MGF0909A Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING U nit:m illim eters The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power PidB=38dBm(TYP.)

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)

MGF0909A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN 4.4+0/-0.3

MGF0909A

Abstract: MGF0909a application
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3

MGF0909

Abstract: MGF0909a J10-0025
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGF0909A, GaAs FET with an N-channel schottky gate, is Unit:millimeters designed for use in UHF band amplifiers. FEATURES 1 • High output power P1dB=38dBm TYP.

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety