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Vishay Siliconix SIHP38N60E-GE3 MOSFET N-CH 600V 43A TO220AB
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DigiKey	SIHP38N60E-GE3	Tube	915		1	1 $6.23 10 $6.23 100 $6.23 1000 $6.23 10000 $6.23	Buy Now
IXYS Corporation IXGH38N60 IGBT 600V 76A 200W TO247AD
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IXYS Corporation IXGH38N60U1 IGBT 600V 76A 200W TO247AD
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NXP Semiconductors N74F38N,602 IC GATE NAND 4CH 2-INP 14DIP
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Rochester Electronics	N74F38N,602		3,517		1	1 $0.3683 10 $0.3683 100 $0.3462 1000 $0.3131 10000 $0.3131	Buy Now
Rochester Electronics LLC N74F38N,602 IC GATE NAND 4CH 2-INP 14DIP
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DigiKey	N74F38N,602	Tube			784	1 - 10 - 100 - 1000 $0.38 10000 $0.38	Buy Now

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38N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
robot control Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT with Diode IXGH 38N60U1 VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V Combi Pack Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient	Original	PDF	38N60U1 O-247 robot control
38N60 Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT IXGH 38N60 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 76 A IC90 T C = 90°C	Original	PDF	38N60 O-247 38N60
38N60U1 Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT with Diode IXGH 38N60U1 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 600 V = 76 A = 1.8 V Combi Pack Advanced Technical Information Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	38N60U1 O-247 38N60U1
robot control Abstract: servo motors MJ800 Text: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 76 A I C90 TC = 90°C 38 A I CM TC = 25°C, 1 ms	Original	PDF	38N60 O-247 robot control servo motors MJ800
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
38N60 Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT IXGH 38N60 VCES IC25 v CE(sat) Symbol Test Conditions VCES T, = 25°C to 150°C 600 V v CGR T. = 25°C to 150°C; RGE = 1 600 V v Ges Continuous ±20 V v GEM Transient ±30 V Maximum Ratings 'c * Tc = 25°C 76 A ' c 90 Tc = 90°C 38	OCR Scan	PDF	38N60 O-247 B2-83 38N60
Untitled Abstract: No abstract text available Text: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C	OCR Scan	PDF	38N60U1 O-247 B2-85
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a
38N60 Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms	OCR Scan	PDF	38N60 O-247 4bflb22b 38N60
S1443 Abstract: UPS es 700 j3076 Text: Ultra-Low V IG B T IXGH 38N60 VCES 'c25 = 600 V = 76 A V CE sa„ = 1 -8 V & Symbol Test C onditions V CES T j =25°C to150°C Vca* T, vQES v GEM ^C25 ^C90 Maximum Ratings 600 V 600 V Continuous ±20 V Transient +J30 V Tc = 2 5 'C 76 A Tc =90°C 38 A 152 A	OCR Scan	PDF	38N60 to150 O-247AD O-247 S1443 UPS es 700 j3076
Untitled Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT with Diode IXGH 38N60U1 VCES IC25 v CE(sat) = 600 V = 76 A = 1.8 V ?c Combi Pack G O E Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR ^ = 25°C to 150°C; RGE = 1 Mn 600 V Maximum Ratings VGES Continuous ±20 V v Transient	OCR Scan	PDF	38N60U1 O-247 40A/ns
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	PDF	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
40n80 Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	PDF	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
12n60u Abstract: sta 750 tic 263a Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH	OCR Scan	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	PDF	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50

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38N60 Search Results

38N60 Price and Stock

Vishay Siliconix SIHP38N60E-GE3

IXYS Corporation IXGH38N60

IXYS Corporation IXGH38N60U1

NXP Semiconductors N74F38N,602

Rochester Electronics LLC N74F38N,602

38N60 Datasheets Context Search

robot control

38N60

38N60U1

robot control

200n60

7n60b

38N60

Untitled

ixgh 1500

38N60

S1443

Untitled

7N60B

40n80

120n60b

8n80

40n80

mm036

12n60u

DSE 130 -06A