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onsemi FCD380N60E MOSFET N-CH 600V 10.2A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCD380N60E	Cut Tape	6,700		1	1 $2.53 10 $1.728 100 $2.53 1000 $0.982 10000 $0.982	Buy Now
	FCD380N60E	Digi-Reel	6,700		1	1 $2.53 10 $1.728 100 $2.53 1000 $0.982 10000 $0.982	Buy Now
	FCD380N60E	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.982	Buy Now
Avnet Americas	FCD380N60E	Reel	2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.93524	Buy Now
	FCD380N60E	Ammo Pack		53 Weeks, 4 Days	1	1 $2.43 10 $2.02 100 $1.45 1000 $1.45 10000 $1.45	Buy Now
Mouser Electronics	FCD380N60E		7,816			1 $1.87 10 $1.51 100 $1.25 1000 $0.982 10000 $0.982	Buy Now
Newark	FCD380N60E	Cut Tape	2,500		1	1 $2.43 10 $2.02 100 $1.45 1000 $1.45 10000 $1.45	Buy Now
Richardson RFPD	FCD380N60E				2,500	1 - 10 - 100 - 1000 - 10000 $0.98	Buy Now

Avnet Asia	FCD380N60E			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.00718	Buy Now
Avnet Silica	FCD380N60E			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	FCD380N60E	Cut Tape	730			1 $2.33 10 $1.93 100 $1.39 1000 $1.08 10000 $1.08	Buy Now
EBV Elektronik	FCD380N60E			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHH080N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHH080N60E-T1-GE3	Cut Tape	6,102		1	1 $5.93 10 $3.969 100 $5.93 1000 $2.30125 10000 $2.30125	Buy Now
	SIHH080N60E-T1-GE3	Digi-Reel	6,102		1	1 $5.93 10 $3.969 100 $5.93 1000 $2.30125 10000 $2.30125	Buy Now
	SIHH080N60E-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $2.30125	Buy Now
Vishay Siliconix SIHD180N60E-GE3 MOSFET N-CH 600V 19A TO252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHD180N60E-GE3	Tube	2,857		1	1 $3.08 10 $2.022 100 $3.08 1000 $1.28876 10000 $1.28876	Buy Now
New Advantage Corporation	SIHD180N60E-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $1.74	Buy Now
PanJit Group PJMF580N60E1_T0_00001 600V SUPER JUNCITON MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJMF580N60E1_T0_00001	Tube	1,956		1	1 $1.83 10 $1.83 100 $1.83 1000 $0.66506 10000 $0.62	Buy Now
onsemi FCPF380N60E MOSFET N-CH 600V 10.2A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCPF380N60E	Tube	1,945		1	1 $3.03 10 $2.085 100 $3.03 1000 $1.2445 10000 $1.2445	Buy Now
Avnet Americas	FCPF380N60E	Tube		17 Weeks	1,000	1 - 10 - 100 - 1000 $1.21415 10000 $1.17129	Buy Now
Mouser Electronics	FCPF380N60E		1,821			1 $1.74 10 $1.37 100 $1.27 1000 $1.24 10000 $1.22	Buy Now
Rochester Electronics	FCPF380N60E		11		1	1 $1.38 10 $1.38 100 $1.3 1000 $1.17 10000 $1.17	Buy Now
TME	FCPF380N60E		508			1 - 10 - 100 - 1000 - 10000 -	Buy Now

Richardson RFPD	FCPF380N60E				1,000	1 - 10 - 100 - 1000 $1.24 10000 $1.24	Buy Now
Avnet Silica	FCPF380N60E			18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FCPF380N60E			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FCPF380N60E		107,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FCPF380N60E					1 - 10 - 100 $2.02 1000 $1.37 10000 $1.37	Buy Now
Wuhan P&S	FCPF380N60E		122		1	1 $3.48 10 $3.48 100 $2.22 1000 $1.68 10000 $1.68	Buy Now

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80N60 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
80N60B		IXYS			Original	PDF

80N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
80n60 Abstract: 80N60B ixsk 80n60b Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.2 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	PDF	80N60B 247TM PLUS247TM 80n60 ixsk 80n60b
80n60 Abstract: 80N60B Text: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30	Original	PDF	80N60B 247TM 728B1 80n60 80N60B
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 180 A = 2.5 V VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600	Original	PDF	80N60B
Untitled Abstract: No abstract text available Text: High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 = 600 V = 160 A = 2.5 V VCE sat Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30	Original	PDF	80N60B 247TM 728B1
80n60 Abstract: O M 335 80N60B PF650 Text: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A	Original	PDF	80N60BD1 OT-227 728B1 80n60 O M 335 80N60B PF650
80n60 Abstract: 80N60BD1 2X6-10 IXSN80N60BD1 2X61-06A Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	80N60BD1 2x61-06A 065B1 728B1 123B1 728B1 80n60 2X6-10 IXSN80N60BD1 2X61-06A
80n60 Abstract: Siemens DIODE E 1240 80N60B 60-06A 6006A Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	80N60BD1 0-06A 728B1 123B1 728B1 065B1 80n60 Siemens DIODE E 1240 80N60B 60-06A 6006A
Untitled Abstract: No abstract text available Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient	Original	PDF	80N60AU1 OT-227 E153432
Siemens DIODE E 1240 Abstract: No abstract text available Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	80N60BD1 0-06A 728B1 123B1 065B1 Siemens DIODE E 1240
IXGN80n60 Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16 Text: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	80N60A2 80N60A2D1 IC110 IF110 OT-227B, E153432 IXGN80N60A2D1 065B1 728B1 123B1 IXGN80n60 IF110 high current igbt SOT227B IXGN80N60A2 123B16
Untitled Abstract: No abstract text available Text: High Current IGBT IXSK 80N60B VCES = 600 V IXSX 80N60B IC25 = 180 A Short Circuit SOA Capability VCE sat = 2.3 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VCES VGEM	Original	PDF	80N60B 247TM PLUS247TM
80n60 Abstract: IXSN80N60AU1 Text: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	80N60AU1 OT-227 E153432 80n60 IXSN80N60AU1
Untitled Abstract: No abstract text available Text: IXSN 80N60BD1 Symbol Test Conditions g fs IC = 60 A; VCE = 10 V, Note1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. 40 52 S 6600 pF 660 pF C res 196 pF Qg 240 nC 85 nC 90 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V, L = 100 µH,	Original	PDF	80N60BD1 OT-227 728B1
Untitled Abstract: No abstract text available Text: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E Symbol Test Conditions V CES TJ = 25°C to 150°C E Maximum Ratings 600 miniBLOC, SOT-227 B E153432 E V G V CGR	Original	PDF	80N60BD1 OT-227 E153432 2x61-06A 065B1 728B1 123B1 728B1

diode lt 429 Abstract: 7V03 lts 542 Text: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A	OCR Scan	PDF	80N60AU1 OT-227 E153432 diode lt 429 7V03 lts 542
dc servo igbt Abstract: No abstract text available Text: n i x Y S IGBT with Diode IXSN 80N60AU1 VCES I C25 vv CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary data Symbol Maximum Ratings Test Conditions v CES T j = 25° C to 150° C 600 V vt c g r T j = 25° C to 150° C; RG6 = 1 M£2 600 A V G ES	OCR Scan	PDF	80N60AU1 OT-227 E153432 dc servo igbt
Untitled Abstract: No abstract text available Text: : IXYS Prelim inary Data IXSN 80N60A High Current IGBT V ces = ^C25 = 600 V 160 A 3 V ^ C E s a t = Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj = 25 °C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE= 1 600 A v GES Continuous	OCR Scan	PDF	80N60A
80N60A Abstract: No abstract text available Text: IXGK 80N60A vCES HiPerFAST IGBT ^C25 v* CE sat t,; 600 V 80 A 2.7 V 275 ns Preliminary data Symbol v ces V Co „ Maximum Ratings Test Conditions T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RQE = 1 MS2 600 V Continuous ±20 V v*G E M T ransient ±30	OCR Scan	PDF	80N60A O-264
Untitled Abstract: No abstract text available Text: nixYS IGBT with Diode IXSN 80N60AU1 V CES = 600 V I = 160 A = 3 V C25 v CE sat Combi Pack Short Circuit SOA Capability Preliminary data Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGH Tj = 25°C to 150°C; RGE = 1 M n 600 A V GES Continuous	OCR Scan	PDF	80N60AU1 OT-227 E153432 4bflb22b
80N60AU1 Abstract: IXYS IGBT Text: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings	OCR Scan	PDF	80N60AU1 OT-227 E153432 80N60AU1 IXYS IGBT
80N60A Abstract: No abstract text available Text: n ix Y S IXSN 80N60A High Current IGBT VCES IC25 vw CE sat 600 V 160 A 3V Short Circuit SOA Capability Preliminary Data Symbol Test C onditions v’ c e s T j =25°C to150°C 600 V VC0R Tj = 25° C to 150° C; RG6 = 1 Mi2 600 A v GES Continuous ±20 V VGEM	OCR Scan	PDF	80N60A to150 OT-227B,
1xys Abstract: E153432 80N60A 80n60 Text: High Current IGBT 600 V 160 A 3V IXSN 80N60A YCES IC25 VCE sat Short Circuit SO A Capability Preliminary Data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 600 V 1, = 25°C to 150°C; RGE = 1 M n 600 A Maximum Ratings v GES v GEM Continuous ±20	OCR Scan	PDF	80N60A OT-227B, 80N60AU1 1xys E153432 80n60
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

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onsemi FCD380N60E

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PanJit Group PJMF580N60E1_T0_00001

onsemi FCPF380N60E

80N60 Datasheets (1)

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80n60

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80n60

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Siemens DIODE E 1240

IXGN80n60

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diode lt 429

dc servo igbt

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80N60A

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80N60AU1

80N60A

1xys

B1116

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