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    64KX8 Search Results

    64KX8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15/B Rochester Electronics LLC X28C512 - EEPROM, 64KX8, Parallel, CMOS Visit Rochester Electronics LLC Buy
    X28C513JIZ-12 Rochester Electronics X28C513 - EEPROM, 64KX8, 5V, Parallel Visit Rochester Electronics Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    AM27C512-70JI Rochester Electronics LLC OTP ROM, 64KX8, 70ns, CMOS, PQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    64KX8 Price and Stock

    ROHM Semiconductor BR24G512FVT-5AE2

    EEPROM SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR24G512FVT-5AE2 Reel 3,000
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    • 10000 $0.561
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    ROHM Semiconductor BR25H512FVM-5ACTR

    EEPROM 512KBIT SERIAL EEPROM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BR25H512FVM-5ACTR Reel 3,000
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    • 10000 $0.74
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    64KX8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are


    Original     		PDF TK89C668 DS015 8051microcontroller 64Kx8 P89C668

    Untitled

    Abstract: No abstract text available
    Text: MX27C512 512K-BIT [64Kx8] CMOS EPROM FEATURES • • • • • • 64K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 45/55/70/90/100/120/150ns Totally static operation Completely TTL compatible • Operating current: 30mA


    Original     		PDF MX27C512 512K-BIT 64Kx8] 45/55/70/90/100/120/150ns 100uA MX27C512 512K-bit, MAR/02/2000

    KM68V512ALTE-10L

    Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
    Text: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.


    Original     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-sTSOP KM68V512ALTE-10L 64Kx8 CMOS RAM KM68U512ALE-L

    Untitled

    Abstract: No abstract text available
    Text: S PR512A SP 64Kx8 Bits Bus Flash Preliminary OCT. 01, 2003 Version 0.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.


    Original     		PDF SPR512A 64Kx8

    8512A

    Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP 23b27 8512A A12C A15C KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND

    static ram 64kx8

    Abstract: No abstract text available
    Text: m o EDI8M864C90/100/120/150 i High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate. The EDI8M864C has an on-board decoder circuit that


    OCR Scan     		PDF EDI8M864C90/100/120/150 64Kx8 EDI8M864C 32Kx8 MIL-STD-883C, EDI8M864C90/100/120/150 static ram 64kx8

    6755w

    Abstract: No abstract text available
    Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or­


    OCR Scan     		PDF FM27LV512L 288-Bit 64Kx8) FM27LV512 512Kbit, 150ns, 6755w

    Untitled

    Abstract: No abstract text available
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP DG23b27

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible


    OCR Scan     		PDF KM68512A 64Kx8 64Kx8 32-SOP, 32-TSOP 7Tb4142 525mil) 32-THlN

    27C512N

    Abstract: No abstract text available
    Text: I R C H I L D April 1998 S E M I C O N D U C T O R TM 524,288-Bit 64K FM27C512L 524,288-Bit (64Kx8 Low Power Fast EPROM • Programming V o lta g e +12.75V General Description ■ Typical programm ing time 50|is The FM27C512 is a low -pow er 512Kbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into


    OCR Scan     		PDF FM27C512L FM27C512L 288-Bit 64Kx8) FM27C512 512Kbit, 27C512 256Kb 27C512N

    M5M5512FP-70LL

    Abstract: SS12R 32P3H- E 1008BP-7QL
    Text: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)


    OCR Scan     		PDF M5MSS12P-45LL M5M5512FP-45UL 5512VP-45LL M5M5512RV-45LL 12KV-45LL S512KR-45LL M5M5512P-55U. M5M5512VP-55LL M5MS512RV-55UM5M55I2KV-55LL 12KR-5SLL M5M5512FP-70LL SS12R 32P3H- E 1008BP-7QL

    CAT71C256L-85

    Abstract: cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 CAT28F010 CAT28F512 4Q91
    Text: CATALYST SEMICONDUCTOR 1 Device fl CAT28F010 Temp Range » • OOOIB'ÌS Access Time ns Size (Organization) CS T Pkg Types # Pins (Max/Standby) 1 ■ T-90-30 Availability C 1MBit 120/150/200 30mA/100nA 32 P,N 4Q91 CAT28F512 C 512KBit <64Kx8) 200/250 50mA/500pA


    OCR Scan     		PDF T-90-30 CAT28F010 12SKx8) 30mA/100 CAT28F512 512KBit 64Kx8) 50mA/500pA CAT28F512V5 CAT71C256L-85 cat22c12 CAT27HC256 cerdip z PACKAGE lb2f 64KX16 CAT27C210 4Q91

    S634000

    Abstract: S63512 S63256
    Text: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8


    OCR Scan     		PDF S63256 256K/128K 32Kx8 S63512 64Kx8 S631000/S631001 S632000 S634000 512Kx8 0014GS4 S634000 S63512 S63256

    AS7C512-20JC

    Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
    Text: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O


    OCR Scan     		PDF AS7C512 AS7C512L 64Kx8 32-pin 7C256 7C1024 AS7C512-20JC AS7C512-15pc AS7C512 10n12 AS7C512-12JC AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20

    1N914

    Abstract: A14C N28B NM27C512 VA32A
    Text: Ju ly 1998 S E M IC O N D U C TD R tm FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Program ming Voltage +12.75V ■ Typical programm ing tim e 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-tim e-program m able (OTP) read-only memory (EPROM), or­


    OCR Scan     		PDF FM27LV512L 288-Bit 64Kx8) FM27LV512 512Kbit, 150ns, 512Kb 150ns 1N914 A14C N28B NM27C512 VA32A

    27C512N

    Abstract: No abstract text available
    Text: PRELIMINARY S E M I C O N D U C T O R TM FM27C512L 524,288-Bit 64Kx8 Low Power Fast EPROM General Description FM27C512L P A .P C H .L D • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into


    OCR Scan     		PDF FM27C512L FM27C512L 288-Bit 64Kx8) FM27C512 512Kbit, 256Kb 27C512N

    KM68U512ALE-L

    Abstract: KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6pm CMOS • Organization : 64Kx8 • Power Supply Voltage KM60V512A family : 3.3VKJ.3V KM68U512A family : 3.0V±0.3V


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 64Kx8 KM60V512A 32-SOP-525, 32-T30P1-0820F, 32-TSOP1-Q813 KM68V512A KM68U512ALE-L KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP

    ELL04

    Abstract: No abstract text available
    Text: Advance K M 6 8 V 5 1 2 B , K M 6 8 U 5 1 2 B Fami l y D o c u m e n t CMOS SRAM liti 64Kx8 bit Low Power and Low Voltage C M O S Static RAM R evisio n No. H is to ry D raft Data D esign ta rg e t N o ve m b e r 25th 1997 Remark A dvance T h e attached da ta she ets are prepared and a p p ro ve d by S A M S U N G E lectronics. S A M S U N G E lectro nics C O ., LTD. re se rve the


    OCR Scan     		PDF 64Kx8 68V512B ELL04

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    D28F512

    Abstract: flash eeprom D28F010
    Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent


    OCR Scan     		PDF D28F512 D28F010 MC48F512 MC48F010 64KX8 48F512 48F010 48F010 1024K flash eeprom

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • P ro ces s T e c h n o lo g y : 0 .6 um C M O S T h e K M 6 8 5 1 2 A fa m ily is fa b ric a te d by S A M S U N G 'S • O rg a n iz a tio n : 6 4 K x 8


    OCR Scan     		PDF KM68512A 64Kx8

    KM23C512

    Abstract: No abstract text available
    Text: KM23C512 G CMOS MASK ROM 512K-Bit (64Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C512: 28 pln DIP (Polarity programmable chip enable pin and output enable pin) • KM23C512G: 32-pln SOP (Polarity programmable chip enable pin and output enable pin)


    OCR Scan     		PDF KM23C512 512K-Bit 64Kx8) KM23C512: KM23C512G: 32-pln 120ns 100pA

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000