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    SIHP8N50D Search Results

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    SIHP8N50D Price and Stock

    Vishay Siliconix SIHP8N50D-E3

    MOSFET N-CH 500V 8.7A TO220AB
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    DigiKey SIHP8N50D-E3 Tube 1,000 1
    • 1 $2.27
    • 10 $2.27
    • 100 $0.9886
    • 1000 $0.72554
    • 10000 $0.72554
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    Vishay Siliconix SIHP8N50D-GE3

    MOSFET N-CH 500V 8.7A TO220AB
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    DigiKey SIHP8N50D-GE3 Tube 60 1
    • 1 $1.95
    • 10 $1.95
    • 100 $0.9362
    • 1000 $0.9362
    • 10000 $0.9362
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    Bristol Electronics SIHP8N50D-GE3 950
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    Quest Components SIHP8N50D-GE3 760
    • 1 $2.028
    • 10 $2.028
    • 100 $1.014
    • 1000 $0.8112
    • 10000 $0.8112
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    Vishay Intertechnologies SIHP8N50D-GE3

    Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Power Dissipation:156W; Msl:- Rohs Compliant: Yes |Vishay SIHP8N50D-GE3
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    Newark () SIHP8N50D-GE3 Reel 1,000
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    SIHP8N50D-GE3 Cut Tape 1,000
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    Bristol Electronics SIHP8N50D-GE3 5,000
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    Quest Components SIHP8N50D-GE3 4,000
    • 1 $2.028
    • 10 $2.028
    • 100 $2.028
    • 1000 $0.7098
    • 10000 $0.6084
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    TME SIHP8N50D-GE3 1
    • 1 $1.21
    • 10 $1.02
    • 100 $0.8
    • 1000 $0.63
    • 10000 $0.63
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    EBV Elektronik SIHP8N50D-GE3 143 Weeks 50
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    Vishay Intertechnologies SIHP8N50DGE3

    POWER MOSFET Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA SIHP8N50DGE3 1,900
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    Vishay Intertechnologies SIHP8N50D-E3

    NCHANNEL 500V (Alt: SIHP8N50D-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHP8N50D-E3 143 Weeks 50
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    SIHP8N50D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP8N50D-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8.7A TO220AB Original PDF
    SIHP8N50D-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8.7A TO220AB Original PDF

    SIHP8N50D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)


    Original     		SiHP8N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)


    Original     		SiHP8N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)


    Original     		SiHP8N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)


    Original     		SiHP8N50D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHP8N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP8N50D AN609, 3760m 4432m 4255m 7553m 8515m 5365m 2093m 1947m PDF

    Contextual Info: SPICE Device Model SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiHP8N50D 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)


    Original     		SiHP8N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF