SIR412DP Search Results

1910 0016 diode

Abstract: sir412dp
Contextual Info: SPICE Device Model SiR412DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SiR412DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 25 0.012 at VGS = 10 V 20 0.015 at VGS = 4.5 V 20 Qg (Typ.) 4.9 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

Contextual Info: SiR412DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 25 0.012 at VGS = 10 V 20 0.015 at VGS = 4.5 V 20 Qg (Typ.) 4.9 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

2029 mosfet

Abstract: ec 2029 SiR412DP-T1-GE3
Contextual Info: SiR412DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 25 0.012 at VGS = 10 V 20 0.015 at VGS = 4.5 V 20 Qg (Typ.) 4.9 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

Contextual Info: SiR412DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 25 0.012 at VGS = 10 V 20 0.015 at VGS = 4.5 V 20 Qg (Typ.) 4.9 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model SiR412DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SiR412DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 25 0.012 at VGS = 10 V 20 0.015 at VGS = 4.5 V 20 Qg (Typ.) 4.9 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

5275

Abstract: 8402 MOSFET a 4504 AN609
Contextual Info: SiR412DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SiR412DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 25 0.012 at VGS = 10 V 20 0.015 at VGS = 4.5 V 20 Qg (Typ.) 4.9 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 • Halogen-free According to IEC 61249-2-21

Sanyo supercapacitors

Abstract: maxwell balancing
Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors

CTX03-18774

Abstract: CTX03-18775 TRANSISTOR N3 CTX03 transformer EP10 GRM1885C1H100H CTX031 MAX5974A MAX5974AETE 0826-1X1T-GH-F
Contextual Info: 19-5880; Rev 0; 5/11 MAX5974A Evaluation Kit The EV kit features a galvanically isolated 25W, 600kHz switching frequency forward DC-DC converter using the IC. The circuit achieves high efficiency up to 92% VIN = +42V using a coupled-inductor forward DC-DC

Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs