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    MT42C4064 Price and Stock

    Micron Technology Inc MT42C4064-12

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    HT Micron Semiconductors MT42C4064Z-12

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    Micron Technology Inc MT42C40642-10

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    Micron Technology Inc MT42C4064Z-10

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    Others MT42C4064-12

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    MT42C4064 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT42C4064 Micron 64kx4 dram with 256x4 sam Scan PDF
    MT42C4064C-10 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-10 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-10/883C Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-12 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-12 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-12/883C Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-15 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-15 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064C-15/883C Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064EC-10 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064EC-10/883C Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064EC-12 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064EC-12/883C Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064EC-15 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064EC-15/883C Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064Z-10 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064Z-12 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF
    MT42C4064Z-15 Micron 64K x 4 DRAM WITH 256 x 4 SAM Scan PDF

    MT42C4064 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: |U |IC R O N MT42C4064 VRAM 64Kx4 DRAM WITH 256 X 4 SAM • • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


    OCR Scan     		MT42C4064 64Kx4 256-cycle 250mW 100ns PDF

    MT42C4064

    Abstract: 0041478 mt4067 MT42
    Text: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10


    OCR Scan     		MT42C4064 MIL-STD-883, 256-cycle 250mW MIL-STD-883 0041478 mt4067 MT42 PDF

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v PDF

    Untitled

    Abstract: No abstract text available
    Text: IC R 1 MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP (D- 11 ) sci [ FEATURES • • • • • • • • • • • • • 1 *


    OCR Scan     		MT42C4064 MIL-STD-883, 24L/400 256-cycle MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •


    OCR Scan     		000177b MT42C4064 24L/400 VcqC12 MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: r AU ST IN S E M I C O N D U C T O R INC bGE ]> TÜQ2117 DGODITM T77 « A U S T MT42C4064 883C 64K X 4 VRAM M I C R O N . T - '- l f c - 'î - V Z û MILITARY VRAM 64K X 4 DRAM WITH 256 X 4 SAM PIN ASSIGNMENT Top View • MIL-STD-883, Class B 24-Pin DIP


    OCR Scan     		Q2117 MT42C4064 MIL-STD-883, 24-Pin MIL-STD-883 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    64kx4 DRAM

    Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
    Text: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process


    OCR Scan     		64Kx4 256-cycle 250mW 100ns 100ns, 120ns, 150ns, T-46-23-37 64kx4 DRAM marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24 PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON MT42C8127 VRAM 128Kx8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


    OCR Scan     		MT42C8127 512-cycle 275mW 100ns 128Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply


    OCR Scan     		512-cvde 275mW 100ns 40-Png MT42C8127 PDF

    Untitled

    Abstract: No abstract text available
    Text: I^IICRON MT42C4255 VRAM 256K X 4 DRAM WITH 512x4 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


    OCR Scan     		MT42C4255 512x4 512-cycle 275mW 28-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON MT42C4256 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89497, Class M • JAN 5962-89497, Class B • MIL-STD-883, Class B 28L/400 CDIP SC [ 1 SDQ1 [ 2 FEATURES • • • • • • • • • •


    OCR Scan     		MT42C4256 MIL-STD-883, 28L/400 512-cycle Low883C MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply


    OCR Scan     		G0G2S72 128Kx8 512-cycle 275mW 100ns 40-Pin GQ02bQ4 PDF

    SP 1191

    Abstract: MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55
    Text: JAM 2 8 M IC R O N • MT42C4255 IICHNOKX.Y »NC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


    OCR Scan     		MT42C4255 512x4 512-cycle 275mW SP 1191 MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55 PDF

    MAS 10 RCD

    Abstract: 42c4255 fast page mode dram controller MT4C4256 vram dual port MT42C4064 SCD-026
    Text: CR M T42C 4255 VRAM 256K X 4 DRAM WITH 512 X 4 SAM • • • • • • • • • • • In d u stry sta n d ard p inout, tim in g a n d functions H ig h perform ance CM OS silicon gate process Single +5V ±10% p o w e r su p p ly In p u ts a n d o u tp u ts are fully TTL a n d CMOS


    OCR Scan     		MT42C4255 512-cycle 275mW MAS 10 RCD 42c4255 fast page mode dram controller MT4C4256 vram dual port MT42C4064 SCD-026 PDF

    Altra SAM

    Abstract: SF 338 cwo JAGR
    Text: MICRON TECHNOLOGY INC IME D t l l l S M I DQDllfl? S PRELIM IN A R Y T -% -2 3 -3 1 VRAM 128K X 8 DRAM with 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pin-out tim ing, an d functions H igh perform ance CMOS silicon gate process


    OCR Scan     		200mW 40-Pi0 T-46-23-37 VALI00 Altra SAM SF 338 cwo JAGR PDF

    Untitled

    Abstract: No abstract text available
    Text: •.'MICRON T E C H N O L O G Y INC 3ÔE » bl11541 GDO^bOb 4 ■ ■ FIRN PRELIMINARY 7 ^ -2 3 -3 7 VRAM 128K X 8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High-performance CMOS silicon gate process


    OCR Scan     		bl11541 275mW 512-cycle T-46-23-37 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOL OGY INC 17E D biiisMT aooiôoa t • ADVANCE RON MT42C4256 883C MILITARY VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • Industry standard pin-out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply


    OCR Scan     		MT42C4256 100ns MT42C4064 64Kx4) 28L/400 PDF

    MAS 10 RCD

    Abstract: SMA marking code LG fast page mode dram controller MT42C4064 MT4C4256
    Text: M T 42C 8127 C Z F 3 0 IM 128K X 8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • In d u stry sta n d a rd p in o u t, tim ing a n d functions H igh perform ance CMOS silicon gate process Single +5V ±10% p o w e r su p p ly In p u ts a n d o u tp u ts are fully TTL a n d CMOS


    OCR Scan     		MT42C8127 512-cycle 275mW 100ns MAS 10 RCD SMA marking code LG fast page mode dram controller MT42C4064 MT4C4256 PDF

    MAS 10 RCD

    Abstract: marking CODE 7Ls Model MAS 10 RCD marking 7Ls W42C MT42C4064 MT4C4256 circuit diagram of o general split ac
    Text: .¡AN a a ¡991 MICRON • M T42C8127 I t CMHOt OCT ML 128K x8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply


    OCR Scan     		MT42C8127 128Kx8 512-cvcle 275mW 100ns MAS 10 RCD marking CODE 7Ls Model MAS 10 RCD marking 7Ls W42C MT42C4064 MT4C4256 circuit diagram of o general split ac PDF

    Untitled

    Abstract: No abstract text available
    Text: 3flE D M I CR ON T E C H N O L O G Y INC '• blllS^ 0 0 0 2 5 3 b *î « U R N PRELIMINARY ■TN¿Éfi- nfr ftM-^il- < T -% -2 3 -3 7 VRAM 256K X 4 DRAM WITH 512 X 4 SAM • • • • « • • • • • • Industry standard pinout, timing and functions


    OCR Scan     		000253b 512-cycle 275mW PDF

    Untitled

    Abstract: No abstract text available
    Text: JM 2 8 W9i MICRON • MT42C4255 IIC H N O K X .Y INC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply


    OCR Scan     		MT42C4255 512-cyde 275mW 100ns PDF

    MT42C4064

    Abstract: No abstract text available
    Text: MICRO N T E C H N O L O G Y INC 5SE D • D G 0 5 7 b b Mñb H M R N UiT42C4064 883C 1 Ô4K x 4 VRAM 1 |W |iC = R O S ! MILITARY VRAM 64K x 4 DRAM WITH 256 x 4 SAM PIN ASSIGNMENT (Top View • MIL-STD-883, Class B 24-Pin DIP (D-11) FEATURES • • •


    OCR Scan     		UiT42C4064 MIL-STD-883, 24-Pin MIL-STD-883 WT4SC4064 MT42C4064 PDF