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    SIHP17N60D Price and Stock

    Vishay Siliconix SIHP17N60D-E3

    MOSFET N-CH 600V 17A TO220AB
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    DigiKey SIHP17N60D-E3 Tube 1,000
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    • 1000 $1.52526
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    Vishay Siliconix SIHP17N60D-GE3

    MOSFET N-CH 600V 17A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP17N60D-GE3 Tube 1,000
    • 1 -
    • 10 -
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    • 1000 $1.52526
    • 10000 $1.52526
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    Vishay Intertechnologies SIHP17N60D-E3

    Mosfet, N Channel, 600V, 17A, To-220Ab-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:-Rohs Compliant: Yes |Vishay SIHP17N60D-E3
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    Newark SIHP17N60D-E3 Cut Tape 1,000
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    SIHP17N60D-E3 Reel 1,000
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    Vishay Intertechnologies SIHP17N60D-GE3

    Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHP17N60D-GE3 1
    • 1 $3.25
    • 10 $2.92
    • 100 $2.32
    • 1000 $2.17
    • 10000 $2.17
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    Vishay Siliconix SIHP17N60D

    D SERIES POWER MOSFET Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHP17N60D 600
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    Find more SIHP17N60D price and stock on Findchips.com

    SIHP17N60D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP17N60D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 17A TO-220AB Original PDF
    SIHP17N60D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 17A TO-220AB Original PDF

    SIHP17N60D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)


    Original     		PDF SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)


    Original     		PDF SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)


    Original     		PDF SiHP17N60D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)


    Original     		PDF SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S11074

    Abstract: No abstract text available
    Text: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiHP17N60D 2002/95/EC O-220AB O-220AB SiHP17N60D-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11074

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiHP17N60D 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S11074

    Abstract: No abstract text available
    Text: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiHP17N60D 2002/95/EC O-220AB O-220AB SiHP17N60D-E3 11-Mar-11 S11074

    Untitled

    Abstract: No abstract text available
    Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)


    Original     		PDF SiHP17N60D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Device Application Note AN849

    Abstract: AN849 planar mosfet
    Text: VISHAY SILICONIX www.vishay.com MOSFETs Device Application Note AN849 Power MOSFET Basics Understanding Superjunction Technology by Sanjay Havanur and Philip Zuk Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching


    Original     		PDF AN849 Device Application Note AN849 AN849 planar mosfet