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    10N12 Search Results

    10N12 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TRS10N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    RJMG2210N1230PR Amphenol Communications Solutions RJMG 2x1 1000 base-T, with led Visit Amphenol Communications Solutions
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    10N12 Price and Stock

    Infineon Technologies AG IPD110N12N3GATMA1

    MOSFET N-CH 120V 75A TO252-3
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    DigiKey IPD110N12N3GATMA1 Cut Tape 6,947 1
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    IPD110N12N3GATMA1 Digi-Reel 6,947 1
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    IPD110N12N3GATMA1 Reel 2,500 2,500
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    Avnet Americas IPD110N12N3GATMA1 Ammo Pack 19 Weeks 1
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    Mouser Electronics IPD110N12N3GATMA1 22,161
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    Newark IPD110N12N3GATMA1 Cut Tape 3,322 1
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    Bristol Electronics IPD110N12N3GATMA1 1,890
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    Rochester Electronics IPD110N12N3GATMA1 5,242 1
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    Ameya Holding Limited IPD110N12N3GATMA1 2,410
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    Chip One Stop IPD110N12N3GATMA1 Cut Tape 10,396 0 Weeks, 1 Days 1
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    EBV Elektronik IPD110N12N3GATMA1 17 Weeks 2,500
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    Vyrian IPD110N12N3GATMA1 14,191
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    Win Source Electronics IPD110N12N3GATMA1 16,670
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    Infineon Technologies AG ISC110N12NM6ATMA1

    TRENCH >=100V
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    DigiKey ISC110N12NM6ATMA1 Cut Tape 4,721 1
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    ISC110N12NM6ATMA1 Digi-Reel 4,721 1
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    Mouser Electronics ISC110N12NM6ATMA1 2,363
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    Newark ISC110N12NM6ATMA1 Cut Tape 4,980 1
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    STMicroelectronics SCTWA10N120

    IC POWER MOSFET 1200V HIP247
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    DigiKey SCTWA10N120 Tube 499 1
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    STMicroelectronics SCTWA10N120 10 1
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    Avnet Silica SCTWA10N120 53 Weeks 30
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    Chip One Stop SCTWA10N120 Bulk 113 0 Weeks, 1 Days 1
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    EBV Elektronik SCTWA10N120 53 Weeks 30
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    IXYS Corporation IXYN110N120C4

    IGBT 1200V 110A GEN4 XPT SOT227B
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    DigiKey IXYN110N120C4 Tube 296 1
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    Mouser Electronics IXYN110N120C4 150
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    IXYS Corporation IXYK110N120B4

    IGBT 1200V 340A TO-264
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    DigiKey IXYK110N120B4 Tube 268 1
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    Mouser Electronics IXYK110N120B4 161
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    10N12 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N12 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10N12 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10N12L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10N12L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10N12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O


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    10N120AU1 O-247 25oCto150 -100/ps; PDF

    10N120AU1

    Abstract: 10n120
    Text: PIXYS IGBT with Diode IXSH 10N120AU1 U = 2 0 A VCES = 1200 V VCE sa„ = 4.0 V Short Circuit SOA Capability Symbol Test C onditions VCES V *C G R ^ = 25°C to 150°C T,J = 25°C to 150°C; FL.= 1 Mi2 C3E v v GEH Continuous T ransient ^C90 'c Tc = 25°C Tc = 90°C


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    10N120AU1 -100/ps; 00A/MS 10N120AU1 10n120 PDF

    10N120BND

    Abstract: 10n120bnd equivalent
    Text: 10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best


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    HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 1-800-4-HARRIS 10N120BND 10n120bnd equivalent PDF

    10N120BN

    Abstract: No abstract text available
    Text: 10N120BN, 10N120BN, 10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


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    HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN PDF

    10n120

    Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
    Text: MOTOROLA Order this document by 10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module 10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp


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    MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 10n120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120 PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    TP10N15L

    Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
    Text: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS


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    1X440 TQ-204AA 21A-04 O-220AB TP10N15L 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC PDF

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


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    O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1 PDF

    10N120BN

    Abstract: G10N120BN ta49290 T0263AB
    Text: 10N120BN, 10N120BN, 10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


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    HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN G10N120BN ta49290 T0263AB PDF

    10n capacitor

    Abstract: 10n05 10n12 10N241 powersystems 10N-2410 100uF-50V
    Text: DC/DC Converter TSI-10N Series 10 Watt Features Step-down Switching Regulator with very high Efficiency Adjustable Output 1.8 – 3.3 VDC or 3.0 – 5.0 VDC Remote ON/OFF Overload Protection Low Output Noise Standby Current only 100 µA Small SIL-Package 2 Year Product Warranty


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    TSI-10N F/50V F/10V F-200 10N-xx10 10N-xx11 CH-8002 10n capacitor 10n05 10n12 10N241 powersystems 10N-2410 100uF-50V PDF

    10n capacitor

    Abstract: 10N241 TSI 10N-0510D
    Text: DC/DC Converter TSI-10N Series 10 Watt Features Step-down Switching Regulator with very high Efficiency Adjustable Output 1.8 – 3.3 VDC or 3.0 – 5.0 VDC Remote ON/OFF Overload Protection Low Output Noise Standby Current only 100 µA Small SIL- or DIL-Package


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    TSI-10N F/50V F/10V F-200 10N-xx10 10N-xx11 CH-8002 10n capacitor 10N241 TSI 10N-0510D PDF

    MTP8P20

    Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12
    Text: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)


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    MTP7N18 T0-220AB MTP7N20 O-220AB MTP7P05 MTP7P06 MTP10NI5 MTP8P20 MTP10N10M MTP8N18 MTP8N08 MTP8N10 MTP8N12 PDF

    10n12

    Abstract: No abstract text available
    Text: 2.5V/3.3/5V 2.5GHz 1:4 PECL/ECL CLOCK DRIVER WITH 2:1 DIFFERENTIAL INPUT MUX FEATURES DESCRIPTION • Guaranteed AC parameters over temp/voltage: • > 2.5GHz fMAX • < 25ps within-device skew • < 225ps tr/tf time • < 450ps prop delay ■ Low jitter design:


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    225ps 450ps 16-pin SY89830U 25psFigure SY89830U K4-16-1) 10n12 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 PDF

    10N120BN

    Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS
    Text: 10N120BN, 10N120BN, 10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


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    HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 PDF

    HGTG10N120BND

    Abstract: 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR
    Text: 10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    Original
    HGTG10N120BND HGTG10N120BND TA49290. TA49189. 140ns 150oC 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT 10N120A IC25 v C ES V CE sat SCSO A Capability Maximum Ratings Symbol Test Conditions VCES VcO R Tj = 25“C to 150°C Tj = 25°C to 150°C; R aE = 1 MQ V v GEM Continuous Transient 'e» T c = 25°C T c = 90°C Tc = 25“C, 1 ms SSOA (RBSOA) V GE = 15 V, Tj= 125°C, Rq = 150 i l


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    IXSH10N120A O-247 PDF

    10N120BND

    Abstract: mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238
    Text: 10N120BND Semiconductor D a ta S h e e t J a n u a ry 1999 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best


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    HGTG10N120BND HGTG10N120BND TA49290. TA49189. 1-800-4-HARRIS 10N120BND mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238 PDF

    10N15L

    Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
    Text: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h


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    21A-04 O-220AB 10N15L 10N12L mtp10n12 MTM10N15L p10n15l PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


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    T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1 PDF