HY62U8512
Abstract: HY62U8512LLST-I HY62U8512-I dec97 64Kx8bit
Text: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 64,000 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed
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HY62U8512-
64Kx8bit
HY62U8512/HY62U8512-I
HY62U8512
HY62U8512-I
32pin
-100mA
100mA
HY62U8512LLST-I
dec97
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hy62u8512
Abstract: No abstract text available
Text: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 65,536 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed
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HY62U8512-
64Kx8bit
HY62U8512/HY62U8512-I
HY62U8512
HY62U8512-I
32pin
-100mA
100mA
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V29LC51000 512 KILOBIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ The V29LC51000 is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply.
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V29LC51000
64Kx8-bit
32-pin
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BD 2135
Abstract: XT132 P8377 OTPMSM63P180
Text: J2E0042-18-95 ¡ 電子デバイス 作成:1998年 9月 MSM63184B l MSM63184B 0.9V動作保証640ドットマトリクスLCDドライバ内蔵 OTP製品:MSM63P180(ソフト開発評価用) n 概要 MSM63184Bは、640ドットマトリクスLCDドライバを内蔵し、0.9V動作保証をするCMOS 4ビット
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J2E00421895
MSM63184B
9V640LCD
OTPMSM63P180
MSM63184B
MSM63184B640LCD0
MSM63184BCPUnX4/250OLMS63KM6318x
MSM63188PROMOTP
MSM63P180OTPMSM63P180
BD 2135
XT132
P8377
OTPMSM63P180
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WR 138
Abstract: No abstract text available
Text: J2E0026-38-95 ¡ 電子デバイス 作成:1998年 9月 MSM63188 l 前回作成:1997年 4月 MSM63188 0.9V動作保証1024ドットマトリクスLCDドライバ、メロディ回路内蔵 OTP製品:MSM63P180(ソフト開発評価用) n 概要
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J2E00263895
MSM63188
MSM63188
9V1024LCD
OTPMSM63P180
MSM631881024LCD0
MSM63188CPUnX4/250OLMS63KM6318x
MSM63188PROMOTP
MSM63P180OTPMSM63P180
WR 138
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HT27LC512
Abstract: 64k8
Text: HT27LC512 OTP CMOS 64Kx8-Bit EPROM Features • • • • • • • • • • • • 64K×8-bit organization Single +3.3V power supply Programming voltage – VPP=12.2V±0.2V – VCC=5.8V±0.2V Low power consumption – Active: 15mA max. – Standby: 1µA typ.
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HT27LC512
120ns
100mA
28-pin
32-pin
HT27LC512
64k8
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384N
Abstract: COM16 INT182 MSM63182 MSM63182A MSM63P180 QFP128
Text: J2E0055-19-41 ¡ 電子デバイス 作成:1999年 4月 MSM63182A l MSM63182A 0.9V動作保証512ドットマトリクスLCDドライバ内蔵 OTP製品:MSM63P180(ソフト開発評価用) n 概要 MSM63182Aは、MSM63182の消費電流改良版です。
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J2E0055-19-41
MSM63182A
MSM63182A
9V512LCD
OTPMSM63P180
MSM63182AMSM63182
MSM63182A512LCD0
MSM63182ACPUnX-4/250OLMS-63KM6318x
MSM63188/APROM
MSM63P180OTPMSM63P180
384N
COM16
INT182
MSM63182
MSM63P180
QFP128
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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HT23C512
Abstract: No abstract text available
Text: HT23C512 CMOS 64Kx8-Bit Mask ROM Features • • • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. VCC=5V 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V)
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HT23C512
150ns
250ns
28-pin
HT23C512
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HT27PC512-12
Abstract: HT27PC512
Text: HT27PC512 64Kx8-Bit OTP EPROM Features • • • • • 64K×8 organization Single +5V ±10% power supply +12.5V ±5% VPP programming voltage Power consumption – Active: 30mA – Standby: 100µA Max. access time – HT27PC512-45: 45ns – HT27PC512-70: 70ns
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HT27PC512
HT27PC512-45:
HT27PC512-70:
HT27PC512-90:
HT27PC512-12:
120ns
HT27PC512-15:
150ns
28-pin
32-pin
HT27PC512-12
HT27PC512
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V29C51000T/V29C51000B 512K BIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY MOSEL VITELIC Features Description • ■ ■ ■ ■ ■ The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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V29C51000T/V29C51000B
64Kx8-bit
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Untitled
Abstract: No abstract text available
Text: J2E0024-38-95 ¡ 電子デバイス 作成:1998年 9月 MSM63182 l 前回作成:1997年 4月 MSM63182 0.9V動作保証512ドットマトリクスLCDドライバ内蔵 OTP製品:MSM63P180(ソフト開発評価用) n 概要 MSM63182は、512ドットマトリクスLCDドライバを内蔵し、0.9V動作保証をするCMOS 4ビットマ
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J2E00243895
MSM63182
9V512LCD
OTPMSM63P180
MSM63182
MSM63182512LCD0
MSM63182CPUnX4/250OLMS63KM6318x
MSM63188PROM
MSM63P180OTPMSM63P180
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384N
Abstract: COM16 INT182 MSM63182 MSM63188 MSM63P180 QFP128 COM7210 K/4-P51
Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2E0024-38-95
MSM63182
MSM63182
9V512LCD
OTPMSM63P180
MSM63182512LCD0
MSM63182CPUnX-4/250OLMS-63KM6318x
MSM63188PROM
MSM63P180OTPMSM63P180
384N
COM16
INT182
MSM63188
MSM63P180
QFP128
COM7210
K/4-P51
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IN3064
Abstract: L51000-14 V29LC51000 V29LC51001
Text: MOSEL VITELIC V29LC51000 512 KILOBIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ The V29LC51000 is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply.
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V29LC51000
V29LC51000
64Kx8-bit
IN3064
L51000-14
V29LC51001
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C1093
Abstract: SLD9630TT C1079 2007-000162 BA68-40012N C1061 npn 470nF 50V X7R ics954 C347 C558 npn
Text: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 10.자재 리스트 10-1. Main Board X25 / X20(EXT Item No Design LOC Parts name Spec 0201-001002
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BA68-10191W
BA68-40005L
BA68-40012N
BA96-02726A
BA96-02728A
ALVISO500
49LW080
4x10mm
49LF008A
C1093
SLD9630TT
C1079
2007-000162
C1061 npn
470nF 50V X7R
ics954
C347
C558 npn
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100Hz1
Abstract: LQFP176 MSM63182 MSM63184B MSM63188 MSM63P180
Text: J2E0043-38-95 ¡ 電子デバイス 作成:1998年 9月 MSM63P180 l 前回作成:1997年 4月 MSM63P180 16KワードPROM1024ドットマトリクスLCDドライバ内蔵 マスクROM版対応製品:MSM63188, MSM63184B, MSM63182 n 概要 シリーズの
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J2E0043-38-95
MSM63P180
MSM63P180
16KPROM1024LCD
ROMMSM63188,
MSM63184B,
MSM63182
MSM63P180CPUnX-4/250OLMS-63KM6318x
OTPMSM63188PROM
MSM63P180MSM63188
100Hz1
LQFP176
MSM63182
MSM63184B
MSM63188
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bd 108
Abstract: 640N COM16 INT184 MSM63184B MSM63188 MSM63P180 QFP128 K/4-P51
Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2E0042-18-95
MSM63184B
MSM63184B
9V640LCD
OTPMSM63P180
MSM63184B640LCD0
MSM63184BCPUnX-4/250OLMS-63KM6318x
MSM63188PROMOTP
MSM63P180OTPMSM63P180
bd 108
640N
COM16
INT184
MSM63188
MSM63P180
QFP128
K/4-P51
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OEC97
Abstract: No abstract text available
Text: HY62U8512- I Series 64Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8512/HY62U8512-I is a high speed, low power and 512K bit CMOS SRAM organized as 65,536 words by 8bit. The HY62U8512 / HY62U8512-I uses high performance CMOS process technology and designed for high speed
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HY62U8512-
64Kx8bit
HY62U8512/HY62U8512-I
HY62U8512
HY62U8512-I
32pin
-100mA
100mA
OEC97
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x2864b
Abstract: X28C512I X28256 64 CERAMIC LEADLESS CHIP CARRIER LCC CERAMIC LEADLESS CHIP CARRIER X28C512 X28C512-20 X28C512-25 X28C512 xicor x2864a
Text: •JAN 3 1 IS., A D V A N C E D IN FO R M A TIO N c-ioi<■ 512K Com m ercial Industrial X28C512 X28C512I JÜBË oi+ 64Kx8Bit Electrically Erasable PROM • Two PLCC Pinouts — X 28C 512-U V EP R O M Replacements — X 28C 513-X 28C 256 Upgrades • Inherent 1 0 0 + Years Data Retention
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X28C512
X28C512I
128-Byte
X28C512-UVEPROM
X28C513-X28C256
X28C512,
X28C512I
32-PAD
JCO/44
x2864b
X28256
64 CERAMIC LEADLESS CHIP CARRIER LCC
CERAMIC LEADLESS CHIP CARRIER
X28C512-20
X28C512-25
X28C512 xicor
x2864a
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Untitled
Abstract: No abstract text available
Text: •JAN 3 1 iSj, A D V A N C E D IN FO R M A TIO N c io M 512K Commercial Industrial X28C512 X28C512I 64Kx8Bit Electrically Erasable PROM • Tw o PLCC Pinouts — X 28C 512-U V EP R O M Replacements — X 28C 513-X 28C 256 Upgrades • Inherent 1 0 0 + Years Data Retention
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X28C512
X28C512I
64Kx8Bit
512-U
513-X
128-Byte
X28C512,
32-PAD
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Untitled
Abstract: No abstract text available
Text: M OSEL VITELIC V29LC51000 512 K IL O B IT 65,536 x 8 BIT 5 VOLT CM O S FLA SH M E M O R Y P R E LIM IN A R Y Features Description • ■ ■ ■ ■ The V29LC51000 is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply.
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V29LC51000
V29LC51000
64Kx8-bit
5555H/AAH
2AAAH/55H
5555H/A0H
32-pin
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Untitled
Abstract: No abstract text available
Text: HOLTEK r r HT27C512 OTP CMOS 64Kx8-Bit EPROM Features • • • • • • O p e ra tin g voltage: +5.0V P ro g ram m in g voltage - Vpp=12.2V±0.2V - Vcc=5.8V ±0.2V H ig h -reliab ility CM OS technology L atch -u p im m u n ity to 100m A from -1.0V to
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HT27C512
64Kx8-Bit
120ns
28-pin
32-pin
105ns
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V29C51000T/V29C51000B 512K B IT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt
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V29C51000T/V29C51000B
64Kx8-bit
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ti053-0i
Abstract: LD242 PCMCIA FLASH CARD 10MB PCMCIA SRAM Card T1042 tl042 ID242 ID242EXX ID242GXX ID242HXX
Text: ID242 Series Flash Memory Card Model Numbers: ID242xxx Spec No.: CPS0002-002 Issue Date: May, 1998 fllñG T'iñ D032D53 134 SHARP ID242 SERIES PRODUCT OVERVIEW # Handle this document carefully for it contains material protected by international copyright law. Any repro
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ID242
ID242xxx)
CPS0002-002
D032D53
CPS0002-002Â
GD320Ã
ti053-0i
LD242
PCMCIA FLASH CARD 10MB
PCMCIA SRAM Card
T1042
tl042
ID242EXX
ID242GXX
ID242HXX
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