MITSUBISHI
Abstract: MGF0907B Band Power GaAs FET s band
Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004
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June/2004
MGF0907B
MITSUBISHI
MGF0907B
Band Power GaAs FET
s band
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Untitled
Abstract: No abstract text available
Text: MGF0907B Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-15 I(D) Max. (A)6.0 P(D) Max. (W)38 Maximum Operating Temp (øC)175 I(DSS) Min. (A)4.0Â I(DSS) Max. (A)6.0 @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.
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MGF0907B
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MGF0907
Abstract: MGF0907b MGF0906B
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B － － Sample history:
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MGF0907B
17GHz
MGF0906B
MGF0907B
14GHz
25deg
MGF0907
MGF0906B
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mitsubishi *4a fet
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation High output power P1dB=40.0dBm(TYP.) @f=2.3GHz
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MGF0907B
MGF0907B,
mitsubishi *4a fet
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0907B L & S BAND / 10W non - matched DESCRIPTION The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation High output power P1dB=40.0dBm(TYP.) @f=2.3GHz
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MGF0907B
MGF0907B,
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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MGF0906A
Abstract: MGF0907A 0907b
Text: A MGF0906A MGF0907A Packaged m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION • The MGF0906A and MGF0907A GaAs FETs, with N-channel Schottky gates, are designed for use in UHF band amplifiers. High power added efficiency @ 2.3 GHz, PidB MGF0906A: riadd = 40% (TYP)
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MGF0906A
MGF0907A
MGF0906A:
MGF0907A:
MGF0907A
0907b
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GF212
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET w ith an N -channel sch o ttky U n ii: m illim e te rs gate, is designed fo r use in UHF band am plifiers. FEATURES • • Class A operation
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MGF0907B
GF-21
GF212
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTIO N The M G F 0 907B , GaAs FET w ith an N-channel schottky gate, is designed fo r use in UHF band amplifiers. FEATURES • • Class A operation High o u tp ut power • • High power gain
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MGF0907B
g-500
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U nit; n il lt r FEATURES • • Class A operation
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MGF0907B
GF-21
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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