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    SI9945AEY Price and Stock

    Vishay Siliconix SI9945AEY-T1

    MOSFET 2N-CH 60V 3.7A 8SOIC
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    DigiKey SI9945AEY-T1 Reel 2,500
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    Vishay Semiconductors SI9945AEY-T1-E3

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    Bristol Electronics SI9945AEY-T1-E3 145
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    Vishay Intertechnologies SI9945AEY

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    Bristol Electronics SI9945AEY 40
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    Vishay Siliconix SI9945AEY

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    Bristol Electronics SI9945AEY 34
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    Quest Components SI9945AEY 386
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    Vishay Intertechnologies SI9945AEY-T1-E3

    3.7 A, 60 V, 0.08 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components SI9945AEY-T1-E3 842
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    SI9945AEY Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9945AEY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9945AEY Vishay Dual N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    Si9945AEY Vishay Intertechnology Dual N-Channel Enhancement-Mode MOSFET Original PDF
    SI9945AEY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Dual, Pkg Style SO-8 Scan PDF
    Si9945AEY SPICE Device Model Vishay Dual N-Channel Enhancement-Mode MOSFET Original PDF
    SI9945AEY-T1 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 3.7A 8SOIC Original PDF

    SI9945AEY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9945AEY-T1-E3

    Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 18-Jul-08 SI9945 SI9945A

    SI9945AEY-T1

    Abstract: No abstract text available
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 11-Mar-11 SI9945AEY-T1

    Si9945AEY

    Abstract: Si9945AEY-T1 Si9945AEY-T1-E3
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


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    PDF Si9945AEY Si9945AEY-T1 Si9945AEY-T1-E3 08-Apr-05

    Si9945AEY

    Abstract: No abstract text available
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET


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    PDF Si9945AEY 08-Apr-05

    Si9945aey

    Abstract: SI9945
    Text: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si9945AEY 18-Apr-01 SI9945

    SI9945

    Abstract: Si9945AEY S-5725
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET


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    PDF Si9945AEY S-57253--Rev. 24-Feb-98 SI9945 S-5725

    Si9945AEY-T1

    Abstract: SI9945 SQ9945AEY-T1 AECQ101 SI9945AEY Si9945AEY SPICE Device Model
    Text: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


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    PDF Si9945AEY/SQ9945AEY Si9945AEY-T1 SQ9945AEY-T1 AECQ101 08-Apr-05 SI9945 SQ9945AEY-T1 SI9945AEY Si9945AEY SPICE Device Model

    si9945a

    Abstract: Si9945AEY Si9945AEY-T1-E3 Si9945AEY-T1-GE3 SI9945AEY-T1 a2045
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 11-Mar-11 si9945a SI9945AEY-T1 a2045

    SI9945

    Abstract: Si9945AEY
    Text: SPICE Device Model Si9945AEY Dual N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range


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    PDF Si9945AEY SI9945

    SI9945AEY-T1-E3

    Abstract: Si9945aey SI9945 SI9945AEY-T1
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


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    PDF Si9945AEY Si9945AEY-T1 Si9945AEY-T1-E3 18-Jul-08 SI9945

    SI9945AEY-T1-E3

    Abstract: SI9945BDY-T1-GE3 Si9945aey Si9945BDY SI9945 Si9945AEY-T1 MOSFET 20V
    Text: Specification Comparison Vishay Siliconix Si9945BDY vs. Si9945AEY Description: Package: Pin Out: Dual N-Channel, 20-V D-S MOSFET SO-8 Identical Part Number Replacements: Si9945BDY-T1-GE3 replaces Si9945AEY-T1-E3 Si9945BDY-T1-GE3 replaces Si9945AEY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    PDF Si9945BDY Si9945AEY Si9945BDY-T1-GE3 Si9945AEY-T1-E3 Si9945AEY-T1 25-May-09 SI9945 MOSFET 20V

    SI9945

    Abstract: Siliconix Si9945AEY
    Text: Si9945AEY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY VDS (V) 60 RDS(ON) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET


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    PDF Si9945AEY S-57253--Rev. 24-Feb-98 SI9945 Siliconix

    SI9945A

    Abstract: SI9945AEY-T1
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI9945A SI9945AEY-T1

    SQ9945AEY-T1

    Abstract: SI9945 AECQ101 Si9945AEY-T1 a2045
    Text: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated


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    PDF Si9945AEY/SQ9945AEY Si9945AEY-T1 SQ9945AEY-T1 AECQ101 S-61010-Rev. 12-Jun-06 SQ9945AEY-T1 SI9945 a2045

    Untitled

    Abstract: No abstract text available
    Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


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    PDF Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI9945

    Abstract: Si9945AEY Si9945AEY SPICE Device Model
    Text: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si9945AEY 18-Jul-08 SI9945 Si9945AEY SPICE Device Model

    74690

    Abstract: SI9945 AN609 Si9945AEY
    Text: Si9945AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si9945AEY AN609 09-May-07 74690 SI9945

    "CCFL Controller"

    Abstract: ccfl driver schematic LX1688CPW 0805N332J500NT SI9945A Royer oscillator schematic diagram of ccfl inverter SI9945 BC847ALT1 LX1686
    Text: RangeMAX I N T E G R A T E D LX1688 MULTIPLE LAMP CCFL CONTROLLER P R O D U C T S KEY FEATURES DESCRIPTION generation technique. Safety and reliability features include a dual feedback control loop that permits regulation of maximum lamp strike voltage as well as lamp current.


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    PDF LX1688 155mm( "CCFL Controller" ccfl driver schematic LX1688CPW 0805N332J500NT SI9945A Royer oscillator schematic diagram of ccfl inverter SI9945 BC847ALT1 LX1686

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


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    PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    SI9945

    Abstract: 20-PIN 400HZ LX1686 LX1689 LX1689CPW LX1689CPWT LX1689IPW
    Text: LX1689 I N T E G R A T E D Third Generation CCFL Controller P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The brightness control input allows the use of either a DC voltage or a PWM input to simplify design. Programmable polarity brightness control is retained,


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    PDF LX1689 SI9945 20-PIN 400HZ LX1686 LX1689 LX1689CPW LX1689CPWT LX1689IPW

    SDCFB

    Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


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    PDF SC141D SI4480DY SMBJ12CA SN7474N SI4410DY-REVA SLOP114 SN7432N SN74ALS05AN SI4412DY SLVP097 SDCFB sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    LX1689CPW

    Abstract: No abstract text available
    Text: LX1689 Third Generation CCFL Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION WWW . Microsemi .C OM ƒ 3 to 28 Volt Single Fixed ±20% Supply Operating Range ƒ Selectable Analog/Digital Dimming Modes ƒ Digital Dimming Can Synch to External Or Internal Clocks


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    PDF LX1689 LX1689 LX1686 LX1686, LX1689CPW

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L