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    S091 Search Results

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    S091 Price and Stock

    Harwin S0911-46R

    RFI SHLD CLIP BECU TIN SOLDER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S0911-46R Reel 39,000 6,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.17311
    		Buy Now
    Mouser Electronics S0911-46R 45,307
    • 1 $0.51
    • 10 $0.442
    • 100 $0.33
    • 1000 $0.2
    • 10000 $0.159
    		Buy Now
    Newark S0911-46R Cut Tape 140 1
    • 1 $0.215
    • 10 $0.215
    • 100 $0.215
    • 1000 $0.182
    • 10000 $0.182
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    TTI S0911-46R Reel 6,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.157
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    Powell Electronics S0911-46R 27 1
    • 1 $0.64
    • 10 $0.45
    • 100 $0.43
    • 1000 $0.39
    • 10000 $0.39
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    Avnet Abacus S0911-46R 117,000 8 Weeks 6,500
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    New Advantage Corporation S0911-46R 78,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1626
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    MEC Switches A/S 1SS09-10.4

    CAP TACTILE ROUND BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS09-10.4 Bag 8,389 1
    • 1 $0.37
    • 10 $0.335
    • 100 $0.3031
    • 1000 $0.27456
    • 10000 $0.25618
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    MEC Switches A/S 2S09-10.0

    EXTENDER SWITCH 10MM HEIGHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2S09-10.0 Bag 4,838 1
    • 1 $0.79
    • 10 $0.719
    • 100 $0.6514
    • 1000 $0.58998
    • 10000 $0.55046
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    Newark 2S09-10.0 Bulk 1,670 10
    • 1 -
    • 10 $0.699
    • 100 $0.604
    • 1000 $0.604
    • 10000 $0.604
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    MEC Switches A/S 1S09-16.0

    CAP TACTILE ROUND BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1S09-16.0 Bag 4,492 1
    • 1 $0.66
    • 10 $0.6
    • 100 $0.5433
    • 1000 $0.49206
    • 10000 $0.4591
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    TME 1S09-16.0 1
    • 1 $0.377
    • 10 $0.346
    • 100 $0.281
    • 1000 $0.271
    • 10000 $0.271
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    Nihon Dempa Kogyo Co Ltd CS09166-32M

    CRYSTAL 32.0000MHZ 8PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CS09166-32M Digi-Reel 3,170 1
    • 1 $0.86
    • 10 $0.743
    • 100 $0.646
    • 1000 $0.56141
    • 10000 $0.56141
    		Buy Now
    CS09166-32M Cut Tape 3,170 1
    • 1 $0.86
    • 10 $0.743
    • 100 $0.646
    • 1000 $0.56141
    • 10000 $0.56141
    		Buy Now
    CS09166-32M Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.52507
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    Find more S091 price and stock on Findchips.com

    S091 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S0911-46R Harwin RFI SHIELD CLIP COMPACT TIN SMD Original PDF
    S0918 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    S0918R Unknown Shortform Transistor PDF Datasheet Short Form PDF

    S091 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    s0918

    Abstract: d7c transistor marking N10
    Text: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND


    OCR Scan     		S0918 OT-23 OT-23 s0918 d7c transistor marking N10 PDF

    2SA522

    Abstract: 2SA522A 2SD110 2SK15-M 8D-18 3SK28-M MS0912 3SK28
    Text: f l * £ *& Ta=25°C Vf;|)S e æ * M # m m « « M S0912 -60731 ßWiSJWW Nf t ^ 2 S K 1 5 -M 3 S K 2 8 -M N Tj p -3 0 V'GIDS 18 Vg2I)S -18 -= + T ?•«.»<>» I C SS ft MIN Vos (V ) Vus (V ) (m A ) -1 0 0 .8 V e is -1 5 \fc[G2 =- 0 3 .7 * M AX (V) M S0912 - 60730


    OCR Scan     		Ta-25 MS0912 2SK15-M 3SK28-M Ici-10 Iq-10 8D-18Ã 2SD110 2SA522 2SA522A 2SD110 8D-18 3SK28 PDF

    s0913

    Abstract: No abstract text available
    Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s0913 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI4850EY-t1g

    Abstract: si4850
    Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4850EY-t1g si4850 PDF

    DG9424

    Abstract: cnc schematic diagram
    Text: DG9424, DG9425, DG9426 Vishay Siliconix Low-Voltage, Dual Supply, Low RON, Quad SPST Analog Switches DESCRIPTION FEATURES The DG9424, DG9425, DG9426 are low voltage precision monolithic quad single-pole-single-throw analog switches. • 2.7 V thru 12 V single supply or ± 3 thru ± 6 dual supply


    Original     		DG9424, DG9425, DG9426 DG9426 DG9424 cnc schematic diagram PDF

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AC-DC Converters

    Abstract: RESISTOR VDR
    Text: X Series Data Sheet 375 and 500 Watt AC-DC Converters Input range 85 to 264 VAC with PFC 1 or 2 isolated, regulated outputs up to 96 V Class I equipment Features • RoHS lead-solder-exempt compliant • Electrically and mechanically rugged DIN-rail front end


    Original     		LXR1601-6 LXN1601-6 AC-DC Converters RESISTOR VDR PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si7463DP 2002/95/EC Si7463DP-T1-E3 Si7463DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    transistor 1047

    Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR
    Text: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low


    Original     		SiP21106 SiP21107 SiP21108 150-mA 11-Mar-11 transistor 1047 SC70-5L TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si8461DB 2002/95/EC Si8461DB-T2-E1 11-Mar-11 PDF

    SiE844DF-T1-E3

    Abstract: SiE844DF-T1-GE3 SiE844DF
    Text: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET


    Original     		SiE844DF 2002/95/EC 11-Mar-11 SiE844DF-T1-E3 SiE844DF-T1-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original     		SiE818DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V


    Original     		Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product is End of Life 3/2014 SiP12503 Vishay Siliconix 500-mA - Adjustable Boost Converter for Single or Dual Cell DESCRIPTION FEATURES SiP12503 is a boost converter IC with adjustable output voltage for single or dual cell NiMH or Alkaline battery pack.


    Original     		SiP12503 500-mA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SQ3456EV

    Abstract: SQ3456EV-T1-GE3
    Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 18-Jul-08 SQ3456EV SQ3456EV-T1-GE3 PDF

    CRCW06031132F

    Abstract: MSOP-10
    Text: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to


    Original     		SiP12101 18-Jul-08 CRCW06031132F MSOP-10 PDF

    SIR164DP

    Abstract: A7282 65060 spice model 740
    Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR164DP 18-Jul-08 A7282 65060 spice model 740 PDF

    Si7617DN

    Abstract: SI7617
    Text: SPICE Device Model Si7617DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7617DN 18-Jul-08 SI7617 PDF

    SiA517DJ

    Abstract: S09-1808
    Text: SPICE Device Model SiA517DJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original     		SiA517DJ 18-Jul-08 S09-1808 PDF

    SUP60N10-18P

    Abstract: No abstract text available
    Text: SPICE Device Model SUP60N10-18P Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SUP60N10-18P 18-Jul-08 SUP60N10-18P PDF

    SI4470EY-T1-E3

    Abstract: Si4470EY
    Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature


    Original     		Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 18-Jul-08 PDF