s0913
Abstract: No abstract text available
Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4486EY
2002/95/EC
Si4486EY-T1-E3
Si4486EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s0913
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Untitled
Abstract: No abstract text available
Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4484EY
2002/95/EC
Si4484EY-T1-E3
Si4484EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI4850EY-t1g
Abstract: si4850
Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4850EY
2002/95/EC
Si4850EY-T1-E3
Si4850EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4850EY-t1g
si4850
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Si9407AEY
Abstract: No abstract text available
Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si9407AEY
2002/95/EC
Si9407AEY-T1-E3
Si9407AEY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3456DDV
2002/95/EC
Si3456DDV-T1-E3
Si3456DDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiE844DF-T1-E3
Abstract: SiE844DF-T1-GE3 SiE844DF
Text: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET
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SiE844DF
2002/95/EC
11-Mar-11
SiE844DF-T1-E3
SiE844DF-T1-GE3
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Untitled
Abstract: No abstract text available
Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE818DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V
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Si4559EY
2002/95/EC
Si4559EY-T1-E3
Si4559EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SQ3456EV
Abstract: SQ3456EV-T1-GE3
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
18-Jul-08
SQ3456EV
SQ3456EV-T1-GE3
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SI4470EY-T1-E3
Abstract: Si4470EY
Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4470EY
2002/95/EC
Si4470EY-T1-E3
Si4470EY-T1-GE3
18-Jul-08
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si5458
Abstract: No abstract text available
Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5458DU
2002/95/EC
Si5458DU-T1-GE3
18-Jul-08
si5458
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Si4948EY
Abstract: No abstract text available
Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4948EY
2002/95/EC
Si4948EY-T1-E3
Si4948EY-T1-GE3
18-Jul-08
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SUM40N15-38
Abstract: SUM40N15-38-E3
Text: SUM40N15-38 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) • • • • • ID (A) 0.038 at VGS = 10 V 40 0.042 at VGS = 6 V 38 TrenchFET Power MOSFETs 175 °C Junction Temperature New Low Thermal Resistance Package
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SUM40N15-38
2002/95/EC
O-263
SUM40N15-38-E3
18-Jul-08
SUM40N15-38
SUM40N15-38-E3
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Si9945AEY-T1-E3
Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A
Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si9945AEY
2002/95/EC
Si9945AEY-T1-E3
Si9945AEY-T1-GE3
18-Jul-08
SI9945
SI9945A
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Untitled
Abstract: No abstract text available
Text: New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5906DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE822DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiE862DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for
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SiE862DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI9945AEY-T1
Abstract: No abstract text available
Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Original
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Si9945AEY
2002/95/EC
Si9945AEY-T1-E3
Si9945AEY-T1-GE3
11-Mar-11
SI9945AEY-T1
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Untitled
Abstract: No abstract text available
Text: SiE850DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE850DF
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiE808DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE808DF
2002/95/EC
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE830DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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74485
Abstract: No abstract text available
Text: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE818DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
74485
|
Untitled
Abstract: No abstract text available
Text: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Si3493BDV
2002/95/EC
Si3493BDV-T1-E3
Si3493BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE860DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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