Datasheet Archive: SI7625DN datasheets

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Vishay Siliconix SI7625DN-T1-GE3 MOSFET P-CH 30V 35A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7625DN-T1-GE3	Cut Tape	20,352		1	1 $1.66 10 $1.051 100 $1.66 1000 $0.50527 10000 $0.50527	Buy Now
	SI7625DN-T1-GE3	Digi-Reel	20,352		1	1 $1.66 10 $1.051 100 $1.66 1000 $0.50527 10000 $0.50527	Buy Now
	SI7625DN-T1-GE3	Reel	18,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.44429	Buy Now
New Advantage Corporation	SI7625DN-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.52	Buy Now
Vishay Intertechnologies SI7625DN-T1-GE3 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7625DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI7625DN-T1-GE3	Reel	3,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.39852	Buy Now
Mouser Electronics	SI7625DN-T1-GE3		70,467			1 $0.8 10 $0.797 100 $0.589 1000 $0.459 10000 $0.405	Buy Now
Verical	SI7625DN-T1-GE3		3,000		101	1 - 10 - 100 - 1000 $0.6012 10000 $0.6012	Buy Now
	SI7625DN-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.8178	Buy Now
	SI7625DN-T1-GE3		1,628		15	1 - 10 - 100 $0.4155 1000 $0.4155 10000 $0.4155	Buy Now
Arrow Electronics	SI7625DN-T1-GE3		3,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.4357	Buy Now
	SI7625DN-T1-GE3		3,000	17 Weeks	1	1 $0.6012 10 $0.6012 100 $0.6012 1000 $0.6012 10000 $0.6012	Buy Now
	SI7625DN-T1-GE3	Cut Strips	1,628	17 Weeks	1	1 $0.6012 10 $0.553 100 $0.485 1000 $0.4155 10000 $0.4155	Buy Now
Newark	SI7625DN-T1-GE3	Cut Tape	15,540		1	1 $0.93 10 $0.777 100 $0.623 1000 $0.623 10000 $0.623	Buy Now
	SI7625DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.431	Buy Now

TTI	SI7625DN-T1-GE3	Reel	30,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.394	Buy Now
TME	SI7625DN-T1-GE3				1	1 $0.92 10 $0.83 100 $0.66 1000 $0.62 10000 $0.62	Get Quote
Avnet Asia	SI7625DN-T1-GE3		3,000	19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI7625DN-T1-GE3			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI7625DN-T1-GE3. Mosfet, P Channel, -30V, -35A, Powerpak 1212-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:52W Rohs Compliant: Yes \|Vishay SI7625DN-T1-GE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI7625DN-T1-GE3.	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.431	Buy Now
Vishay Huntington SI7625DN-T1-GE3 P-Channel 30 V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI7625DN-T1-GE3		24,292			1 - 10 - 100 $0.5159 1000 $0.3995 10000 $0.3995	Buy Now

SI7625DN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7625DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 1212-8 PPAK		Original	PDF

SI7625DN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si7625DN Abstract: mosfet 4430 si7625 S10-2503 Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503
Untitled Abstract: No abstract text available Text: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si7625DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si7625DN Abstract: 1055 AN609 si7625 Text: Si7625DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si7625DN AN609, 02-Mar-10 1055 AN609 si7625
Untitled Abstract: No abstract text available Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si7625DN Abstract: S10-0638-Rev si7625 Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08 S10-0638-Rev si7625
SIS443DN Abstract: Si7625DN S12307 Text: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:	Original	PDF	SiS443DN Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Si7625DN S12307
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	PDF	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
SI4497 Abstract: No abstract text available Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm	Original	PDF	SC-75 VMN-PT0197-1006 SI4497

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SI7625DN Datasheets (1)

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