4310E Search Results

MGF4310

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .

Contextual Info: PRODUCT DATASHEET 1-800-383-7323 / USA USA/CAN 1-800-383-7323 1-800-383-7323 / CANADA www.energizer.com ENERGIZER 329 SILVER OXIDE Specifications Industry Standard Dimensions mm inches Chemical System: Silver Oxide (Zn/Ag2O) Nominal Voltage: Typical Capacity:

4310E

Contextual Info: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S Alex ESLUOAN Luo Approved 1 (1) (4) No. Checked PKU 4000E seriesEriksson] Direct Converters EAB/FAC/P SEC/S ESLUOAN [Susanne Input 36-72 V, Output up to 10 A / 33 W

F4310E

Abstract: F4314E mitsubishi application mg series gaas
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G 4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

9834E

Abstract: 863A1 4a14c 3AA1 431A1
Contextual Info: 1 Datasheet CCCC9CF !C "#$C%EFC&'!CC 9C"'FC  A *8C 1 1 ●&'FC%!'C ●8!EC • ;B67!19CED1C914686818412. B1 ■A1 2. 1 6D9A1 C91 AEA38A51 'C81 8A1 )!1 9CED1 4/1 1

MGF4314E

Abstract: MGF4319E MGF4318E low noise x band hemt transistor MGF4310E gd 361 transistor gs 431 transistor mgf431 TRANSISTOR 132-gd
Contextual Info: bSLHaaT O G l T f l ? 1} S O I • MITSUBISHI SEMICONDUCTOR <GaAs FET> M 4310E Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 3 1 0E OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to