MGF4918D
Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F
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OCR Scan
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GD-16
GD-15
GD-18
MGF4314D
MGF4316D
MGF4317D
MGF4318D
MGF4314E12
MGF4918D
MGF4919F
MGF4919
MGF4319F
MGF-4317D
MGF4914D
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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OCR Scan
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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OCR Scan
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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MGF4310
Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.
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OCR Scan
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MGFC4410
MGF4310
MGF4910
200um
8E-30
MGF4914E-01
MGF4918E-01
12GHz,
MGF4914C
MGF4318E-01
MGF4918D
MGF4914
MGF4917
MGFC4418
MGFC4416
MGF4318
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MGF4317D
Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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OCR Scan
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F4310D
MGF4310D
12GHz
GF4314D:
GF4316D:
F4317D:
GF4318D:
12GHz
4310D
MGF4317D
MGF-4317D
MGF4310
MGF4316D
MGF4318D
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MGF4310
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .
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OCR Scan
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4310E
F4319E
MGF4310E
MGF4314E
MGF4318E
GF4319E
MGF4310
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PDF
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MGF1802
Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a
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Original
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MGF431OD
12GHz
MGF4314D:
MGF4316D:
MGF4317D:
MGF4318D:
12GHz
MGF4S17D-O1
MGF43I4E45.
MGF1802
mgf431
MGF43180
mitsubishi mgf
MGF1902B-65
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F4310E
Abstract: F4314E mitsubishi application mg series gaas
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic
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OCR Scan
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F4310E
4310E
F4314E
MGF4318E
mitsubishi application mg series gaas
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PDF
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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Original
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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MGF4310
Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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OCR Scan
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MGF4310D
12GHz
MGF4314D:
MGF4316D.
MGF4317D:
MGF4318D:
M5M27C102P
RV-15
MGF4310
MGF4314D
MGF4318D
MGF4316D
MGF4317D
MGF4317
MGF4318
MGF431
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