F4310E Search Results

F4310E

Abstract: F4314E mitsubishi application mg series gaas
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

Contextual Info: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic