12N60C Search Results
12N60C Price and Stock
Rochester Electronics LLC FQP12N60CPOWER FIELD-EFFECT TRANSISTOR, 1 |
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FQP12N60C | Bulk | 4,340 | 176 |
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Rochester Electronics LLC FQI12N60CTUMOSFET N-CH 600V 12A I2PAK |
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FQI12N60CTU | Tube | 2,882 | 226 |
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Rochester Electronics LLC HGTP12N60C3RIGBT 600V 24A TO-220-3 |
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HGTP12N60C3R | Bulk | 2,724 | 195 |
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Rochester Electronics LLC HGT1S12N60C3DIGBT 600V 24A TO-262 |
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HGT1S12N60C3D | Bulk | 2,637 | 185 |
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Rochester Electronics LLC HGT1S12N60C3S9AR450127A, 600V, UFS N-CHANNEL IGBT |
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HGT1S12N60C3S9AR4501 | Bulk | 2,400 | 202 |
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12N60C Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| 12N60C3 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
| 12N60C3D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
| 12N60C3D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | |||
| 12N60CD1 |
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HiPerFAST IGBT Lightspeed | Original |
12N60C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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12n60c
Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
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12N60C O-263 O-220 728B1 transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C | |
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Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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12N60C ISOPLUS247TM | |
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Contextual Info: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i |
OCR Scan |
12N60CD1 | |
12N60CD1Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 |
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12N60CD1 12N60CD1 O-263 O-220 | |
12N60CContextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms |
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12N60C O-247 O-247 12N60C | |
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Contextual Info: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 |
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12N60C O-263 O-220 728B1 | |
12N60CD1
Abstract: 12n60c
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12N60CD1 728B1 12N60CD1 12n60c | |
IXGA 12N60CContextual Info: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM |
OCR Scan |
12N60C 12N60C O-263 O-220 IXGA 12N60C | |
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Contextual Info: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES |
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12N60C ISOPLUS247TM 728B1 | |
12n60c
Abstract: transistor 12n60c 98503B 12N60
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12N60C O-247 728B1 12n60c transistor 12n60c 98503B 12N60 | |
IGBT g
Abstract: TO263AA
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12N60CD1 12N60CD1 O-220 O-263 IGBT g TO263AA | |
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Contextual Info: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ |
OCR Scan |
12N60C to150 O-220 O-263 | |
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Contextual Info: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 15 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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ISOPLUS247TM 12N60C E153432 | |
12N60CD1
Abstract: IGBT g 12N60CD
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12N60CD1 O-263 with055 12N60CD1 IGBT g 12N60CD | |
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12n60c
Abstract: transistor 12n60c ISOPLUS247
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12N60C ISOPLUS247TM 728B1 12n60c transistor 12n60c ISOPLUS247 | |
C25 diode
Abstract: GE 0270
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OCR Scan |
12N60CD1 12N60CD1 O-220 O-263 C25 diode GE 0270 | |
IXGH 12N60CD1
Abstract: IXGH12N60CD1 12N60CD1
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12N60CD1 O-247 IXGH 12N60CD1 IXGH12N60CD1 12N60CD1 | |
12N60CD1Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES IC25 = = = = VCE sat tfi(typ) 600 V 24 A 2.1 V 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous |
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12N60CD1 O-247 12N60CD1 | |
12n60c
Abstract: IXGC 12N60C transistor 12n60c IXGA12N60C IXGC12N60CD1 12N60CD1
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12N60C 12N60CD1 ISOPLUS247TM 15FRED) IXGC12N60CD1 728B1 123B1 728B1 065B1 12n60c IXGC 12N60C transistor 12n60c IXGA12N60C 12N60CD1 | |
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Contextual Info: □ IXYS Advanced Technical Information H iP e r F A S T IG B T L ig h t s p e e d ™ S e r ie s IXGH 12N60CD1 Symbol TestC onditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 |
OCR Scan |
12N60CD1 O-247 | |
IXGC 12N60C
Abstract: 12N60C
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ISOPLUS247TM 12N60C 12N60CD1 ISOPLUS220TM E153432 728B1 123B1 065B1 IXGC 12N60C | |
12n60c
Abstract: 12N60
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ISOPLUS247TM 12N60C 12N60CD1 ISOPLUS220TM 728B1 123B1 065B1 12N60 | |
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Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
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12N60CD1 O-263 728B1 | |
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Contextual Info: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A |
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12N60CD1 O-247 | |