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    IXGN80N60 Search Results

    IXGN80N60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGN80N60A2 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 160A SOT-227B Original PDF
    IXGN80N60A2D1 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 160A FRD SOT-227B Original PDF

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    IXGN80n60

    Abstract: IF110 high current igbt SOT227B IXGN80N60A2 123B16
    Text: Advanced Technical Data IXGN 80N60A2 IXGN 80N60A2D1 IGBT Optimized for Switching up to 5 kHz E Symbol Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 80N60A2 80N60A2D1 IC110 IF110 OT-227B, E153432 IXGN80N60A2D1 065B1 728B1 123B1 IXGN80n60 IF110 high current igbt SOT227B IXGN80N60A2 123B16