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Vishay Siliconix SIR820DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR820DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.54	Buy Now
Vishay Intertechnologies SIR820DP-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR820DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SIR820DP-T1-GE3	Reel		22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.53137	Buy Now
	SIR820DP-T1-GE3	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.53137	Buy Now
Mouser Electronics	SIR820DP-T1-GE3					1 - 10 - 100 - 1000 - 10000 $0.54	Get Quote
TTI	SIR820DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.548	Buy Now
TME	SIR820DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.89	Get Quote
EBV Elektronik	SIR820DP-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIR820DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR820DP-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 40A POWERPAKSO-8		Original	PDF

SIR820DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SPICE Device Model SiR820DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	SiR820DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR820DP 2002/95/EC SiR820DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR820DP 2002/95/EC SiR820DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	SiR820DP 11-Mar-11	PDF
15-Feb-10 Abstract: 67845 BVDSS Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR820DP 2002/95/EC SiR820DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 15-Feb-10 67845 BVDSS	PDF
Contextual Info: SiR820DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiR820DP AN609, 8508m 7985m 6464m 2139m 0587m 1192m 4722m 4249m	PDF
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition	Original	SiR820DP 2002/95/EC SiR820DP-T1-GE3 11-Mar-11	PDF
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	SiR820DP 2002/95/EC SiR820DP-T1-GE3 11-Mar-11	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF