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    Vishay Siliconix SI4914BDY-T1-E3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    DigiKey SI4914BDY-T1-E3 Reel
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    Vishay Siliconix SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A/8A 8SOIC
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    DigiKey SI4914BDY-T1-GE3 Cut Tape
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    SI4914BDY-T1-GE3 Digi-Reel 1
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    SI4914BDY-T1-GE3 Reel
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    Vishay Intertechnologies SI4914BDY-T1-GE3

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    Bristol Electronics SI4914BDY-T1-GE3 8,685
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    Quest Components SI4914BDY-T1-GE3 6,948
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    Vishay Intertechnologies SI4914BDY-T1-E3

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    Bristol Electronics SI4914BDY-T1-E3 7,757
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    Vishay Huntington SI4914BDY-T1-GE3

    MOSFET 2N-CH 30V 8.4A 8-SOIC
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    Win Source Electronics SI4914BDY-T1-GE3 23,000
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    SI4914B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4914BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF
    SI4914BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.4A 8-SOIC Original PDF

    SI4914B Datasheets Context Search

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    si4914b

    Abstract: si4914 Si4914BDY
    Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4914BDY 18-Jul-08 si4914b si4914

    Si4914B

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 11-Mar-11 Si4914B

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC Si4914BDY-T1-E3 Si4914BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4914b

    Abstract: Si4914BDY-T1-E3
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V 8d VDS (V) Channel-1 30 Channel-2


    Original     		PDF Si4914BDY 08-Apr-05 si4914b Si4914BDY-T1-E3

    Si4914B

    Abstract: si4914 si4914bdy Si4914BDY-T1-E3 SI4914BD
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 18-Jul-08 Si4914B si4914 Si4914BDY-T1-E3 SI4914BD

    AN609

    Abstract: 72482 si4914bdy 56181
    Text: Si4914BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4914BDY AN609 16-Oct-07 72482 56181

    SI4914BDY-T1-E3

    Abstract: SI4914BDY Si4914DY Si4914DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4914BDY vs. Si4914DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements: Si4914BDY-T1-E3 replaces Si4914DY-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4914BDY Si4914DY Si4914BDY-T1-E3 Si4914DY-T1-E3 28-Feb-08

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4914BDY-T1-E3

    Abstract: si4914
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 18-Jul-08 SI4914BDY-T1-E3 si4914

    Si4914BDY-T1-E3

    Abstract: si4914bdy
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 11-Mar-11 Si4914BDY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4914BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.021 at VGS = 10 V 8.4 0.027 at VGS = 4.5 V 7.4 0.020 at VGS = 10 V 8d 0.025 at VGS = 4.5 V


    Original     		PDF Si4914BDY Si4914BDY-T1-E3 Si4914BDY-T1-GE3 18-Jul-08

    IT8301E

    Abstract: 12073A AES2810 AMD r6970 SN0508073 R5C832 l3007 T127 temp NTC thermistor SCK 083 tokin 108
    Text: A B C D E Wistron CONFIDENTIAL 1 MODEL NAME : Diaz UMA 91.4AR01.001 Project Code: 08217-1 PCB NO : 1 2 2 Diaz Intergrate Intel GM Schematics Document uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 3 3 REV : A00 4 4 Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,


    Original     		PDF 4AR01 R2118 CON6605 C6644 C6645 C6646 C6647 C6648 C6636 C6637 IT8301E 12073A AES2810 AMD r6970 SN0508073 R5C832 l3007 T127 temp NTC thermistor SCK 083 tokin 108

    IT8301E

    Abstract: IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence
    Text: A 1 B C D E Model Name : Diaz Discrete Project Code : 91.4AR01.001 Revision : 08218-1 1 2 2 Diaz Discrete VGA ATI M82-S Schematics Document uFCPGA Mobile Merom Intel Crestline-PM + ICH8M 3 3 REV : A00 4 4 DZ1VQAT Wistron Corporation 5 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,


    Original     		PDF 4AR01 M82-S R5401 R4303 R4029 R4030 C6925 100pF IT8301E IT8301 12073A EMC4001 L4910 C616A C536 PSE IT8512E Si4914B WISTRON power sequence

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477