MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
June/2004
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MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
-45dBc
28dBm
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MGFC39V5964A
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
-45dBc
28dBm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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mgfc39v5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The MGFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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GFC39V5964
MGFC39V5964
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GFC39V5964
Abstract: mgfc39v5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> plan *oK p.oduc^ M GFC39V5964 S .9 —6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The MGFC39V5964 is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V5964
Item-01:
Item-51:
GFC39V5964
M5M27C102P,
RV-15
16-BIT)
GFC39V5964
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IM324
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39VS964A 5 .9 6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5 .9 —6.4 GHz band amplifiers. The hermetically sealed metal ceramic
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GFC39VS964A
MGFC39V5964A
Item-01:
IM324
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MGF4404A
Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D
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MGF2430
MGF2430A
MGF2445
MGF4301A
MGF4302A
MGF4303A
MGF4304A
MGFC36V6471
MGFC36V7177
MGFC36V7785
MGF4404A
MGF4403A
12GHz
MGF4402A
MGF4401A
MGFK25M4045
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mgfc30
Abstract: MGFC39V5964A
Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10
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MGFC36V3742
FC36V3742A
GFC36V4460
MGFC36V4460A
MGFC38VS258
MGFC36V6964
mgfc30
MGFC39V5964A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> I4;v ^ " M G FC 39V 5964A ,tu5* Ÿ ,r.>' " . . , 1 a '-'c . 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im ped an ce-m atched GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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I8155
Abstract: MGFC39V4450-51 MGFC39V7177-01
Text: ^M ITSUBISHI MGFC39VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC39VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50Q • High output power
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MGFC39VXXXX
MGFC39VXXXX
MGFC39V5258-01
MGFC39V5258-51
MGFC39V5964-01
MGFC39V5964-51
MGFC39V6471-01
MGFC39V6471-51
MGFC39V7177-01
MGFC39V7177-51
I8155
MGFC39V4450-51
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