MOSFET SPICE MODEL Search Results

Spice Model for TMOS Power MOSFETs

Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
Contextual Info: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in

SIPMOS

Abstract: siemens igbt profet igbt types SIPMOS SPICE SPICE MODELS models spice simulation Semiconductor Group igbt mosfet
Contextual Info: Simulation Models for SIPMOS Components The SIEMENS Power Semiconductor Group provides SPICE models for many MOSFET and IGBT types. Please refer to the README.TXT-file in the /LHDATAdirectory on the CD-ROM. Additional models SPICE, SABER for MOSFET, PROFET, will be available by the

IRF130

Abstract: jfet jfet cascode intersil jfet AN8610 ronan intersil JFET TO 18 IRFl30 JFET application note
Contextual Info: Spicing-Up Spice II Software For Power MOSFET Modeling Application Note The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated circuits. Developed by L. W. Nagel in 1973, SPICE II has become a widely available, well-understood design tool for

Contextual Info: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

1910 0016 diode

Abstract: sir412dp
Contextual Info: SPICE Device Model SiR412DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

SiR422DP

Contextual Info: SPICE Device Model SiR422DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

sir418dp

Contextual Info: SPICE Device Model SiR418DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR408DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Si2367DS

Contextual Info: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Si5471DC

Contextual Info: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

sir426

Abstract: SiR426DP diode 1776 B
Contextual Info: SPICE Device Model SiR426DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

SI2305CDS

Abstract: SI2305 44A16
Contextual Info: SPICE Device Model Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Si7288DP

Abstract: s091 SI7288
Contextual Info: SPICE Device Model Si7288DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

SIR172DP

Contextual Info: SPICE Device Model SiR172DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si7625DN

Abstract: mosfet 4430 si7625 S10-2503
Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

s1124

Contextual Info: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

mosfet 2891

Contextual Info: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si7997

Contextual Info: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S10-1617

Contextual Info: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C