10 - 100 - 1000 - 10000 $7.0696	Buy Now
Newark	MC908KX8CDWE	Bulk			1,880	1 $8.5 10 $8.5 100 $8.5 1000 $8.5 10000 $8.5	Buy Now
Rochester Electronics	MC908KX8CDWE		2,738		1	1 $8 10 $8 100 $7.52 1000 $6.8 10000 $6.8	Buy Now
Avnet Silica	MC908KX8CDWE			54 Weeks	47	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	MC908KX8CDWE			54 Weeks	47	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	MC908KX8CDWE		4,783			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC MC68HC908KX8VP MICROCONTROLLER, 8 BIT, FLASH, H
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DigiKey	MC68HC908KX8VP	Bulk	55		55	1 - 10 - 100 $5.5 1000 $5.5 10000 $5.5	Buy Now
NXP Semiconductors MC908KX8CPE IC MCU 8BIT 8KB FLASH 16DIP
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DigiKey	MC908KX8CPE	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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8KX8 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility	Original	bq4010/bq4010Y 28-pin 10-year bq4010 536-bit	PDF
Untitled Abstract: No abstract text available Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy	OCR Scan	bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns	PDF
X76F641 Abstract: No abstract text available Text: ISO 7816 Compatible X76F641 64K 8Kx8+32x8 Secure SerialFlash FEATURES DESCRIPTION • 64-bit Password Security —Five 64-bit Passwords for Read, Program and Reset • 8192 Byte+32 Byte Password Protected Arrays —Seperate Read Passwords —Seperate Write Passwords	Original	X76F641 64-bit 32-bit 400kHz X76F641	PDF
C2665 Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666 Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)	Original	CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666	PDF
Untitled Abstract: No abstract text available Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility	Original	bq4010/bq4010Y bq4010 536-bit 28-pin 10-year	PDF
1202z Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3 Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883	OCR Scan	5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3	PDF
intel 29F Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568 Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256	OCR Scan	628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568	PDF
TC5564 Abstract: 8KX8-01 srm2064 8KX8-03 Text: Iksi i CMOS 8KX8-01 CMOS 8KX8-03 ^ n a •■ 64K CMOS STATIC RAM g -J 02 VVORD X 8 BIT In tegrated C irc u its In co rp o ra te d 10301 W i I lo w s R o a d m R edm ond, WA 98052 206 882-3100 TW X 910-443-2302 - f c . - FEATURES: □ □ □ □ □ □	OCR Scan	8KX8-01 8KX8-03 100ns TC5564 8KX8-01 srm2064 8KX8-03	PDF
Untitled Abstract: No abstract text available Text: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are	Original	TK89C668 DS015 8051microcontroller 64Kx8 P89C668	PDF
Untitled Abstract: No abstract text available Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy	OCR Scan	bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010	PDF
Untitled Abstract: No abstract text available Text: 3 bE D BENCHMARK MICROELEC fe j BENCHM ARQ _ _ • 1 3 ?f lû n 0 0 Q D 2 0 Q =1 ■ Advance Information bq3485 Real-Time Clock RTC With 8Kx8 RAM O Features General Description >■ Direct clock/calendar replacement for IBM AT-compatible computers and	OCR Scan	00QD20Q bq3485 bq3385R 24-hour PN-15 T-52-33-90 bq3485_	PDF
bq4010 Abstract: bq4010Y bq4010YMA-85N Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility	Original	bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N	PDF
Untitled Abstract: No abstract text available Text: pt// 8KX8 BASED Dense-Pac Microsystems, Inc. CMOS SRAM FAMILY DESCRIPTION: The Dense-Pac 8 K X 8 Based Family of Static Random Access M em ories SRAM , com plete w ith memory interface logic and on-board capacitors are available in the organizations and packages described below.	OCR Scan	DPS40128 DPS41129 DPS40192 DPS41193 DPS40256 DPS41257 DPS1124 128KX DPS91288 DPS8M628	PDF
Untitled Abstract: No abstract text available Text: 3bE BENCHMARK MICROELEC D • 13 7001=1 Advance Information BENCHMARQ D0G 02 D2 2 BiBEN' bq3487 Real-Time Clock Module With 8Kx8 RAM Features General Description ► Direct clock/calendar replacement for IBM AT-compatible computers and other applications	OCR Scan	bq3487 24-hour bq3387 137flfln bq3487_ BD-27	PDF

Untitled Abstract: No abstract text available Text: U631 H64 Software Controlled 8Kx8 nvSRAM □ Packages: P D IP 28 300 mil S O P28 (330 mil) Features □ H igh-perform ance C M O S non volatile static RAM 8192 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable A ccess T im es	OCR Scan		PDF
VCC3 1156 01 Abstract: VCC3 1156 Text: » I T T I O L O » _ S S S S S S GSM31P512KB-I66 256KB/512KB Modules s— Features Functional Description cont’d • • • • The GSM31P256KB-I66, and 256KB module, use GSI’s GS81132Q 32KX32 synchronous burst SRAM and a single 5V 8Kx8 SRAM for the tag. The GSM14P512K-I66, a	OCR Scan	GSM31P512KB-I66 256KB/512KB GSM31P256KB-I66, 256KB GS81132Q 32KX32 GSM14P512K-I66, 512KB GS82032Q 64KX32 VCC3 1156 01 VCC3 1156	PDF
Untitled Abstract: No abstract text available Text: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)	OCR Scan	EDI8810H/L ecEDI8810H/L 8810H/L	PDF
Untitled Abstract: No abstract text available Text: II High-Performance SKxS CMOS SRAM AS7CJ64 AS7CÎ64L 8Kx8 CMOS SRAM Common I/O FEATURES • Organization: 8,192 words x 8 bits Equal access and cycle times • High speed Very fast 3 ns output enable access time - 10/12/15/20/25 ns address access time Easy memory expansion with CE1, CE2, OE inputs	OCR Scan	AS7CJ64 28-pin	PDF
A7 SMD TRANSISTOR Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is	Original	HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor	PDF
Untitled Abstract: No abstract text available Text: 86 CY7C186 8Kx8 Static RAM Features provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers. The device has an automatic power-down feature (CE1), reducing the power consumption by over 80%	Original	CY7C186 CY7C186 600-mil-wide 32-pin	PDF
CS16LV40963 Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 8Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D	Original	32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D	PDF
EEPROM Abstract: 24LC65 24LC65-P 8Kx8 EEPROM Text: 970922 01 ELFA artikelnr. 73-656-38 24LC65/P 8kx8 EEPROM SIDA: 1/11 73-656-46 24LC65/SM 8kx8 EEPROM 970922 01 SIDA: 2/11 970922 01 SIDA: 3/11 970922 01 SIDA: 4/11 970922 01 SIDA: 5/11 970922 01 SIDA: 6/11 970922 01 SIDA: 7/11 970922 01 SIDA: 8/11 970922 01	Original	24LC65/P 24LC65/SM EEPROM 24LC65 24LC65-P 8Kx8 EEPROM	PDF
25C64li Abstract: 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 CAT25C64 25C64V Text: Not recommended for new designs, replace with CAT25640 CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power	Original	CAT25640 CAT25C64 64K-Bit CAT25C64 64-byte 25C64li 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 25C64V	PDF
25640 AN Abstract: 25640 AEC-Q100 CAT25640 MO-229 MS-001 Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is	Original	CAT25640 64-Kb CAT25640 64-byte MD-1128 25640 AN 25640 AEC-Q100 MO-229 MS-001	PDF

8KX8 Search Results

8KX8 Price and Stock

Rochester Electronics LLC MC908KX8CDWE

Rochester Electronics LLC MC908KX8MDWE

NXP Semiconductors MC908KX8CDWE

Rochester Electronics LLC MC68HC908KX8VP

NXP Semiconductors MC908KX8CPE

8KX8 Datasheets Context Search

Untitled

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X76F641

C2665

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1202z

intel 29F

TC5564

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bq4010

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VCC3 1156 01

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A7 SMD TRANSISTOR

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CS16LV40963

EEPROM

25C64li

25640 AN