Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
SiRA02DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC
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PDF
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SiRA14DP
SiRA14DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM55P06-19L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 Qg (Typ.) 76 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see
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SUM55P06-19L
O-263
SUM55P06-19L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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A8483
Abstract: No abstract text available
Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile
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Original
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PDF
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Si8483DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
A8483
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Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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Original
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PDF
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SiRA02DP
SiRA02DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MOSFET, 3077
Abstract: 3077 mosfet
Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC
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Original
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PDF
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SiRA14DP
SiRA14DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MOSFET, 3077
3077 mosfet
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SIS443DN
Abstract: Si7625DN S12307
Text: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:
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SiS443DN
Si7625DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
Si7625DN
S12307
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375id
Abstract: SiR872ADP mosfet 3079
Text: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SiR872ADP
SiR872ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
375id
mosfet 3079
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Untitled
Abstract: No abstract text available
Text: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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Original
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PDF
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SiSA14DN
SiSA14DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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Original
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PDF
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SiR872ADP
SiR872ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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Original
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PDF
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SiSA14DN
SiSA14DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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Original
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PDF
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SiR872ADP
SiR872ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see
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Original
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PDF
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SUM110P08-11L
O-263
SUM110P08-11L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUM110P08-11L rev
Abstract: No abstract text available
Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see
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Original
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PDF
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SUM110P08-11L
O-263
SUM110P08-11L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SUM110P08-11L rev
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