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Vishay Siliconix SIRA14DP-T1-GE3 MOSFET N-CH 30V 58A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA14DP-T1-GE3	Cut Tape	2,704		1	1 $1.07 10 $0.667 100 $1.07 1000 $0.30518 10000 $0.30518	Buy Now
	SIRA14DP-T1-GE3	Digi-Reel	2,704		1	1 $1.07 10 $0.667 100 $1.07 1000 $0.30518 10000 $0.30518	Buy Now
	SIRA14DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.26459	Buy Now
RS	SIRA14DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.63	Get Quote
Vishay Intertechnologies SIRA14DP-T1-GE3 Trans MOSFET N-CH 30V 19.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA14DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA14DP-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.21587	Buy Now
Mouser Electronics	SIRA14DP-T1-GE3		33,166			1 $0.76 10 $0.554 100 $0.372 1000 $0.271 10000 $0.219	Buy Now
Newark	SIRA14DP-T1-GE3	Bulk	3,582		1	1 $0.7 10 $0.593 100 $0.439 1000 $0.373 10000 $0.373	Buy Now
Bristol Electronics	SIRA14DP-T1-GE3		2,830			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SIRA14DP-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.213	Buy Now

TME	SIRA14DP-T1-GE3		1,999		1	1 $0.651 10 $0.386 100 $0.306 1000 $0.257 10000 $0.239	Buy Now
Avnet Asia	SIRA14DP-T1-GE3		12,000	22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA14DP-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SIRA14DP-T1-GE3 MOSFET N-CH 30V 58A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIRA14DP-T1-GE3		402,971			1 - 10 - 100 - 1000 $0.218 10000 $0.189	Buy Now

SIRA14DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA14DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 58A SO-8		Original	PDF

SIRA14DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
63935 Abstract: No abstract text available Text: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiRA14DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63935
Untitled Abstract: No abstract text available Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.00510 at VGS = 10 V 58 0.00850 at VGS = 4.5 V 45 Qg (TYP.) 9.4 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiRA14DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.00510 at VGS = 10 V 58 0.00850 at VGS = 4.5 V 45 Qg (TYP.) 9.4 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA14DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiRA14DP AN609, 7151m 6850u 0443m 1908m 2127m 0229m 13-Jan-12
MOSFET, 3077 Abstract: 3077 mosfet Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 MOSFET, 3077 3077 mosfet
Untitled Abstract: No abstract text available Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
A2718 Abstract: No abstract text available Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	PDF	SiRA14DP SiRA14DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A2718
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	PDF	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	PDF	VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
POWERPAK SO8 Abstract: SIS32 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	PDF	SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

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SIRA14DP Price and Stock

Vishay Siliconix SIRA14DP-T1-GE3

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SIRA14DP Datasheets (1)

SIRA14DP Datasheets Context Search

63935

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

MOSFET, 3077

Untitled

A2718

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PowerPAK 1212-8

si7121

POWERPAK SO8