SIRA02DP Search Results
SIRA02DP Price and Stock
Vishay Siliconix SIRA02DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA02DP-T1-GE3 | Cut Tape | 6,428 | 1 |
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SIRA02DP-T1-GE3 | Bulk | 3,000 |
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Vishay Intertechnologies SIRA02DP-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA02DP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA02DP-T1-GE3 | Reel | 16 Weeks | 3,000 |
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SIRA02DP-T1-GE3 | 4,256 |
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SIRA02DP-T1-GE3 | 3,000 | 3,000 |
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SIRA02DP-T1-GE3 | 3,000 | 16 Weeks | 3,000 |
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SIRA02DP-T1-GE3 | Reel | 3,000 |
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SIRA02DP-T1-GE3 | 4,002 |
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SIRA02DP-T1-GE3 | 3,201 |
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SIRA02DP-T1-GE3 | Reel | 3,000 |
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SIRA02DP-T1-GE3 | 1 |
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SIRA02DP-T1-GE3 | 17 Weeks | 3,000 |
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SIRA02DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIRA02DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A SO-8 | Original |
SIRA02DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiRA02DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiRA02DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiRA02DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiRA02DP AN609, 1877m 0935u 1831m 4292u 2011m 5941m 6543m 13-Jan-12 | |
siraContextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sira | |
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 |
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SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 11-Mar-11 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications: |
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SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 | |
Contextual Info: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Telecommunications Infrastructure Transmitters, Base Stations |
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AEC-Q101 VMN-MS6761-1212 | |
PowerPAK 1212-8
Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
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VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip | |
Contextual Info: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications テレコミュニケーション・ インフラ |
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AEC-Q101 VMN-MS6792-1304-TETI | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
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N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |