MGF1902B Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FE T DESCRIPTION T h e M G F 1 9 0 2 B is a lo w noise GaAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to X band am plifiers and oscillators. T he herm etically sealed m etalceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 9 0 2 B isa lo w noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed metalceramic package assures m inim um parasitic losses, and

MGF1302

Abstract: MGF1902 MGF1902B 902b fet MGF1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FE T DESCRIPTION T h e M G F 1 9 0 2 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttk y gate, w hich is designed fo r use in S to X band am plifiers and oscillators. T he h erm etically sealed m etalceram ic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

Contextual Info: MGF1902B Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)100m P(D) Max. (W)360m Maximum Operating Temp (øC)175 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

MGF1402

Abstract: MGF1302 MGF1302-15 MGF1902B-65 MGFC1402 mgf*1302-15 MGFC1402-T03 mgf1302 p
Contextual Info: Die_ MG FC 1402 A Package m it s u b is h i ¡¡J ^ ][0 2 ELECTRONIC DEVICE GROUP M G F1902B DESCRIPTIO N FEATURES Devices in this family are constructed using the MG FC 1402 die. These devices are N-channel Schottky gate type and are suitable for use in

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

MGF1802

Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Contextual Info: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a